• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• Progress in Superconductivity
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• v.7 no.1
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• pp.92-96
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• 2005

YBCO thin films on metal substrates were prepared by the metal-organic deposition using trifluoroacetates (TFA-MOD). To compensate the loss of Ba element from the precursor films due to the reaction with $CeO_2$ cap layer, we have employed Ba-excessive precursor solutions of $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ ($0{\le}x{\le}0.1$). The precursor solutions were dip-coated on the metal substrates with $CeO_2$ cap layer, initially heated up to $400^{\circ}C$, and finally fired at the various high temperatures for 2 h in a reduced oxygen atmosphere. With this approach, YBCO films possessing critical temperature over 85 K could be successfully prepared on the metal substrates. The highest $T_{c,zero}$ value of 86 K was obtained from the Ba-excessive YBCO film of x=0.005 in $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ fired at $750^{\circ}C$ for 2 h. However, unexpected $T_c$ suppression even in Ba-excessive YBCO samples requires further identification.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.89-101
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• 2005

Among many material processing related issues for successful scaling down of devices for the next 10 years or so, the advanced gate stack and interconnect technology are two most critical research areas, which need technical innovation. The introduction of new metallic films and appropriate processing technologies are required more than ever. Especially, as the device downscaling continues well into sub 50 nm regime, the paradigm for metal nano film deposition technique research has been shifted to high conformality, low growth temperature, high quality with uniformity at large area wafers. Regarding these, ALD has sparked a lot of interests for a number of reasons. The process is intrinsically atomic in nature, resulting in the controlled deposition of films in sub-monolayer units with excellent conformality. In this paper, the overview on the current issues and the future trends in device processing technologies related to metal nano films as well as the R&D trends in these applications will be discussed. The focus will be on the applications for metal gate, capacitor electrode for DRAM, and diffusion barriers/seed layers for Cu interconnect technology.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.121-124
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• 1990

In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films. The LB device was a metal/LB films/metal sandwich structure, where metal is electrode. In our experiments, the temperature depend on the current at above $0^{\circ}C$. This phenomena show that the electrical conduction current is a schottky current inherent to LB ultra thin films.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.437-442
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• 1991

Temperature and atmosphere dependence of electrical conduction of the metal Cu, Ag, Au films, vaccum evaporated on glass, was investigated. The structural changes of the metal films were examined by SEM and high temperature XRD. The electrical resistance slightly increased with initial temperature increase up to the inflection point and decreased to minimum value, after this rapidly increased with further temperature increased below minimum. These phenomena were caused by the thermally induced film failure as a result of the mass transport. The temperature for the film failure increased in the order of O2, Air, Vacuum, N2, Ar in Cu, Ag films and Air, Vacuum, N2, Ar in Au film. The increase of resistance at the lower temperature range was attributed to the lattice distortion by disordered crystal structure, while the decreasing resistance was attributed to the removal of structural defects and film densification.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.503-510
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• 2006

The measurement of specific gases is based on the reversible conductivity change of sensing materials in semiconductor type gas sensors. For an application as gas sensors of high sensitivity, porous $SnO_2$ films have been fabricated by anodizing of pure Sn foil in oxalic acid and characteristics of anodic tin oxide films have been investigated. Pore diameter and distribution were dependent on process conditions such as electrolyte concentration, applied voltage, anodizing temperature, and time. Characteristics of anodic films were explained with current density-time curves.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.7-18
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• 2010

Ethylene-bridged silsesquioxane resins were synthesized from two monomers: 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane. The silsesquioxane thin films were spin-coated from the copolymerized resins on silicon wafer. Metal insulator metal (MIM), metal insulator semiconductor (MIS) devices were utilized to investigate the electrical properties of the copolymerized thin films. As the films were inserted as gate insulator in the OTFT devices, the field effect mobilitites were evaluated by employing Poly(3-hexylthiophene) (P3HT) as organic semiconductor, which shows that their dielectric properties and mobility values are dependent on the molecular structures and Si-OH concentration involving in the films.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.163-168
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• 2010

We here describe the laser-direct patterning of nanostructured metal thin films. This method involves light-matter interaction in which a pulsed laser beam impinging on the film generates a thermoelastic force that plays a role to detach the film from the substrate or underlying layers. A moderate cohesion of the nanostructured film enables localized desorption of the material upon irradiation by a spatiallymodulated laser beam, giving good fidelity with the transfered pattern. This photoresist-free process provides a simple high-resolution scheme for patterning metal thin films.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1532-1534
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• 2003

We attempted to fabricate a dendrimer Langmuir-Blodgett(LB) films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. In this study the samples for electrical measurement were fabricated to two types metal complexes with $Pt^{4+}$ ions by LB method. And we have investigated the surface activity at the air-water interface as well as the electrical properties for the monolayers of G4-48PyP dendrimer complex with metal ions($Pt^{4+}$ ions) by different method. In the surface pressure-area(${\pi}$-A) isotherms of the dendrimers, the stable condensed films formed at the air-water interface and the different method of metal complex showed the difference on molecular behavior. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage (I-V) characteristics of metal/dendrimer LB films/metal(MIM) structure. In conclusion, it is demonstrated that the metal ion around G4-48PyP dendrimer can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties.