• Title/Summary/Keyword: microwave sintering

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Structural and Microwave Dielectric Properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) Ceramics with Sintering Temperature (소결온도에 따른 $Ba_5B_4O_{15}$ (B=Ta, Nb)세라믹스의 구조 및 마이크로파 유전특성)

  • Lee, Sung-Jun;Kim, Jae-Sik;Ryu, Ki-Won;Lee, Young-Hie
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.7
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    • pp.1208-1212
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    • 2008
  • In this study, both structural and microwave dielectric properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All samples of the $Ba_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor of the $Ba_5Ta_4O_{15}$ ceramics was increased in as the sintering temperature increases from $1375^{\circ}C{\sim}1475^{\circ}C$ but decreased at the temperatures above $1475^{\circ}C$. And the bulk density, dielectric constant and quality factor of the $Ba_5Nb_4O_{15}$ ceramics were increased in as the sintering temperature increases from $1325^{\circ}CP{\sim}1400^{\circ}C$ but decreased at the temperatures above $1400^{\circ}C$. In the case of the $Ba_5Ta_4O_{15}$ sintered at $1475^{\circ}C$ and $Ba_5Nb_4O_{15}$ ceramics sintered at $1400^{\circ}C$, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, -3.06 $ppm/^{\circ}C$ and 39.55, 28,052 GHz, +5.7 ppm/$^{\circ}C$, respectively.

The Microwave Dielectric Properties of $ZnNb_2O_{6}$ Ceramics with Sintering Temperature and CuO Addition (소결온도와 CuO 첨가에 따른 $ZnNb_2O_{6}$ 세라믹스의 마이크로파 유전특성)

  • 김정훈;김지헌;배선기;이성갑;이영희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.7
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    • pp.347-351
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    • 2004
  • The $ZnNb_2O_{6}$ ceramics with CuO(1, 3, 5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C$$1075^{\circ}C$ for 3hr in air The structural properties and the microwave dielectric properties of $ZnNb_2O_{6}$ ceramics were investigated with sintering temperature and the addition of CuO. Increasing the addition of CuO, the peak of second phase($Cu_3Nb_2O_{8}$) was increased. The grain size of the $ZnNb_2O_{6}$ ceramics with CuO was increased with CuO addition at same temperature. The dielectric constant of $ZnNb_2O_{6}$ ceramics with CuO was increased with sintering temperature and CuO addition. While the quality factor of the $ZnNb_2O_{6}$ ceramics with lwt% CuO depended on sinterability, the quality factor of $ZnNb_2O_{6}$ with 3wt% and 5wt% CuO depended on second Phase due to the CuO addition. The optimum dielectric Properties of $\varepsilon$$_{r}$ = 21.73 Q${\times}$f = 19,276 were obtained from the condition of 3wt% CuO addition and sintering temperature of $1025^{\circ}C$(3hr).

The Microwave Dielectric Properties of $ZnNb_2O_6$ Ceramics with CUO and $B_2O_3$ (CuO와 $B_2O_3$를 첨가한 $ZnNb_2O_6$ 세라믹스의 마이크로파 유전특성)

  • Kim, Jung-Hun;Kim, Ji-Heon;Park, In-Gil;Lee, Sang-Heon;Bae, Sun-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.320-321
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    • 2005
  • The $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C\sim1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor and temperature coefficient of the resonant frequency were 19.30, 14,662GHz, +4.1$8ppm/^{\circ}C$, respectively.

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Microwave Sintering of Graphene-Nanoplatelet-Reinforced Al2O3-based Composites

  • Ai, Yunlong;Liu, Ying;Zhang, Qiuyu;Gong, Yuxing;He, Wen;Zhang, Jianjun
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.556-561
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    • 2018
  • In this study, we performed a microwave sintering (MWS) of $Al_2O_3$ ceramic and $Al_2O_3$-based composites with nominal contents of graphene nanoplatelets (GPLs) of 0.2, 0.4, 0.6, and 0.8 vol%. The GPL dispersion in N-methyl pyrroleketone was optimized to deagglomerate the GPLs without damaging their structure. Dense composites were then obtained by MWS at $1500^{\circ}C$ for 30 min. The effects of different GPL contents on the phase compositions, microstructures, and mechanical properties of the composites were investigated. The microstructures of the composites became finer with the incorporation of the GPLs. The well-dispersed GPL fillers led to higher sintered densities in the composites. The optimal mechanical properties were achieved with 0.4 vol% GPLs. For this sample, the hardness, fracture toughness, and bending strength were $2000kgf/mm^2$, $6.19MPa{\cdot}m^{1/2}$, and 365.10 MPa, respectively. The addition of GPL could improve the microstructure of the $Al_2O_3$ ceramic and has potential to improve the fracture toughness of the ceramics.

Microwave Dielectric Properties of Low Temperature Fired (${Pb_{0.45}}{Ca_{0.55}}$) [(${Fe _{0.5}}{Nb_{0.5}}$)$_{0.9}{Sn_{0.1}}$]$O_3$Ceramics with Various Additives

  • Ha, Jong-Yoon;Park, Ji-Won;Yoon, Seok-Jin;Kim, Hyun-Jai;Yoon, Ki-Hyun
    • Journal of the Korean Ceramic Society
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    • v.38 no.7
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    • pp.597-601
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    • 2001
  • The effect of CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$) [(F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$(PCFNS) were investigated. The PCFNS ceramics were sintered at 11$65^{\circ}C$. To decrease the sintering temperature for using as a low-temperature co-firing ceramics (LTCC), CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$were added to the PCFNS. As the content of CuO increased, the sintered density and dielectric constant increased and the temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. When the CuO-B $i_2$ $O_3$were added, dielectric properties were $\varepsilon$$_{r}$ of 83, Q. $f_{0}$ of 6085 GHz, and $\tau$$_{f}$ of 8ppm/$^{\circ}C$ at a sintering temperature of 100$0^{\circ}C$. The relationship between the microstructure and properties of ceramics was studied by X-ray diffraction and scanning electron microscopy.icroscopy.y.icroscopy.y.

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The sintering properties and microwave dielectric characteristic of xCaTi $O_{3}$ - yMgTi $O_{3}$ - z(L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ (xCaTi $O_{3}$-yMgTi $O_{3}$-z(L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$의 소결특성과 마이크로파 유전특성)

  • Sim, Hwa-Sup;Kim, Duck-Whan;Lim, Sang-Kyu;An, Chul
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.383-386
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    • 1998
  • The microwave dielectric properties and sintering properties of the xCaTi $O_{3}$-yMgTi $O_{3}$-z(L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ systems were investigated for the development of microwave dielectric materials. Dielectric constants decreased with increasing the amounts of MgTi $O_{3}$ and increased with reducing the amounts of MgTi $O_{3}$ and increased with reducing (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic structures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ changed from positive to negative value with increasing MgTi $O_{3}$ or (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic strucstures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ =0ppm/.deg.C. these compmsitions exhibited the stable dielectric properties on the various sintering temperatures.res.

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Microwave Dielectric Properties of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ Ceramics with Sintering Temperature (소결온도에 따른 $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ 세라믹스의 마이크로파 유전 특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Lee, Moon-Kee;Bae, Sun-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.363-366
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    • 2004
  • The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional mixed oxide method and sintered at $1425^{\circ}C{\sim}1500^{\circ}C$. According to XRD Patterns, hexagonal $Mg_4Ta_2O_9$ phase and cubic $SrTiO_3$ Phase were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596GHz and $-3.14ppm/^{\circ}C$, respectively.

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Effect of $ZrO_2$Addition on the Microwave Dielectric Properties of BZN-SZN System Ceramics (BZN-SZN계 세라믹스의 마이크로파 유전 특성에 미치는 $ZrO_2$의 영향)

  • 윤석규;박우정;양우석;윤대호
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.1042-1045
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    • 2001
  • Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

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Microwave Dielectric Properties of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ Ceramics with Sintering Temperatuer (소결온도에 따른 $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ 세라믹스의 마이크로파 유전 특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Lee, Moon-Kee;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.659-662
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    • 2004
  • The microwave dielectric properties of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics prepared by conventional mixed oxide method and sintered at $1400^{\circ}C-1450^{\circ}C$. According to X-ray diffraction patterns of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ phase were showed. Porosity of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics were reduced with increasing sintering temperature, but the bulk density was increased. In the case of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics sintered at $1425^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF) were 13.69, 63,754GHz and -29.37 $ppm/^{\circ}C$, respectively.

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Microwave Dielectric Properties of the (1-x)Mg$TiO_3$-xSr$TiO_3$(x=0.02~0.08)Ceramics with Sintering Temperature (소결온도에 따른 (1-x)Mg$TiO_3$-xSr$TiO_3$(x=0.02~0.08)세라믹스의 마이크로파 유전특성)

  • Choi, Eui-Sun;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.1011-1016
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    • 2000
  • The (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~1375$^{\circ}C$ and 2hours. The structure and microwave dielectric properties were investigated with sintering temperature and composition ratio. From the X-ray diffraction patterns, the cubic SrTi $O_3$and hexagonal MgTi $O_3$structures were coexisted in the (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased and the temperature coefficient of resonant frequency($\tau$$_{f}$)was decreased with addition of SrTi $O_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to positive value with increasing SrTi $O_3$. In the case of 0.96MgTi $O_3$-0.04SrTi $O_3$ceramics sintered at 130$0^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.5, 5918(at 7.33GHz) and +10ppm/$^{\circ}C$, respectively.y.y.y.

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