• Radiation Oncology Journal
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• v.19 no.3
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• pp.275-286
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• 2001

Purpose : To setup procedures of quality assurance (OA) for implementing intensity modulated radiation therapy (IMRT) clinically, report OA procedures peformed for one patient with prostate cancer. Materials and methods : $P^3IMRT$ (ADAC) and linear accelerator (Siemens) with multileaf collimator are used to implement IMRT. At first, the positional accuracy, reproducibility of MLC, and leaf transmission factor were evaluated. RTP commissioning was peformed again to consider small field effect. After RTP recommissioning, a test plan of a C-shaped PTV was made using 9 intensity modulated beams, and the calculated isocenter dose was compared with the measured one in solid water phantom. As a patient-specific IMRT QA, one patient with prostate cancer was planned using 6 beams of total 74 segmented fields. The same beams were used to recalculate dose in a solid water phantom. Dose of these beams were measured with a 0.015 cc micro-ionization chamber, a diode detector, films, and an array detector and compared with calculated one. Results : The positioning accuracy of MLC was about 1 mm, and the reproducibility was around 0.5 mm. For leaf transmission factor for 10 MV photon beams, interleaf leakage was measured $1.9\%$ and midleaf leakage $0.9\%$ relative to $10\times\;cm^2$ open filed. Penumbra measured with film, diode detector, microionization chamber, and conventional 0.125 cc chamber showed that $80\~20\%$ penumbra width measured with a 0.125 cc chamber was 2 mm larger than that of film, which means a 0.125 cc ionization chamber was unacceptable for measuring small field such like 0.5 cm beamlet. After RTP recommissioning, the discrepancy between the measured and calculated dose profile for a small field of $1\times1\;cm^2$ size was less than $2\%$. The isocenter dose of the test plan of C-shaped PTV was measured two times with micro-ionization chamber in solid phantom showed that the errors upto $12\%$ for individual beam, but total dose delivered were agreed with the calculated within $2\%$. The transverse dose distribution measured with EC-L film was agreed with the calculated one in general. The isocenter dose for the patient measured in solid phantom was agreed within $1.5\%$. On-axis dose profiles of each individual beam at the position of the central leaf measured with film and array detector were found that at out-of-the-field region, the calculated dose underestimates about $2\%$, at inside-the-field the measured one was agreed within $3\%$, except some position. Conclusion : It is necessary more tight quality control of MLC for IMRT relative to conventional large field treatment and to develop QA procedures to check intensity pattern more efficiently. At the conclusion, we did setup an appropriate QA procedures for IMRT by a series of verifications including the measurement of absolute dose at the isocenter with a micro-ionization chamber, film dosimetry for verifying intensity pattern, and another measurement with an array detector for comparing off-axis dose profile.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.62-75
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• 2007

This paper describes a shaped-beam antenna for increasing the antenna gain of a radiating element. The proposed antenna structure is composed of an exciting element and a multi-layered disk array structure(MDAS). The stack micro-strip patch elements were used as the exciter for effectively radiating the electromagnetic power to the MDAS over the broadband, and finite metallic disk array elements - which give the role of a director for shaping the antenna beam with the high gain - were finitely and periodically layered onto it. The efficient power coupling between the exciter and the MDAS should be carried out in such a way that the proposed antenna has a high gain characteristic. The design parameters of the exciter and the MDAS should be optimized together to meet the required specifications to meet the required specifications. In this study, a shaped-beam antenna with high gain was optimally designed under the operating conditions with a linear polarization and the frequency band of $9.6{\sim}10.4\;GHz$. Two methods constructed using thin dielectric film and dielectric foam materials respectively were also proposed in order to implement the MBAS of the antenna. In particular, through the computer simulation process, the electrical performance variations of the antenna with the MDAS realized by the thin dielectric film materials were shown according to the number of disk array elements in the stack layer. Two kinds of antenna breadboard with the MDAS realized with the thin dielectric film and dielectric foam materials were fabricated, but experimentation was conducted only on the antenna breadboard(Type 1) with the MDAS realized with the thin dielectric film materials according to the number of disk array elements in the stack layer in order to compare it with the electrical performance variations obtained during the simulation. The measured antenna gain performance was found to be in good agreement with the simulated one, and showed the periodicity of the antenna gain variations according to the stack layer number of the disk array elements. The electrical performance of the Type 1 antenna was measured at the center frequency of 10 GHz. As the disk away elements became the ten stacks, a maximum antenna gain of 15.65 dBi was obtained, and the measured return loss was not less than 11.4 dB within the operating band. Therefore, a 5 dB gain improvement of the Type 1 antenna can be obtained by the MDAS that is excited by the stack microstrip patch elements. As the disk array elements became the twelve stacks, the antenna gain of the Type 1 was measured to be 1.35 dB more than the antenna gain of the Type 2 by the outer dielectric ring effect, and the 3 dB beam widths measured from the two antenna breadboards were about $28^{\circ}$ and $36^{\circ}$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• Korean Journal of Environmental Biology
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• v.22 no.3
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• pp.472-477
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• 2004

To study the radiation related gene expression in mutants of Bacillus lentimorbus WJ5 induced by gamm radiation, the simultaneous gene expression was analyzed by DNA micro array. We constructed DNA chips including two thousand randomly digested genome spots of B. lentimorbus WJ5 and compared its quantitative aspect with seven mutants induced by gamma radiation $(^{60}/Co)$. From the cluster analysis of gene expression pattern, totally 408 genes were expressed and 27 genes were significantly upregulated by the gamma radiation in all mutants. Especially, genes involved in repair (mutL, mutM), energy metabolism (acsA, sdhB, pgk, yhjB, citB), protease (npr), and reduction response to oxidative stress (HMM) were simultaneously upregulated. It seems that the induction of the direct and/or indirect repair related genes in mutants induced by gamma radiation could be remarkably different from the adaptive responses against acute exposure to radiation.

• Polymer(Korea)
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• v.26 no.5
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• pp.634-643
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• 2002

Ultrathin film of polyamic acid having benzene and sulfonyloxyimide moieties was prepared using the Langmuir-Blodgett (LB) technique, and then photosensitive polyimide LB film was obtained by the thermal treatment of precursor polyamic acid multilayers at 200$\^{C}$ for 1 hr. The polyamic acid was synthesized by condensation polymerization under THF and pyridine cosolvent. All monomers and polymers were identified through elemental analysis, FT-IR and $^1$H-NMR spectroscopic measurements. The microarray patterning of photosensitive polyimide LB film on a gold substrate was generated with a deep UV lithography technique. The well-characterized monolayer of cytochrome c was immobilized on the microarray patterns using two different self-assembly processes. Physical and electrochemical properties of the self-assembled cytochrome c monolayer were investigated based on cyclic voltammetry and atomic force microscopy (AFM). Also, its application in bioelectronic device was examined.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.