• Journal of Surface Science and Engineering
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• v.32 no.6
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• pp.709-716
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• 1999

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.

• Journal of Surface Science and Engineering
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• v.36 no.5
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• pp.386-392
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• 2003

The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.13-17
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• 2000

The electrical properties of polyimide for interlayer dielectric applications are investigated with ECR (Electron Cyclotron Resonance) etching process. ECR etching with $Cl_2$-based plasma, generally used for aluminum etching, results in an increase in the dielectric constant of polyimide, while $SF_{6}$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of the polyimide is significantly suppressed after plasma exposure. Combination of Al etching with $Cl_2$plasma and polyimide etching with $SF_{6}$ plasma is expected as a good tool for realizing the multilevel metallization structures.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.116-120
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• 2011

In this paper, we studied the optimization of the screen pringting method for crystalline silicon solar cell fabrication. The 156 * 156 mm2 p-type silicon wafers with $200{\mu}m$ thickness and $0.5-3{\Omega}cm$ resistivity were used after texturing, doping, and passivation. Screen printing method is a common way to make the c-Si solar cell with low-cost and high-efficiency. We studied the optimized condition for screen printing with crystalline silicon solar cell as changing the printing direction (finger line or bus bar), finger width, and mesh angle. As a result, the screen printing with finger line direction showed higher finger height and better conversion efficiency, compared with one with bus bar direction. The experiments with various finger widths and mesh angles were also carried out. The characteristics of solar cells was obtained by measuring light current-voltage, optical microscope and electroluminescence.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1216-1219
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• 1994

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.1
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• pp.77-84
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• 2010

Reduction of oxides has been investigated for the volume reduction and recycling of the spent oxide fuel from commercial nuclear power plants. Various oxide reduction methods were proposed and KAERI (Korea Atomic Energy Research Institute) is currently developing an electrochemical reduction process using a LiCl-$Li_2O$ molten salt as a reaction medium. The electrochemical reduction process, the front end of the pyroprocessing, can connect the PWR (Pressurized Water Reactor) oxide fuel cycle to a metal fuel cycle of the sodium cooled fast reactor. This paper summarizes KAERI efforts on the development, improvement, and scale-up of the oxide reduction process.

• Journal of the Microelectronics and Packaging Society
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• v.3 no.2
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• pp.39-50
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• 1996

본 연구에선 주어진 조성의 알루미나 green sheet에 대하여 텅스텐의 입경 및 산화 물의 조성을 변화시키므로써 수축률을 제어하여 camber를최소화하여 결합강도를 최대로 하 는 텅스텐 페스트조성을 찾아내는 것을 목적으로 하였다. 본 실험에서 사용한 텅스텐 분말 의 입경은 0.35$\mu$m, 0.6$\mu$m, 0.72$\mu$m, $1.5\mu$m, 1.9$\mu$m, 3.2$\mu$m이며 frit는 Al2O3, MgO, SiO2 와 Al2O3, CaO, SiO2를 사용하여 각각의 조성에 따라 함량을 변화시키며 실험하였다. 소성 은 154$0^{\circ}C$로 습윤 수소분위기에서 시행하였으며 사용된 알루미나 green sheet의 알루미나 중심 입경은 2.8$\mu$m이었다. 분석은 주사전자 현미경으로 미세구조를 관찰하였고 EPMA Line Profile로 원소 분석을 하였으며 잔류응력을 측정하기 위하여 XRD분석을 하였다. Frit 을 함유하지 않은 경우 텅스텐 분말의 입경이 1.9$\mu$mdlfEo 최대 접합 강도를 나타내었다. Frit을 함유한 경우 Mgo계 frit조성에서는 MgO/Al2O3/SiO3=1/1/1일 때 CaO계 frot 조성에 서는 CaO/Al2O3/SiO2=1/2/1일 때 최대 접합 강도를 나타내었다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때 CaO 계는 5wt%함유하였을 때 최대 접합강도를 나타내었 다. Frit 함량을 변화시킨 경우 MgO계는 10wt%함유하였을 때, CaOr계는 5wt%함유하였을 때 최대 접합강도를 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.88-93
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• 2004

We, for the first time, present novel test patterns and conclusive on-chip data indicating that the variation of coupling capacitance, ${\Delta}C_C$ by crosstalk can be larger than static coupling capacitance, $C_C$. The test chip is fabricated using a generic 150 nm CMOS technology with 7 level metallization. It is also shown that ${\Delta}C_C$ is strongly dependent on the phase of aggressive lines. For antiphase crosstalk ${\Delta}C_C$ is always larger than $C_C$ while for in-phase crosstalk $D_{\Delta}C_C$is smaller than $C_C$.