• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.

• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.291-298
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• 2020

ZITO/Ag/ZITO multilayer transparent electrodes at room temperature on glass substrates were prepared using RF/DC magnetron sputtering. Transparent conductive films with a sheet resistance of 9.4 Ω/㎡ and a transmittance of 83.2% at 550 nm were obtained for the multilayer structure comprising ZITO/Ag/ZITO (100/8/42 nm). The sheet resistance and transmittance of ZITO/Ag/ZITO multilayer films meant that they would be highly applicable for use in polymer-dispersed liquid crystal (PDLC)-based smart windows due to the ability to effectively block infrared rays (heat rays) and thereby act as an energy-saving smart glass. Effects of the thickness of the PDLC layer and the intensity of ultraviolet light (UV) on electro-optical properties, photopolymerization kinetics, and morphologies of difunctional urethane acrylate-based PDLC systems were investigated using new transparent conducting electrodes. A PDLC cell photo-cured using UV at an intensity of 2.0 mW/c㎡ with a 15 ㎛-thick PDLC layer showed outstanding off-state opacity, good on-state transmittance, and favorable driving voltage. Also, the PDLC-based smart window optimized in this study formed liquid crystal droplets with a favorable microstructure, having an average size range of 2~5 ㎛ for scattering light efficiently, which could contribute to its superior final performance.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.242-250
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• 1996

The effects of annealing in magnetic field after deposition on electromagnetic properties of $Ni_{81}Fe_{19}$ thin($400\;{\AA}$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity of the films was decreased below $300^{\circ}C$ due to stress relief and recrystallization, while increased at $400^{\circ}C$ due to grain growth and increasing the surface roughness. And then, $4{\pi}M_{s}$, was almost independent of annealing temperatures. Increasing the annealing temperature. the electrical resistivity of films was decreased from $37\;{\mu}{\Omega}cm$ to $24\;{\mu}{\Omega}cm$, the magnetoresistance was nearly a constant of about $0.6\;{\mu}{\Omega}cm$, and the MR ratio was increased from 1.5 % to 3.1 %. Therefore, It was shown that increasing the magnetoresistive ratio was mainly affected by decreasing the electrical resistivity. Considering the practical application of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at $300^{\circ}C$ in 400 Oe unidirectional magnetic field.

• Membrane Journal
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• v.4 no.3
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• pp.152-162
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• 1994

The photodegradation efficiency of formic acid on $TiO_2$ photocatalytic membranes was investigated. A new titania membrane reactors for purification of water combining microfiltration with photocatalytic degradation of organic compounds were developed. Titania membrane tubes(average pore size of $0.2\mu m$) were prepared by the slip casting, and porous thin films of $TiO_2$ were formed on the tube surface by the sol-gel process to increase the surface area, and consequently to increase photodegradation efficiency of organic compounds. The UV light with the wavelength of 365 nm was used as a light source for photocatalytic reactions. The photodegradation efficiency of the organic compounds was strongly dependent on the flux of the solution, the microstructure of the membrane (sol pH), and the amount of $O_2$ supplied. The effects of the primary oxidant such as $H_2O_2$ and dopants such as $Nb_2O_5$ on the photodegradation efficiency were also investigated. The results showed that more than 80% of formic acid could be degraded using membrane coated with a $TiO_2$ sol of pH 1.45. The photodegradation efficiency could be improved by about 20% when adding $H_2O_2$ in feed solution or doping $TiO_2$ membranes with $Fe_2O_3$.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.2
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• pp.149-159
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• 2006

Statement of problem. Porcelain repair mainly involves replacement with composite resin, but the bond strength between composite resin and all-ceramic coping materials has not been studies extensively. Purpose. The objective of this study was to investigate the influence of composite resin and ceramic etching pattern on shear bond strength of Empress2 ceramic and observe the change of microstructure of ceramic according to etching methods. Material and methods. Eighty-five cylinder shape ceramic specimens (diameter 5mm, IPS Empress 2 core materials) embeded by acrylic resin were used for this study. The ceramic were specimens divided into sixteen experimental groups with 5 specimens in each group and were etched with phosphoric acid(37%, 65%) & hydrofluoric acid (4%, 9%) according to different etching times(30s, 60s, 120s 180s). All etched ceramic surfaces were examined morphologically using SEM(scanning electron microscopy). Etched surfaces of ceramic specimens were coated with silane (Monobond-S) & adhesive(Heliobond) and built up composite resin using Teflon mold. Accomplished specimens were tested under shear loading until fracture on universal testing machine at a crosshead speed 1mm/min; the maximum load at fracture(kg) was recorded. Shear bond strength data were analyzed with one way ANOVA and Duncan tests.(P<.05) Results. Maximum shear bond strength was $30.07{\pm}2.41(kg)$ when the ceramic was etched with 4% hydrofluoric acid at 120s. No significant difference was found between phosphoric etchant group and control group with respect to shear bond strength. Conclusion. Empress 2 ceramic surface was not etched by phosphoric acid, but etched by hydrofluoric acid.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.1
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• pp.63-71
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• 2019

Objective: The aim of the study was to investigate the effect of zinc-bearing palygorskite (Zn-Pal) on rumen fermentation by in vitro gas-production system. Methods: In trial, 90 incubators were evenly divided into five groups: control (0% Zn-Pal), treatment I (0.2% Zn-Pal), treatment II (0.4% Zn-Pal), treatment III (0.6% Zn-Pal), and treatment IV (0.8% Zn-Pal). The contents of zinc for treatments were 0, 49, 98, 147, 196 mg/kg, respectively. The main chemical composition and microstructure of Zn-Pal was investigated by X-ray diffraction. The physicochemical features were evaluated by Zeta potential analysis, cation-exchange capacity, ethylene blue absorption and specific surface area (the Brunauer-Emmett-Teller method). In vitro gas production (GP) was recorded at 3, 6, 9, 12, 18, 24, 36, 48, 60, and 72 h incubation. Incubation was stopped at 0, 6, 12, 24, 48, and 72 h and the inoculants were tested for pH, microbial protein yield (MCP), $NH_3-N$, volatile fatty acids (VFAs), lipopolysaccharide (LPS). Results: The results showed that the GP in the treatment groups was not significantly different from the control groups (p>0.05). Compared to the control group, pH was higher at 24 h, 48 h (p<0.05), and 72 h (p<0.01) (range 6 to 7). The concentration of $NH_3-N$ in the three treatment groups was higher than in the control group at 24 h (p<0.01), meanwhile, it was lower at 48 h and 72 h (p<0.01), except in the treatment IV. The concentration of MCP in treatment I group was higher than in the control at 48 h (p<0.01). Compared with control, the LPS concentration in treatment III became lower at 12 h (p<0.05). Total VFAs in treatments were higher than in the control at 24 h, 48 h (p<0.05). Conclusion: These results suggest that the addition of Zn-Pal can improve the rumen fermentation, especially when adding 0.2% Zn-Pal.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.13-19
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• 2021

This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.