• Journal of Biosystems Engineering
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• v.32 no.4
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• pp.237-246
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• 2007

In this study, the microwave free-space transmission technique was used to measure the dielectric property of powdered food at microwave frequencies. The sample holder was designed and fabricated to transmit the microwave signals ranging from 1 to 15GHz. From the microwave propagation theory the equation expressing the dielectric property of powdered food was derived and validated by standard dielectrics. The dielectric property of powdered food such as wheat flour, coffee powder and milk powder was measured and analyzed. In the uniform range of bulk density of material, the real parts of permittivity of the food samples increased with the increase of moisture content, bulk density and temperature of the samples. The propagation properties such as attenuation and phase shift increased linearly as the moisture density of the food samples increased. As a measuring frequency of the moisture content, the X-band was recommended.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1582-1585
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• 1988

A cavity perturbation technique is employed to determine the dielectric property of thin samples. Substrates in microwave integrated circuits are fabricated in sheet form and are expected to have a dielectric constant less than 10 and a dielectric loss better than 10**-3. This research aimed to determine both dielectric constant and dielectric loss with good accuracy. The tecynique makes use of thin circular disk samples placed in a right circular cylindrical cavity. The accuracy of measurements is within \ulcorner% for dielectric constnat and 3x10**-4 for dielectric loss.

• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.455-461
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• 2006

High temperature dielectric constants of the various ceramic materials have been measured using cavity perturbation method. The measurements were applied to refractory, traditional and fine ceramic powder compacts from room temperature to $1200^{\circ}C$. Calibration constant in the equation suggested by Hutcheon et al., was determined from the dielectric constants of reference specimen (teflon and alumina) at room temperature. From these results, informations on the refectory materials were obtained for the microwave kiln design and understanding of the microwave heating effects of ceramics have been improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.224-228
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• 1995

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15S $m_{2}$ $O_{3}$-0.7Ti $O_{2}$ ceramics were fabricated by the mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions. Increasing the sintering temperature from 1300 to 1375[.deg. C], the sintered density was increased from 5.44 to 5.63[g/c $m^{3$]. Increasing the sintering temperature, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was independent of sintering temperature. In the specimen sintered at 1375[.deg. C], dielectric constant, quality factor and temperature coefficient of resonant frequency were 80.79, 2784(at 3[GHz]), +11.07[ppm/.deg. C], respectively..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.749-751
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• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 1997.12a
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• pp.186-192
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• 1997

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.832-837
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• 2006

Antennas were fabricated by physical(adhesive) and chemical(deposition+plating) method on organic-inorganic composite material. And antennas were measured dielectric constant and gain. Dielectric constant of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness and number of conduction material composition. But antennas were fabricated by chemical method was reached to 90 % of dielectric material. Gain of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness. But they were unrelated with conduction material composition. The other side antennas were fabricated by chemical method excelled more 0.8 dBic than antennas were fabricated by physical method in gain of antenna. Finally, chemical method can expect excellent product process because it can produce smaller size, higher gain and elimination of many handworks.