• Title/Summary/Keyword: metal coating

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Synthesis of LiDAR-Detective Black Material via Recycling of Silicon Sludge Generated from Semiconductor Manufacturing Process and Its LiDAR Application (반도체 제조공정에서 발생하는 실리콘 슬러지를 재활용한 라이다 인지형 검은색 소재의 제조 및 응용)

  • Minki Sa;Jiwon Kim;Shin Hyuk Kim;Chang-Min Yoon
    • Journal of the Korea Organic Resources Recycling Association
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    • v.32 no.1
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    • pp.39-47
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    • 2024
  • In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO2) and subsequent chemical reduction to obtain SS-derived black TiO2 (SS/bTiO2) material. As-prepared SS/bTiO2 is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO2-based paint shows similar blackness (L*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO2-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO2 and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.

Proposals to Revise the Occupational Exposure Limits for Aluminum in Korea (국내 크롬 및 그 화합물의 노출실태 및 노출기준 개정 제안)

  • Seung Won Kim;Young Gyu Phee;Yong-Joon Baek;Taejin Chung;Jeong-Hee Han
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.34 no.2
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    • pp.166-178
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    • 2024
  • Objectives: The 12 occupational exposure limits(OELs) for chromium and its compounds in Korea were set by applying the American Conference of Governmental Industrial Hygienists (ACGIH) Threshold Limit Values (TLVs). However, this is significantly different from the TLVs after the existing TLVs were integrated and withdrawn in 2018, so it is necessary to review the revision. Methods: Various documents related to chromium OELs were reviewed, including the ACGIH TLV Documentations for chromium and its compounds. A field survey was conducted targeting workplaces handling chromium and its compounds. Based on this, a revised OELs were proposed and a socio-economic evaluation was conducted. Results: The OELs for chromium compounds in Korea was first enacted in 2002, and in 2007, the OELs for chromium (hexavalent) compounds (insoluble) was lowered from 0.05 mg/m3 to 0.01 mg/m3. In 2008, the OELs for strontium chromate was newly established as 0.0005 mg/m3, and in 2018, the OELs for calcium chromate was newly established as 0.001 mg/m3. Total chromium and hexavalent chromium were measured for each of 6 samples at 2 welding sites, 4 plating sites, and 2 spray coating sites. When omparing the average of the results measured by ICP, a total chromium analysis method, and the analysis results by IC, a hexavalent chromium analysis method, only workplace 4 was the same, and total chromium was evaluated more, and total chromium was evaluated at 0.0004 to 0.0027 mg/m3. And hexavalent chromium was evaluated as non-detection ~ 0.0014 mg/m3. Amendment ①: The exposure standard for hexavalent chromium is not divided into water soluble, insoluble, chromium ore processing, and other hexavalent chromium compounds, and is integrated into 0.01 mg/m3, which is the level of chromium (hexavalent) compound (insoluble)., OELs for chromium (metal) and chromium (trivalent) compounds are integrated into chromium (trivalent) compounds, and the exposure level is maintained. Amendment ②: As in the amendment ①, the OELs are integrated, but the level is lowered to 0.005 mg/m3, which is the OELs of OSHA, and there is a grace period of 4 years. Amendment ③: As in the amendment ①, the OELs are integrated, but the level is lowered to 0.0002 mg/m3, which is the exposure standard of ACGIH, and there is a grace period of 5 years. Conclusions: Amendment ①: The change in the OELs is insignificant, so the cost required is small, and the benefit/cost ratio is greater than 1, so there is no problem in applying the amendment. Amendment ②: In all scenarios except chromium 6(insoluble), the benefit/cost ratio is greater than 1, so it is thought that there will be no major problem in applying the amendment. Amendment ③: Since the benefit/cost ratio is less than 1 in all scenarios, it is thought that the total social benefit that can be obtained when applying the amendment is not large.

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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The Study on Preparation and Characterization of Yellow Ceramic Pigment (황색세라믹안료의 제조 및 특성연구)

  • Kwon, Myon-Joo;Ha, Jin-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.7
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    • pp.504-509
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    • 2018
  • The purpose of this study was to manufacture a high-performance titanium yellow pigment. Anatase type $TiO_2$ was the skeleton of the pigment and $Sb_2O_3$ is used as the color assistant for the coloring agent, $Cr_2O_3$. Mixed raw materials for the pigment were $TiO_2$(98%), $Sb_2O_3$(99.5%), and $Cr_2O_3$(99.5%). The raw materials were mixed by a dry process and crystallized by calcination at $1,000{\sim}1,200^{\circ}C$. The crystalline material was pulverized in a Jar Mill under $1{\mu}m$ by a wet process and dried for 12 hours at $100^{\circ}C$. The pigment was finally made by a fine grinding process. To determine the best temperature for calcination, 4 temperature sections ($1000^{\circ}C$, $1100^{\circ}C$, $1150^{\circ}C$, and $1200^{\circ}C$) were set up. The X-ray diffraction peak of the rutile crystalline structure was highest at $1,150^{\circ}C$. The yellow ceramic pigment, which has the rutile structure, was applied for coating materials. The synthesized pigments underwent a discoloration tests on the acid resistance, alkaline resistance, weather resistance and heat resistance. In addition, a detection test on harmful heavy metals ($Cr^{+6}$) was done. The resulting values (${\Delta}E$) of the weather resistance test (2000hr), acid resistance test, alkaline resistance test, and heat resistance test were 0.74, 0.16, 0.07 and 0.29. The resulting value for heavy metals testing was 34ppm.