• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.343-343
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• 2011

저온에서의 Thin Film Transistor (TFT) 혹은 Nonvolatile memory (NVM) 등의 MOS 구조 소자들의 높은 전기적 특성에 관한 연구들이 진행 되면서 mobility와 stability 그리고 구조화의 용이성에 대한 연구가 진행됨에 따라 amorphous silicon의 결정화를 통해 전기적 특성을 향상 시킨 Nanocrystalline silicon (nc-Si)/Microcrystalline silicon (${\mu}c$-Si)에 대한 연구가 관심을 받고 있다. 본 논문에서는 ${\leq}300^{\circ}C$에서 Inductively coupled plasma chemical vapor deposition를 이용한 TFT을 제작하였다. 가스비, 온도, 두께에 따른 결정화 정도를 Raman spectra를 통해 확인한 후 Bottom gate와 Top gate 구조의 TFT를 제작 하고 결정화에 따른 전기적 특성 향상과 그의 덧붙여 플라즈마 처리를 통한 특성 향상을 확인 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.498-503
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• 1995

The adsorption behaviors of two major components purified, endo Ⅱ and exo Ⅱ, from Trichoderma viride were investigated using microcrystalline cellulose with different specific surface area as substrates. Adsorption was found to apparently obey the Langmuir isotherm and the thermodynamic parameters, ΔH, ΔS, and ΔG, were calculated from adsorption equilibrium constant,K. The adsorption process was found to be endothermic and an adsorption entropy-controlled reaction. The amount of adsorption of cellulase components increased with specific surface area and decreased with temperature and varied with a change in composition of the cellulase components. The maximum synergistic degradation occurred at the specific weight ratio of the cellulase components at which the maximum affinity of cellulase components obtains. The adsorption entropy and enthalpy for respective enzyme system increased with specific surface area increase. The adsorption entropy was shown to have a larger value with enzyme mixture.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.331-331
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.94-94
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.22-22
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• 1997

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.42 no.4
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• pp.56-63
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• 2010

Microcrystalline cellulose (MCC) was prepared from Miscanthus in this study. Two pulping methods, soda pulping and alkaline sulfite pulping were applied as a pretreatment process. After pulping, two different bleaching processes such as $ClO_2$ treatment followed by $H_2O_2$ treatment and $O_3$ treatment followed by $H_2O_2$ treatment were carried out. Two concentration of $H_2SO_4$, 47% and 57% were applied to the purified Miscanthus cellulose as a acid hydrolysis process to make MCC. The crystallinity index and morphological properties of the produced MCC were evaluated with X-ray diffractometer and scanning electron microscopy. The MCC originated from the soda pulping sample showed the higher crystallinity index than that originated from the alkaline sulfite pulping sample. The two stages of treatmen twith $O_3$ and $H_2O_2$ resulted in the higher purified cellulose products.