• 전기화학회지
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• 제11권3호
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• pp.176-183
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• 2008

본 연구에서는 8족 금속 원소인 osmium을 중심금속으로 4가지의 착물을 합성하였다. 합성한 착물은 ${[Os(bpy)}_2{(ap-im)Cl]}^{+/2+}$, ${[Os(dme-bpy)}_2{(ap-im)Cl]}^{+/2+}$, ${[Os(dmo-bpy)}_2{(ap-im)Cl]}^{+/2+}$, ${[Os(dcl-bpy)}_2{(ap-im)Cl]}^{+/2+}$이다. 합성된 착물을 순환전압전류법을 포함한 다양한 전기화학분석방법을 이용하여 전기적 성질을 조사하여 작용기에 따른 전위의 변화를 다음의 전위구간에서 $E_p$:$-0.06\;V{\sim}0.313\;V$ vs. Ag/AgCl 확인하였다. 합성한 화합물을 전기적 흡착방법으로 고정된 금나노입자(gold nano-particles)를 전극 위에 자기조립방식으로 고정화를 시켰다. 당과 당 분해효소(Glucose Oxidase, GOx)에 의한 촉매반응의 전류를 확인하였고, glucose농도에 따른 변화하는 전류의 양도 확인하였다. 마지막으로 고정된 4가지의 osmium complex는 서로 다른 전위로 인하여 촉매전류의 양이 달라지는 것을 알 수 있었고, 이로 인해 redox complex의 전위가 촉매반응에 미치는 영향을 확인 할 수 있었다.

• 한국자기학회지
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• 제12권6호
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• pp.231-234
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• 2002

Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm) 구조와 Si/SiO$_2$/NOL(t nm)/Co(4.5nm)/Cu(1.95nm)/Co(2.5nm)/NiO(60nm)의 구조를 갖는 바닥층 스핀밸브와 꼭대기층 스핀밸브를 제작하고, NOL의 두께변화에 따른 비저항($\rho$) 값과 비저항의 변화량( $\rho$), 교환결합력(H$_{ex}$), 보자력(H$_{c}$)의 자기적 특성을 연구하였다 NOL로 NiO 03nm의 두께로 삽입한 결과, 최대 자기저항비(magnetoresistance ratio)는 바닥층 스핀밸브에서 12.51%의 얻었으며, 자기저항비의 향상률은 꼭대기층 스핀밸브에서 더 높은 결과를 얻었다. 또한, 두 형태 모두 비저항의 변화량($\rho$)은 거의 일정하였고, 비저항($\rho$)값은 감소하였다 이러한 결과는 NOL의 삽입하였을 때 NOL/강자성층(free ferromagnetic layer) 계면에서 유도 전자의 specular 산란 효과를 가져왔고, 이로 인하여 전자의 평균 자유이동경로(mean free path; MFP)가 확장되어 전류의 전도도를 증가시켰다 이러한 specular효과에 의해 비저항의 변화량은 일정하게 유지되는 동안에 비저항 값은 감소하게 되어 결과적으로 자기저항비의 향상을 가져왔다.

• 전기화학회지
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• 제11권2호
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• Journal of Korean Neurosurgical Society
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• 제46권1호
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• pp.5-10
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• 2009

Objective: The purpose of this study is to evaluate the effectiveness of unilateral decompression and pedicle screw fixation for the unilateral symptomatic foraminal stenosis. Methods: The study group comprises consecutive 16 patients who underwent unilateral decompression and bone cement augmented pedicle screw fixation from May 2003 to January 2006. The patients were evaluated by visual analog scale (VAS) for pain and the scoring system of the Japanese Orthopedic Association (JOA) for low back pain. The result of surgery was also evaluated with McNab's classification. Excellent or good outcome was considered as successful. The patients were followed at postoperative 1 month, 3 month, 6 month, and 1 year with standing AP and lateral films. Results: The average VAS and JOA score of the 16 patients were 7.8(range, 6-9) and 5.8(range, 3 - 10) before surgery and 2.2(range, 0 - 5)and 12.3(range, 9 - 15) at the time of last follow up. Both VAS and JOA score improved significantly after the surgery (p<0.05, t-test). All patients improved after the operation and no revision surgery was required. No metal failure or pseudoarthrosis was observed during the follow-up. The success rate was 87.5%. Conclusion: Our data suggest that unilateral decompression and pedicle screw fixation for the unilateral symptomatic foraminal stenosis is an effect method for obtaining satisfactory clinical outcome. Its possible advantage is shorter operation time and reduced surgical extent. We believe that the reduced stiffness of unilateral fixation was compensated by pedicle screw augmentation and interbody fusion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• 대한화학회지
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• 제63권6호
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• pp.440-445
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• 2019

본 연구는 자동차 폐리튬 이차전지의 모듈로부터 재생할 수 있는 자원을 효율적으로 회수하는 방법을 개발하는 것이다. 모듈의 셀은 구리 박막, 알루미늄 박막, 그리고 이들 사이는 폴리머 재질의 격막으로 이루어져 있다. 셀은 특별히 제작한 글러브 상자 안에서 그리고 여러 번의 단계를 거쳐 손상 없이 완전히 해체 하였다. 우선적으로 양극활물질은 400 ℃에서 열처리하여 알루미늄 박막으로부터 분리하였다. 그런 후 분리된 양극활물질은 잔류되어 있는 탄소 성분을 제거하기 위해 800 ℃에서의 소성 후에 최종적으로 높은 순도로 회수되었다. 본 연구 결과를 바탕으로 해서, 알루미늄 박막으로부터 양극활물질을 구성하고 있는 코발트(Co), 니켈(Ni), 망간(Mn), 리튬(Li)과 같은 희유금속들을 80% 이상 회수할 수 있었다.

• Korean Chemical Engineering Research
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• 제54권5호
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• pp.598-605
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• 2016

V-Cr-Y 합금은 높은 투과도와 선택도를 가진 수소 분리막 재료이다. V-Cr-Y 분리막의 투과속도를 증가시키기 위하여 sputtering을 이용한 V-Cr-Y 박막을 제조하고 그 특성을 연구하였다. V-Cr-Y 성분이 각각 89.8%, 10.0%, 0.2%인 타겟을 이용하여 실리콘웨이퍼 위에 박막을 증착시켰으며, EDS 분석을 통해 박막조성이 타겟조성과 일치함을 확인하였다. 스퍼터링 온도와 출력이 증가할수록 박막의 성장속도와 결정크기가 증가하였으며, 압력이 감소할수록 결정구조가 보다 미세하고 치밀해졌다. 최적 스퍼터링 조건은 교류 고주파(RF), 2mTorr, 300W, 상온이었으며, 이 조건으로 제조한 박막을 열처리 하여 수소분리에 적합한 박막을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.318.2-318.2
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• 2016

FeM2X4 spinel structures, where M is a transition metal and X is oxygen or sulfur, are candidate materials for spin filters, one of the key devices in spintronics. Both the Fe and M ions can occupy tetrahedral and octahedral sites; therefore, these types of compounds can display various physical and chemical properties [1]. On the other hand, the electronic and magnetic properties of these spinel structures could be modified via the control of cation distribution [2, 3]. Among the spinel oxides, iron manganese oxide is one of promising materials for applications. FeMn2O4 shows inverse spinel structure above 390 K and ferrimagnetic properties below the temperature [4]. In this work, we report on the structural and magnetic properties of epitaxial FeMn2O4 thin film on MgO(100) substrate. The reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) results indicated that films were epitaxially grown on MgO(100) without the impurity phases. The valance states of Fe and Mn in the FeMn2O4 film were carried out using x-ray photoelectron spectrometer (XPS). The magnetic properties were measured by vibrating sample magnetometer (VSM), indicating that the samples are ferromagnetic at room temperature. The structural detail and origin of magnetic ordering in FeMn2O4 will be discussed.