• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.513-517
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• 1998

Fly ashes mixed with clay as 70:30 weight percent were sintered by microwave energy and a 2.45 Ghz kitchen model microwave oven was used. Samples were sintered at $1,150^{\circ}C$ and kept at that temperature up to 50 minutes by 10 minutes intervals. Microstructures were taken by Scanning Electron Microscope (SEM) and Energy Dispersive Spectrometry (EDS) analysis of a raw fly ash was taken. X-ray diffraction analysis was done, and compressive strengths and apparent densities were measured. Pore sizes of the samples became smaller as time passed by, but compressive strengths and apparent densities did not change much. Numerical analysis on the microwave heated system was carried out in order to figure out heat transfer phenomena in the cavity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.642-645
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• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.260-264
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• 1999

Effect of the particle size of $MgTiO_3$ and $CaTiO_3$ on the microstructural evolution during sintering of $0.93MgTiO_3-0.07CaTiO_3$ system was investigated. Microwave dielectric characteristics of the sintered ceramics were also measured. The microstructural evolutions were explained with an emphasis on the entrapping behavior of $CaTiO_3$ grain into the $MgTiO_3$ grain and were correlated with microwave dielectric characteristics. With an increasing particle size ratio between $CaTiO_3$and $MgTiO_3$, the fraction of entraped $CaTiO_3$ grains increased, which grain growth of $MgTiO_3$were concurrently accelerated due to decreasing drag force of its boundary migration. Besides, $CaTiO_3$-grain entrapment into the $MgTiO_3$grain interior led to decreaseing quality factor values.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.305-310
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• 2002

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$-Ba(Co$_{1}$3/Nb$_{2}$3/O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with the sintering temperature of 15$25^{\circ}C$~1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As increasing the mole fraction of BCN, dielectric constant increased while the temperature coefficient of resonant frequency was changed from positive to negative value. The highest value of quality factor, Q$\times$f$_{0}$=138,205GHz, obtained in the 0.9BMT-0.1BCN ceramics sintered at 1575$^{\circ}C$. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics sintered at 15$25^{\circ}C$ for 5 hours showed the microwave dielectric properties of $\varepsilon$$_{r}$=30.21, Q$\times$f$_{0}$=85,789GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.

• Journal of Ceramic Processing Research
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• v.23 no.1
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• pp.29-32
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• 2022

K(Ta_0.80Nb_0.20)O₃ films with Pb(Zr_0.52Ti_0.48)O₃PZT buffer layer on Pt/Ti/SiO₂/Si substrate were fabricated by sol-gel and spin-coating method. Structural and electrical properties were measured with variation of the sintering temperature, and the applicability to microwave materials was investigated. All K(Ta_0.80Nb_0.20)O₃ films showed a cubic crystal structure. Average grain size was about 123~193 nm and average thickness of the K(Ta_0.80Nb_0.20)O₃ films was approximately 366 nm. Through the AFM results, root mean square roughness (Rrms) of all K(Ta_0.80Nb_0.20)O₃ films was around 6 nm. All K(Ta_0.80Nb_0.20)O₃ films showed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability with an applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta_0.80Nb_0.20)O₃ film sintered at 700 ℃ showed good values of 22.1% at 10 V, -0.594/℃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.282-285
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• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

• ETRI Journal
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• v.18 no.1
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• pp.15-27
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• 1996

The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.485-492
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• 2000

The sintering characteristics and the effects of density on dielectric properties in 0.2Ba(Mg$_{1}$3(Nb$_{2}$3/)O$_3$-0.8Ba(Mg$_{1}$3//Ta$_{2}$3/)O$_3$ceramics were investigated. The samples were made by the powder mixing techniques with the two step calcining conditions. When the 1st and the 2nd calcining temperatures were 120$0^{\circ}C$ and the sintering temperature was 155$0^{\circ}C$the density of samples showed the highest value (7.45 g/cm$^3$, 98.5% of theoretical density) among them. The dielectric constant of samples was nearly independent of density but the tan $\delta$ and the temperature coefficient of dielectric constant decreased linearly with increasing of the density. The quality factor(Q$\times$f), the temperature coefficient of resonance frequency and the dielectric constant of Ba[Mg$_{1}$3(Nb$_{0.2}$/Ta$_{0.8}$)sub 2/3/]O$_3$ceramic were 79,548 GHz, +1.5 ppm/$^{\circ}C$ and 26 in the microwave range, respectively.ely.