• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Journal of Welding and Joining
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• v.15 no.1
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• pp.109-115
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• 1997

The arc stability and the metal transfer mode of high deposition GMA welding were investigated using various compositions of shielding gas with two types of filler, ie solid wire and metal cored wire. As for a solid wire, the transfer mode changed from axial spray to rotational spray with increasing wire feed rate (welding current) and the transition current was different with the gas composition. The gas composition also affected the apparent stability of rotating arc. As for a metal cored wire, on the other hand, no transition occurred and thus spray transfer mode could be applied with the welding current over 500A (deposition rate over 300g/min). Looking for the development of high deposition GMA welding process, above results were discussed in two different ways, one is to elevate the transition current, the other is to stabilize the rotational transfer mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.107-110
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• 2002

The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.70-73
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• 2015

Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.432-434
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• 2009

Metal nano-wire arrays on Cu-coated seed layers were fabricated by aqueous solution method using sulfate bath at room temperature. The seed layers were coated on Anodic aluminum oxide (AAO) bottom substrates by electrochemical deposition technique, length and diameter of metal nano-wires were dominated by controlling the deposition parameters, such as deposition potential and time, electrolyte temperature. Anodic aluminum oxide (AAO) was used as a template to prepare highly ordered Ni, Fe, Co and Cu multilayer magnetic nano-wire arrays. This template was fabricated with two-step anodizing method, using dissimilar solutions for Al anodizing. The pore of anodic aluminum oxide templates were perfectly hexagonal arranged pore domains. The ordered Ni, Fe, Co and Cu systems nano-wire arrays were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Vibrating Sample Magnetometer (VSM). The ordered Ni, Fe, Co and Cu systems nano-wires had different preferred orientation. In addition, these nano-wires showed different magnetization properties under the electrodepositing conditions.

• Journal of Welding and Joining
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• v.20 no.3
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• pp.60-66
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• 2002

Almost every die fur automobiles must be corrected or remodeled for minor geometrical changes or for better hardness characteristics by arc welding process. Although many other kinds of arc welding processes have been automated with robots, this molten metal deposition process for die remodeling still depend entirely on experienced welders. In this study, the database for bead shapes with respect to welding parameters are constructed by experiments to automate the molten metal deposition by arc welding process. And the changes of welding parameters for inclined base metal are studied to consider the effect of die geometries fur the welding process.