• 제목/요약/키워드: metallurgical technology

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Effects of Chemical Composition of Ca(OH)2 and Precursors on the Properties of Fast-Curing Geopolymers (Ca(OH)2와 전구체의 화학 조성이 고속경화 지오폴리머의 물성에 미치는 영향)

  • Ko, Hyunseok;Noh, Jung Young;Lim, Hyung Mi
    • Korean Journal of Materials Research
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    • v.29 no.11
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    • pp.690-696
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    • 2019
  • Geopolymer is an alumina silicate-based ceramic material that has good heat-resistance and fire-resistance; it can be cured at room temperature, and thus its manufacturing process is simple. Geopolymer can be used as a reinforcement or floor finish for high-speed curing applications. In this manuscript, we investigate a high-speed curing geopolymer achieved by adding calcium to augment the curing rate. Metakaolin is used as the main raw material, and aqueous solutions of KOH and $K_2SiO_3$ are used as the activators. As a result of optimizing the high bending strength as a target factor for geopolymers with $SiO_2/Al_2O_3$ ratio of 4.1 ~ 4.8, the optimum ranges of the active agent are found to be $0.1{\leq}K_2O/SiO_2{\leq}0.4$ and $10{\leq}H_2O/K_2O{\leq}32.5$, and the optimum range of the curing accelerator is found to be $$0.82{\leq_-}Ca(OH)_2/Al_2O_3{\leq_-}2.87$$. The maximum flexural strength is found to be 1.35 MPa at $Ca(OH)_2/Al_2O_3=2.82$, $K_2O/SiO_2=0.3$, and $H_2O/K_2O=11.3$. The physical and thermal properties are analyzed to validate the applicability of these materials as industrial insulating parts or repairing finishing materials in construction.

Bandgap Engineering in CZTSSe Thin Films via Controlling S/(S+Se) Ratio

  • Vijay C. Karade;Jun Sung Jang;Kuldeep Singh, Gour;Yeonwoo Park;Hyeonwook, Park;Jin Hyeok Kim;Jae Ho Yun
    • Current Photovoltaic Research
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    • v.11 no.3
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    • pp.67-74
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    • 2023
  • The earth-abundant element-based Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (Voc) and short circuit current density (Jsc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

Effects of Additional Elements of the Mechanical Properties of HSLA Cast Steels (HSLA 주강의 기계적 성질에 미치는 첨가원소의 영향)

  • Park, Jai-Hyun;Kim, In-Bae
    • Journal of Korea Foundry Society
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    • v.20 no.5
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    • pp.307-315
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    • 2000
  • The effects of additional elements on the mechanical properties of HSLA cast steels such as hardness, tensile strength and charily impact energy have been investigated. Test results showed the mechanical properties of HSLA cast steels were superior to those of C-Mn cast steels. In case of the HSLA cast steels, HSLA cast steels with all addition of Nb, V, and Ti had more excellent tensile strength than those with individual addition of Nb, V, or Ti. The tensile strengths of HSLA cast steels were increased as the Mo contents were increased from 0.25% to 0.5%. These are attributed to the solution hardening and the change of the precipitation kinetics of NbC due to increased Mo contents. The tensile strength of HSLA cast steel was remarkablely increased as the manganese contents were increased from 0.65% to 1.2% and 1.5%, respectively. However, the optimum composition of HSLA cast steels to obtain the best compromise between tensile strength and charily impact energy compared to C-Mn cast steel was the additions of0.1% C and 1.2% Mn.

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The Behavior of Chill Layers with Temperature Variation of Shot Sleeve in Aluminum Diecasting Process (알루미늄 다이캐스팅 공정에서 사출 슬리브 온도변화에 따른 파단칠층의 거동)

  • Park, Jin-Young;Kim, Eok-Soo;Park, Ik-Min
    • Journal of Korea Foundry Society
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    • v.25 no.4
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    • pp.168-172
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    • 2005
  • In this study, the effects of chill layers occurred in shot sleeve on the molten metal filling were analyzed through computer simulation and the behavior of chill layers with temperature variation of shot sleeve set from 200 to $280^{\circ}C$ was also investigated. The simulation results showed the chill layers set in the in-gates during the injection process change the main filling direction and cause turbulent flow pattern, resulting in porosities inside the castings. The amount of chill layers with the increasing temperature of shot sleeve was considerably reduced. And particularly, at the setting temperature of $280^{\circ}C$ by heat control unit, the big reduction in chill layers, excellent trimmed surface and the highest densification were achieved, suggesting that as the optimal sleeve condition in diecasting, especially for the highly complex parts like valve body.

Effects of $v_2O_5$ Addition on the Magnetic Properties of Mn-Zn Ferrites (Mn-Zn Ferrites 의 자기적 성질에 미치는 $V_2O_5$의 첨가효과)

  • Jo, Deok-Ho
    • Journal of the Korean Magnetics Society
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    • v.2 no.3
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    • pp.222-227
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    • 1992
  • The effects of $V_2O_5$ addition as an additive on the densification, the microstructure and the magnetic properties of Mn-Zn ferrites were studied. The maximum density was observed at 0.1 wt% $V_2O_5$ content and it was recognized that a small content of $V_2O_5$ prohibited the discontinuous grain growth. The initial permeability showed maximum at 0.1 wt% $V_2O_5$ content and the power loss minimum at 0.03 wt% $V_2O_5$ content. It was found that a small content of $V_2O_5$ went into solid solution in the Mn-Zn ferrites, but above that extent $V_2O_5$ formed a second phase to be segregated at the grain boundaries.

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Electrochemical Corrosion Properties of Amorphous Co-Nb-B Alloys Prepared by Melt-Spinning Method (액체급냉법에 의해 제조한 비정질 Co-Nb-B 합금의 전기화학적 부식 특성)

  • Kim, Eun-Sun;Kim, Hyun-Goo;Jang, HeeJin
    • Corrosion Science and Technology
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    • v.13 no.4
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    • pp.152-156
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    • 2014
  • This study was undertaken to examine the electrochemical corrosion properties of an $Co_{80}Nb_{10}B_{10}$ and $Co_{82}Nb_8B_{10}$ amorphous alloys prepared by melt-spinning method under various conditions. The potentiodynamic polarization responses at various levels of pH (pH 2, pH 7, pH 12) showed that the corrosion current rate of $Co_{80}Nb_{10}B_{10}$ alloy is lower than that of $Co_{82}Nb_8B_{10}$ alloy in all levels of pH, implying the general corrosion resistance of the alloy with higher Nb content is better than that with higher Co content. The pitting potential of $Co_{80}Nb_{10}B_{10}$ alloy was also better than that of $Co_{82}Nb_8B_{10}$, evidenced by the higher pitting potential. Nb is thought to be effective in increasing the protectiveness of the passive film and hence to improve the corrosion resistance of Co-Nb-B alloys.

Surface Modification of Conductive Oxide films and Polymer Materials Employing Atmospheric Cold Plasma Surface Modification of Conductive Oxide films and Polymer Materials Employing Atmospheric Cold Plasma (대기압 저온 플라스마를 이용한 산화막 및 고분자 재료의 표면개질)

  • Lee, Bong-Ju;Lee, Hyun-Kyu;Kim, Chang-Suk;Lee, Kyung-Sub;Kim, Hyung-Kon;Chang, Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05a
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    • pp.32-34
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    • 2001
  • we have quantitatively investigated the possibility of feeding oxygen radical in air environment. The oxygen radical generation from the plasma was verified and its efficiency was found to be dependent on the cathode material by the analysis with optical emission spectroscopy as well as by the quartz crystal micro-balance method.

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Effect of Strain Rate on Microstructure Formation Behaviors of AZ80 Magnesium Alloy During High-temperature Deformation (고온변형 중의 AZ80 마그네슘 합금의 미세조직 형성 거동에 미치는 변형속도의 영향)

  • Park, Minsoo;Kim, Kwonhoo
    • Journal of the Korean Society for Heat Treatment
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    • v.33 no.4
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    • pp.180-184
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    • 2020
  • The crystallographic texture plays an important role in both the plastic deformation and the macroscopic anisotropy of magnesium alloys. In previous study for AZ80 magnesium alloy, it was found that the main texture components of the textures vary with the deformation conditions at high temperatures. Also, the basal texture was formed at stress of more than 15-20 MPa and the non-basal texture was formed at stress of less than 15-20 MPa. Therefore, in this study, uniaxial compression deformation of AZ80 magnesium alloy was carried out at high temperature (stress of 15-20 MPa). The uniaxial compression deformation is performed at temperature of 723 K and strain rate 3.0 × 10-3s-1, with a strain range of between -0.4 and -1.3. Texture measurement was carried out on the compression planes by the Schulz reflection method using nickel filtered Cu Kα radiation. EBSD measurement was also conducted in order to observe spatial distribution of orientation. As a result of high temperature deformation, the main component of texture and its development vary depending on deformation condition of this study.

Relization of Low Temperature Oxide Using Porous Silicon (다공질 실리콘을 이용한 저온 산화막의제조)

  • Ryu, Chang-U;Sim, Jun-Hwan;Lee, Jeong-Hui;Lee, Jong-Hyeon;Bae, Yeong-Ho;Heo, Jeung-Su
    • Korean Journal of Materials Research
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    • v.6 no.5
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    • pp.489-493
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    • 1996
  • 다공질 실리콘층(Porous Silicon LayerLPSL)을 사용하여 저온 열산화 (50$0^{\circ}C$, 1시간)와 급속 열산화공정(rapid thermal oxidationLRTO)(115$0^{\circ}C$, 1분)을 통하여 저온 산화막을 제조하였다. 제조된 산화막의 특성을 IR흡수 스펙트럼, C-V 곡선, 절연파괴전압, 누설전류, 그리고 굴절률을 조사함으로써 알아보았다. 절연파괴전압은 2.7MV/cm, 누설전류는 0-50V 범위에서 100-500pA의 값을 보였다. 산화막의 굴절률은 1.49의 값으로서 열산화막의 굴절률에 근접한 값을 나타냈다. 이 결과로부터 다공질 실리콘층을 저온산화막으로 제조할 때, RTO공정이 산화막의 치밀화(densification)에 크게 기여함을 알 수 있었다.

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Strain conservation in implantation -doped GeSi layers on Si(100)

  • Im, S.;Nicolet, M.A.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.47-52
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    • 1997
  • Metastable pseudomorphic GeSi layers grown by vapor phase epitaxy on Si(100) substrates were implanted at room temperature. The implantations were performed with 90 KeV As ions to a dose of $1\times 10^{13}\;\textrm{cm}^2$ for $Ge_{0.08}Si_{0.92}$ layers and 709 keV $BF_2^+$ ions to a dose of $3\times 10^{13}\;\textrm{cm}^2$ for $Ge_{0.06}Si_{0.94}$layers. The samples were subsequently annealed for short 10-40 s durations in a lamp furnace with a nitrogen ambient or for a long 30 min period in a vacuum tube furnace. For $Ge_{0.08}Si_{0.92}$samples annealed for a 30 min-longt duration at $700^{\circ}C$ the dopant activation can only reach 50% without introducing significant strain relaxaion whereas samples annealed for short 40s periods (at $850^{\circ}C$) can achieve more than 90% activation without a loss of strain, For $Ge_{0.06}Si_{0.94}$samples annealed for either 40s or 30min at $800^{\circ}C$ full electrical activation of the boron is exhibited in the GeSi epilayer without losing their strain. However when annealed at $900^{\circ}C$ the strain in both implanted and unimplanted layers is partly relaxed after 30min whereas it is not visibly relaxed after 40s.

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