• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.38-42
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• 2005

B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• 한국자기학회지
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• 제18권3호
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• pp.120-125
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• 2008

여러 가지 다른 조성의 NiCoZn ferrite를 공침법으로 제조한 후 소결온도를 변화시켜 NiCoZn ferrite 미분말을 제조하였다. 제조된 미분말의 미세조직, 결정구조 및 전기적 특성을 분석하였고, 복합형 NiCoZn ferrite 전파흡수체를 제작하여 전파흡수 특성을 분석하였다. 합성한 미분말들은 전형적인 NiCoZn spinel 구조를 지니고 있음을 확인하였고, 입자 크기가 평균 40 nm의 나노분말을 가짐을 알 수 있었다. NiCoZn ferrite를 소결온도를 달리하여 제조한 결과, $1250^{\circ}C$에서 소결된 NiCoZn ferrite가 불순물이 적고 초투자율 및 Q 값이 가장 낮게 나왔다. 또한 S-parameter를 측정하여 반사 감쇠율을 계산한 결과 두께 2 mm인 $(Ni_{0.4}Co_{0.1}Zn_{0.5})Fe_2O_4$ 조성의 시트형 전파흡수체는 6 GHz의 주파수 대역에서 -3.1 dB의 반사 감쇠율을 보여주었다. 이런 측정 결과 6 GHz 이상의 고주파 영역에서 복합 ferrite 전파흡수체로서 응용이 가능할 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.838-841
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• 2004

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.17-22
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• 2004

[ $CaZrO_3$ ]세라믹스에 대하여 $CaTiO_3$세라믹스의 첨가량 변동에 따른 마이크로파 유전특성을 조사하였다. 또한 중유전율 LTCC 기능성 기판으로 활용하기 위하여 저융점의 유리 프리트를 첨가하여 $CaZrO_3-CaTiO_3$ 세라믹스의 저온 소결 거동과 마이크로파 유전특성을 평가하였다. 저온 소결 조제로 사용된 저응점의 유리 프리트를 $10-20 wt\%$ 범위로 첨가함으로서 $CaZrO_3-CaTiO_3$ 세라믹스의 소결온도를 $1450^{\circ}C$에서 $900^{\circ}C$이하로 낮출 수 있었다. 음의 온도계수를 갖는 $CaZrO_3$ 및 유리프리트에 대하여 양의 온도계수를 갖는 $CaTiO_3$ 세라믹스의 분율을 적정히 제어함으로서 제로의 온도계수를 구현할 수 있었다. $CaZrO_3-CaTiO_3$ 세라믹스에 저온 소결용 유리 프리트를 $15 wt\%$ 첨가하여 $875^{\circ}C$에서 소결한 경우. 유전율(k) 23, 품질계수(Q${\times}$f) 2500, 공진 주파수 온도계수$(T_f) -3 ppm/^{\circ}C$의 매우 양호한 마이크로파 유전특성을 나타내었다.

• 한국세라믹학회지
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• 제39권9호
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• pp.890-895
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• 2002

$Mg_{0.93}Ca_{0.07}TiO_3(MCT)$와 $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3(CLST)$ 세라믹스를 적층형 경사기능재료 구조로 제조한 뒤 소결시간에 따른 마이크로파 유전특성의 변화를 고찰하였다. 소결시간의 변화에 대하여 유전상수는 거의 일정한 값을 유지하였으나, 품질계수는 밀도와 각 유전체 층에 인가되는 열응력의 변화에 의해 영향을 받았다. 적층형 시편의 밀도가 증가할수록, 각유전체 층에 작용하는 열응력이 감소함에 따라 전체 품질계수 값은 증가하였으며, CLST 보다 열팽창 계수가 작은 MCT층에 인가되는 압축응력의 변화에 대하여 품질계수 값은 민감하게 영향을 받았다. 1300$^{\circ}C$에서 9시간 소결한 적층형 경사기능재료 구조의 시편의 MCT층에 가장 큰 압축응력이 인가되었으며, 이 때 가장 낮은 품질계수를 나타냈다.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• 한국재료학회지
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• 제19권10호
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• 한국세라믹학회지
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• 제36권1호
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• pp.7-14
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• 1999

SHS 마이크로파를 이용하여 티타늄, 지르코니움과 보론분말을 혼합하여 TiZrB2 고용체를 합성된 분말의 분말특성과 소결체의 소결특성을 연구하였다. 합성 중 온도 profile 결과 연소온도와 연소속도는 Zr의 몰비가 증가함에 따라 증가 하였으며, Ti0.2Zr0.8B2조서에서 연소온도와 연소속도는 285$0^{\circ}C$, 14.6m/sec로 최고값을 얻었다. 190$0^{\circ}C$에서 30 MPa의 압력으로 60분간 고온가압소결한 TiZrB2고용체는 TiB2와 ZrB2로 상분리가 최고값을 얻었다. 190$0^{\circ}C$에서 30MPa의 압력으로 60분간 고압가압소결한 TiZrB2 고용체는 TiB2와 ZrB2로 상분리가 일어나 복합체가 형성되었으며, Ti0.8Zr0.2B2에서 가장 좋은 물성값을 나타내었는데 상대밀도, 꺽임강도, 파괴인성 및 경도는 각각 99%, 680MPa, 7.3MPam1/2, 2750Kg/$ extrm{mm}^2$이었다.

• 한국세라믹학회지
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• 제52권3호
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• pp.215-220
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• 2015

Phase evolution, microstructure, and microwave dielectric properties of $Li_2O$ and $Al_2O_3$ doped $Zn_{1.9}Si_{1.05}O_4$, i.e., $Zn_{1.9-2x}Li_xAl_x-Si_{1.05}O_4$, ceramics (x = 0.02 ~ 0.10) were investigated. The ceramics were densified by $SiO_2$-rich liquid phase composed of the Li-Al-Si-O system, indicating that doped Li and Al contributed to the formation of the liquid. As the secondary phase, ${\beta}$-spodumene solid solution with the composition of $LiAlSi_3O_8$ was precipitated from the liquid during the cooling process. The dense ceramics were obtained for the specimens of $$x{\geq_-}0.06$$ showing the rapid densification above $1000^{\circ}C$, implying that a certain amount of liquid is necessary to densify. The specimen of x = 0.06 sintered at $1050^{\circ}C$ exhibited good microwave dielectric properties; the dielectric constant and the quality factor ($Q{\times}f_0$) were 6.4 and 11,213 GHz, respectively.