• 제목/요약/키워드: metal films

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GZO/Metal/GZO 하이브리드 구조 투명 전도막의 전기적, 광학적 특성; Ag, Cu, Al, Zn 금속 삽입층의 효과 (Electrical and Optical Properties of Transparent Conducting Films having GZO/Metal/GZO Hybrid-structure; Effects of Metal Layer(Ag, Cu, Al, Zn))

  • 김현범;김동호;이건환;김광호
    • 한국표면공학회지
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    • 제43권3호
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    • pp.148-153
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    • 2010
  • Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

배향화된 금속기관에서 산화물막의 제조와 분석 (Fabrication and characterization of metal oxide films on textured metal substrates)

  • 최은철;홍인기;이창호;성태현;노광수
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.111-120
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    • 2000
  • Recently, metal oxide films such as MgO or ZrO$_2$ have been studied as buffer layers to fabricate the superconductor with preferred orientation and as diffusion barriers to prevent the reaction between superconductor and metal substrate. In this research, we focused fabrication and characterization of MgO and ZrO$_2$ films on textured metal substrates. We fabricated MgO and ZrO$_2$ films on the Ni metal sheets by sol-gel dipping method. The microstrcures of the films were investigated by SEM and AES analyses. The films were coated with different cycles and dryed at 400$^{\circ}$C and 500$^{\circ}$C . The final films were heat-treated at 700$^{\circ}$C, 800$^{\circ}$C, and 1000$^{\circ}$C, in air atmosphere. We investigated the alignment of MgO and ZrO$_2$ films on Ni metal sheets by XRD and pole figure. The grain growth of metal oxide films was improved by the increase of the drying temperature and annealing temperature. The grain growth was increased with the annealing temperature. The alignment of metal oxide films depended on the thickness.

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Design and Synthesis of Multi Functional Noble Metal Based Ternary Nitride Thin Film Resistors

  • Kwack, Won-Sub;Choi, Hyun-Jin;Lee, Woo-Jae;Jang, Seung-Il;Kwon, Se-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.93-93
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    • 2013
  • In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

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PECVD로 증착된 금속층을 포함하는 DLC 박막의 기계적 특성 분석 (An Analysis of Tribological Properties of Metal Interlayered DLC Films Prepared by PECVD Method)

  • 전영숙;최원석;홍병유
    • 한국전기전자재료학회논문지
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    • 제19권7호
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    • pp.631-635
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    • 2006
  • The properties of metal interlayered DLC films between the Si substrate and the DLC films were studied. DC magnetron sputtering method has been used to deposit intermediate layers of metals. And RF-PECVD method has been employed to synthesize DLC onto substrates of the silicon and metal layers. After we used metal Inter-layers, such as chromium, nickel, titanium and we studied tribological properties of the DLC films. The thickness of films were observed by field emission scanning electron microscope (FE-SEM). Also the surface morphology of the films were observed by an atomic force microscope (AFM). The crystallographic properties of the films were analyzed with X-ray diffraction (XRD), the friction coefficients were investigated by AFM in friction force microscope (FFM) mode. Tribological performances of the films were estimated by nano-indenter, stress tester measurement.

Metal-insulator Transition in Low Dimensional $La_{0.75}Sr_{0.25}VO_3$ Thin Films

  • Huynh, Sa Hoang;Dao, Tran M.;Mondal, Partha S.;Takamura, Y.;Arenholz, E.;Lee, Jai-Chan
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.19.1-19.1
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    • 2011
  • We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

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Preparation and Oxygen Binding Properties of Ultra-Thin Polymer Films Containing Cobalt(II) meso-Tetraphenylporphyrin via Plasma Polymerization

  • Choe, Youngson
    • Macromolecular Research
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    • 제10권5호
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    • pp.273-277
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    • 2002
  • Ultra-thin polymer films containing cobalt(II) meso-tetraphenylporphyrin(CoTPP) have been prepared by vacuum codeposition of the metal complex and trans-2-butene as an organic monomer using an inductively coupled RF glow discharge operating at 7-9 Watts. The polymer films were characterized by sorption measurements. Sorption data obtained for polymer films containing CoTPP indicate that the CoTPP molecules are capable of reversibly binding oxygen molecules. It was found that the adjacent CoTPP molecules in the aggregated metal complex phase could irreversibly share the oxygen molecules. A dispersion of the metal complex molecules in the polymer matrix was made to maintain the reversible reactivity of the metal complex molecules with oxygen in the polymer films via vacuum evaporation process. The Henry mode solubility constant, the Langmuir mode capacity constant, the amount of binding oxygen, and the dissociation equilibrium in the dual mode sorption theory were discussed.

포토리소그래피 공정으로 제작된 터치스크린패널용 금속메시 (Thin Metal Meshes for Touch Screen Panel Prepared by Photolithography)

  • 김서한;송풍근
    • 한국표면공학회지
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    • 제49권6호
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    • pp.575-579
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    • 2016
  • The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

금속피막에 의한 건축 마감 의장 기법 개발에 관한 연구 (Study on the Development of Finishing Design Methods for Building Structures Using the Metal Films)

  • 임지택;정화랑
    • 한국구조물진단유지관리공학회 논문집
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    • 제22권1호
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    • pp.183-189
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    • 2018
  • 본 연구에서는 용사기법에 의해 콘크리트 표면에 금속피막을 형성하는 새로운 마감 의장기법의 가능성을 검토하기 위하여, 콘크리트의 함수율 변화에 따른 금속피막의 부착성능에 대하여 실험적인 연구를 수행하였다. 그 결과, 선재의 색은 용사 후에도 변하지 않는 것을 알 있었고, 콘크리트 부착강도 기준인 2.5 MPa를 확보하기 위한 하지 콘크리트의 함수율을 10% 이하로 관리하면 금속피막의 부착강도눈 확보되는 것으로 판단된다. 또한, 콘크리트와 금속피막의 부착강도를 증진시키기 위해서는 표면강화제에 의한 콘크리트 표면강화와 함께 금속피막을 봉공처리제로 봉공하는 것이 매우 유효한 것을 알 수 있었다.

LB 초박막의 전기전도특성(I) (Characteristics of Electrical Conduction in LB Ultra Thin Films)

  • 이원재;최명규;권영수;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1990년도 추계학술대회 논문집
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    • pp.74-77
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    • 1990
  • In this paper, we study the electrical conduction mechanism in Langmuir-Boldgett(LB) ultra thin films. The LB device has a metal/Lb films/metal sandwich structure, where metal is electrode. In our experiments, the temperature does not depend on the current at below 0$^{\circ}C$. This phenomena show that the electrical conduction current is a tunnel current inherent to LB ultra thin films.

이미다졸-금속 이온 착체를 포함하는 고분자 LB막의 기체 투과성 (Gas Permeability of Polymeric LB Films Containing Imidazole-Metal Ion Complexes)

  • 김병주;이범종
    • 폴리머
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    • 제24권4호
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    • pp.453-458
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    • 2000
  • 이미다졸-금속 이온 구조를 갖는 고분자 Langmuir-Blodgett (LB)막과 이들의 캐스트막을 다공성막 필터 위에 제조하여 산소와 질소의 투과성을 비교 검토하였다. 양친성 고분자 폴리 (N-(2-(4-이미다졸일)에틸)말레이미드-alt-1-옥타데센) (IM-O)은 폴리 (무수말레산-alt-1-옥타데센)과 히스타민의 반응으로 합성되었다. IM-O 단분자층은 철(III) 이온을 갖는 하층액 위에서 매우 안정하였다. LB막의 분자 구조는 FT-IR을 통하여 결정하였으며, LB막내에 존재하는 금속 이온의 농도는 XPS 측정으로 분석하였다. LB막의 균일성과 안정성을 SEM 관찰을 통하여 간접적으로 평가하였다. 본 LB막과 캐스트막의 기체 선택성은 산소보다 질소가 약간 높게 나타났으며, 두 기체에 대하여 모두 고투과성을 나타냈다.

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