• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.61-65
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• 2010

Ultrathin atomic layer deposition (ALD) coatings were found to enhance the performance of lithium-ion batteries (LIBs). Previous studies have demonstrated that $LiCoO_2$ cathode powders coated with metal oxides with thicknesses of $\sim100-1000{\AA}$ grown using wet chemical techniques improved LIB performance. In this study, $LiCoO_2$ powders were coated with conformal $Al_2O_3$ ALD films with thicknesses of only $\sim3-4{\AA}$ established using 2 ALD cycles. The coated $LiCoO_2$ powders exhibited a capacity retention of 89% after 120 charge-discharge cycles in the 3.3~4.5 V (vs. $Li/Li^+$) range. In contrast, the bare $LiCoO_2$ powders displayed only a 45% capacity retention. This dramatic improvement may result from the ultrathin $Al_2O_3$ ALD film acting to minimize Co dissolution or to reduce surface electrolyte reactions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.390-390
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• 2010

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.855-858
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• 2011

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.21 no.1
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• pp.119-125
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• 1991

In the study of magnification of image in the focal trough of panoramic radiography, (Yoshida company Panoura - Eight - s), a series of 63 x-ray films were taken with the 8-19 metal pins placed in the holes of the plastic plate, measured and evaluated by 4 observes. The author analyzed the vertical and horizontal magnification rate in the corrected focal trough. Results were as follows: 1. For vertial measurements, magnification rates were minimum 10% maximum 36% and the magnification for image of medial side was larger than that of image of lateral side from image layer. 2. For horizontal measurements, magnification rates were minimum-14% maximum 46% and images of medial side from focal trough were magnified and images of lateral side from focal trough were retrenched. 3. When moved 10㎜ downward occlusal layer, interspace was somewhat narrow between the pins and upper sides of pins were horizontally magnified but images of the end parts of pins showed tapered form. 4. When moved 10㎜ downward from the occlusal layer, opposite images showed overlapping.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.1-166.1
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• 2014

We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.294-294
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• 2014

Developing magnetic thin films with desirable physical properties is a key step to promote research in spintronics. Organic-based magnetic material is a relatively new kind of materials which has magnetic properties in a molecular and microscopic level. These materials have been constructed by the coordination between 3d transition metal and organic materials producing long-range magnetic orders with a relatively high transition temperature. However, these materials were mostly synthesized as a form of powder, which is difficult to study for their physical properties as well as apply for electronic/spintronic devices. In this study, we have employed physical vapor deposition (PVD) to develop a new organic-based hybrid magnetic film that is achieved by the coordination of Fe and tetracyanoquinodimethane (TCNQ). The IR spectra of the grown film show modified CN vibration modes in TCNQ, which suggest a strong bonding between Fe and TCNQ. The thin film has both ferromagnetic and semiconducting behaviors, which is suitable for molecular spintronic applications. The high resolution photoemission (HRPES) spectra also show shift of 1s peak point of nitrogen and the carbon 1s peaks display traces of charge transfer from Fe to TCNQ as well as shake-up features, which suggest strong bonding and anti-bonding nature of coordination between Fe and TCNQ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.452-455
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• 2003

[ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.