• Journal of the Korean Institute of Gas
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• v.11 no.1 s.34
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• pp.29-33
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• 2007

This study investigates the use of $TiO_{2},\;Pd,\;Pt$, and In which greatly improves a sensitivity to trimethylamine gas. The metal-$SnO_{2}$ thick films were prepared by screen-printing method onto $Al_{2}O_{3}$ substrates with platinum electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of detecting gas concentration. This was then used to detect trimethylamine, dimethylamine, and ammonia vapours within the concentration range of 100-1000ppm. The gas sensing properties of metal-$SnO_{2}$ mixed thick films depended on the content and variety of metal. It was found that sensitivity and selectivity of the films dopped with 1 wt% Pd and 10 wt% $TiO_{2}$ for trimethylamin gas showed the best result at $250^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.51-51
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• 2010

Recently just as in the automobile industry, shipbuilders also try to reduce material consumption and weight in order to keep operating costs as low as possible and improve the speed of production. Naturally industry is ever searching for welding techniques offering higher power, higher productivity and a better quality. Therefore it is important to have a details research based on the various welding process applied to steel and other materials, and to have the ability both to counsel interested companies and to evaluate the feasibility of implementation of this process. Submerged-arc welding (SAW) process is usually used about 20% of shipbuilding. Similar to gas metal arc welding(GMAW), SAW involves formation of an arc between a continuously-fed bare wire electrode and the work-piece. The process uses a flux to generate protective gases and slag, and to add alloying elements to the weld pool and a shielding gas is not required. Prior to welding, a thin layer of flux powder is placed on the work-piece surface. The arc moves along the joint line and as it does so, excess flux is recycled via a hopper. Remaining fused slag layers can be easily removed after welding. As the arc is completely covered by the flux layer, heat loss is extremely low. This produces a thermal efficiency as high as 60% (compared with 25% for manual metal arc). SAW process offers many advantages compared to conventional CO2 welding process. The main advantages of SAW are higher welding speed, facility of workers, less deformation and better than bead shape & strength of welded joint because there is no visible arc light, welding is spatter-free, fully-mechanized or automatic process, high travel speed, and depth of penetration and chemical composition of the deposited weld metal. However it is difficult to application of thin plate according to high heat input. So this paper has been focused on application of the field according to SAW process for thin plate in ship-structures. For this purpose, It has been decided to optimized welding condition by experiments, relationship between welding parameters and bead shapes, mechanical test such as tensile and bending. Also finite element(FE) based numerical comparison of thermal history and welding residual stress in A-grade 3.2 thickness steel of SAW been made in this study. From the result of this study, It makes substantial saving of time and manufacturing cost and raises the quality of product.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• Journal of Dental Rehabilitation and Applied Science
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• v.31 no.3
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• pp.212-220
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• 2015

Purpose: Candida albicans can cause mucosal disease in many vulnerable patients. Also they are associated with denture-related stomatitis. Electrolyzed water is generated by electric current passed via water using various metal electrodes and has antimicrobial activity. The aim of this study was to investigate antifungal activity of electrolyzed water on C. albicans biofilm. Materials and Methods: C. albicans was cultured by sabouraud dextrose broth and F-12 nutrient medium in aerobic and 5% $CO_2$ condition to form blastoconidia (yeast) and hyphae type, respectively. For formation of C. albicans biofilm, C. albicans was cultivated on rough surface 6-well plate by using F-12 nutrient medium in $CO_2$ incubator for 48 hr. After electrolyzing tap water using various metal electrodes, the blastoconidia and hyphal type of C. albicans were treated with electrolyzed water. C. albicans formed blastoconidia and hyphae type when they were cultured by sabouraud dextrose broth and F-12 nutrient medium, respectively. Results: The electrolyzed water using palladium electrode (EWP) exhibited antifungal effect on blastoconidia of C. albicans. Also, the EWP significantly has antifungal activity against C. albicans biofilm and hyphae. In the electrolyzed water using various metal electrodes, only the EWP have antifungal activity. Conclusion: The EWP may use a gargle solution and a soaking solution for prevention of oral candidiasis and denture-related stomatitis due to antifungal activity.

• Journal of IKEEE
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• v.26 no.4
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• pp.633-638
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• 2022

Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al₂O₃/HfO_x/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.

• The Journal of Korean Society for Radiation Therapy
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• v.27 no.2
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• pp.97-106
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• 2015

Purpose : This study evaluate the thermal changes caused by use of the chemoport for drug administration and blood sampling during radiofrequency hyperthermia. Materials and Methods : 20cm size of the electrode radio frequency hyperthermia (EHY-2000, Oncotherm KFT, Hungary) was used. The materials of the chemoport in our hospital from currently being used therapy are plastics, metal-containing epoxy and titanium that were made of the diameter 20 cm, height 20 cm insertion of the self-made cylindrical Agar phantom to measure the temperature. Thermoscope(TM-100, Oncotherm Kft, Hungary) and Sim4Life (Ver2.0, Zurich, Switzerland) was compared to the actual measured temperature. Each of the electrode measurement position is the central axis and the central axis side 1.5 cm, 0 cm(surface), 0.5 cm, 1.8 cm, 2.8 cm in depth was respectively measured. The measured temperature is $24.5{\sim}25.5^{\circ}C$, humidity is 30% ~ 32%. In five-minute intervals to measure the output power of 100W, 60 min. Results : In the electrode central axis 2.8 cm depth, the maximum temperature of the case with the unused of the chemoport, plastic, epoxy and titanium were respectively $39.51^{\circ}C$, $39.11^{\circ}C$, $38.81^{\circ}C$, $40.64^{\circ}C$, simulated experimental data were $42.20^{\circ}C$, $41.50^{\circ}C$, $40.70^{\circ}C$, $42.50^{\circ}C$. And in the central axis electrode side 1.5 cm depth 2.8 cm, mesured data were $39.37^{\circ}C$, $39.32^{\circ}C$, $39.20^{\circ}C$, $39.46^{\circ}C$, the simulated experimental data were $42.00^{\circ}C$, $41.80^{\circ}C$, $41.20^{\circ}C$, $42.30^{\circ}C$. Conclusion : The thermal variations were caused by radiofrequency electromagnetic field surrounding the chemoport showed lower than in the case of unused in non-conductive plastic material and epoxy material, the titanum chemoport that made of conductor materials showed a slight differences. This is due to the metal contents in the chemoport and the geometry of the chemoport. And because it uses a low radio frequency bandwidth of the used equipment. That is, although use of the chemoport in this study do not significantly affect the surrounding tissue. That is, because the thermal change is insignificant, it is suggested that the hazard of the chemoport used in this study doesn't need to be considered.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.52-57
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• 2010

Although chemical sedimentation and ion exchange are usually applied to the treatment of heavy metal ions and radioactive cations, they have some serious disadvantages like a great consumption of chemicals, the disposal of valuable metals, and the secondary pollution of soil by the solid-waste. The advanced countries recently have studied the electrochemical ion exchange, combined electrochemical reduction and ion exchange, for the development of the alternative technique. This study has been performed to investigate the optimum condition for the preparation of the nickel hexacyanoferrate (NiHCNFe) which is an electrochemical ion exchanger. NiHCNFe film was deposited on the surface of nickel plate by chemical method or electrochemical method. The morphology and composition of NiHCNFe were observed by SEM and EDS, respectively. The peak current density of NiHCNFe was measured from the cyclic voltammograms of the continuous oxidation-reduction reaction in a parallel plane ion exchange electrode reactor. It was found that the chemical preparation method was better than the electrochemical method. The concentrated NiHCNFe was apparently deposited on nickel plate when dipping in the preparing solution for 118 h, especially. It also had a best durable performance as an ion exchange electrode.