• 대한치과보철학회지
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• 제43권1호
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• pp.78-94
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• 2005

Purpose. The purpose of this study was to compare the effects of various surface treatments by measuring resonance frequency and histomorphometric analyses. Material and methods. In 5 adult dogs, the mandibular premolar were extracted. Six months later, 30 screw titanium implants (Dentium Co., Seoul, Korea) 6mm in length and 3.4mm in diameter, were placed in the mandibles of 5 dogs. Implants were divided into five groups following to surface treatment methods ; Group 1 is machined controls, Group 2 is sandblasted with large grit and acid-etched (SLA), Group 3 is anodized (Autoelectric Co., Korea, 660Hz, Duty10), Group 4 is hydroxyapatite(HA) coated by ion beam assisted deposition(E-beam), Group 5 is hydroxyapatite(HA) coated with Sol-gel coating process. Resonance frequency was measured implant placement immediately, and 3, 6 weeks and 10 weeks of healing perods. With the animal subject's sacrifice 10 weeks after implantation, implants were removed on bloc and histologic and computer-based histomorphometric analyses were performed. Histomorphometric analysis involved quantification of the entire bone to metal contact around the implants. Statistical analyses were performed using the SPSS for Windows (ver. 9.0 SPSS Inc.) Statistical differences were considered significant at P<0.05. Results. The results were as follows : 1) In five groups, mean value of resonance frequency analysis(RFA) were highest in group 5 (Sol-gel implant) at implantation and those of group 4 (E-beam)was highest at 10 weeks . but there was no correlation between surface treatments and RFA. 2) In all surface treatment groups, the RFA values of implants decreased until 3 weeks and increased to 10 weeks. 3) The percentage of direct bone-to-implant contact (BIC) had statistical significance between five groups in cancellous bone, (P<0.05) the percentage of bone density inside the thread had no statistical significance between five groups. (P>0.05) 4) There was a significant difference between cortical bone and cancellous bone in BIC. (P<0.05) and bone density. (P<0.05) 5) There was a correlation between the RFA value of implants at 10 weeks and BIC in cancellous bone, and between the RFA value of implants at 10 weeks and bone density in cortical bone. (P<0.05). Conclusions. These results indicate that surface treatment does not affect the implant stability in case of good bone quality.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.134-135
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• 2003

The dental implant materials required good mechanical properties, such as fatigue strength, combined with a high resistance to corrosion. For increasing fatigue resistance and delaying onset of stress corrosion cracking, shot peening has been used for > 50 years to extend service life of metal components. However, there is no information on the electrochemical behavior of shot peened and hydroxyapatite(HA) coated Ti-6Al-4V alloys. To increase fatigue strength, good corrosion resistance, and biocompatibility, the electrochemical characteristics of Ti/TiN/HA coated and shot peened Ti-6Al-4V alloys by electron beam physical vapor deposition(EB-PVD) have been researched by various electrochemical method in 0.9%NaCl. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. The produced materials were quenched at 1000$^{\circ}C$ under high purity dried Ar atmosphere and were hold at 500$^{\circ}C$ for 2 hrs to achieve the fatigue strength(1140㎫) of materials. Ti-6Al-4V alloys were prepared under the condition of hydrogen and vacuum arc furnace. Shot peening(SP) and sand blasting treatment was carried out for 1, 5, and 10min. On the surface of Ti-6Al-4V alloys using the steel balls of 0.5mm and alumina sand of 40$\mu\textrm{m}$ size. Ti/TiN/HA multilayer coatings were carried out by using electron-beam deposition method(EB-PVD) as shown Fig. 1. Bulk Ti, powder TiN and hydroxyapatite were used as the source of the deposition materials. Electrons were accelerated by high voltage of 4.2kV with 80 - 120mA on the deposition materials at 350$^{\circ}C$ in 2.0 X 10-6 torr vacuum. Ti/TiN/HA multilayer coated surfaces and layers were investigated by SEM and XRD. A saturated calomel electrode as a reference electrode, and high density carbon electrode as a counter electrode, were set according to ASTM GS-87. The potentials were controlled at a scan rate of 100 mV/min. by a potentiostat (EG&G Co.273A) connected to a computer system. Electrochemical tests were used to investigate the electrochemical characteristics of Ti/TiN/HA coated and shot peened materials in 0.9% NaCl solution at 36.5$^{\circ}C$. After each electrochemical measurement, the corrosion surface of each sample was investigated by SEM.

• 대한환경공학회지
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• 제38권6호
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• pp.291-298
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• 2016

불용성 전극은 전기화학 공정에 있어 가장 핵심적인 소재이며, 이를 이용한 전기화학적 수처리 공정은 난분해성 물질을 제거하는 유용한 방법으로서 이에 대한 연구가 지속적으로 이루어져 오고 있다. 전기화학적 수처리 공정은 주로 산화전극에서의 산화반응과 환원전극에서의 환원반응을 이용하는 것이다. 본 연구에서는 불용성 전극의 제조공정에서 전처리 방법이 전극의 수명에 미치는 영향을 평가하였다. 실험결과 촉매전극층을 코팅하는 물질계 및 코팅방법을 동일하게 하는 경우에도 기판의 전처리 방법 즉, 기판표면의 조도, 세정방법, 중간층 형성 여부 및 방법 등에 따라 전극의 수명이 크게 달라지는 것을 확인하였다. 실험은 가장 많이 사용되는 전극의 하나인 $IrO_2/Ti$ 전극을 대상으로 하였다. 샌드 블라스팅 공정의 경우 입도를 달리하는 샌딩 미디어를 이용하여 전극을 제조하고 이에 대한 수명을 평가한 결과 #80알루미나(입도 $212{\sim}180{\mu}m$)를 이용하는 경우가 가장 효과적인 것으로 나타났다. 기판에 대한 세정 공정은 arc plasma를 이용하는 것이 가장 우수하였으며, 중간층을 형성함에 있어서는 스퍼터링법을 이용하여 Ta 계열의 중간층을 형성하는 방법을 적용하는 것이 가장 바람직한 것으로 확인되었다.

• 한국화재소방학회논문지
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• 제32권6호
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• pp.1-6
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• 2018

본 논문은 배관용으로 사용되고 있는 황색절연링형(yellow insulation ring type) 금속플렉시블호스(CSST)를 인위적으로 열화(deterioration)시켜 소손되었을 때의 특성을 분석하는데 있다. 배관용 CSST는 튜브, 보호피막, 너트, 황색절연링, 패킹(packing), 이음쇠(socket)로 구성되어 있다. 그리고 튜브와 이음쇠 접속은 기밀성과 절연성능 향상을 위해 황색절연링과 고무 패킹을 사용한 것으로 판단된다. 실험에서 얻은 데이터를 95% 신뢰 구간에서 검증한 결과 AD (Anderson-Darling)는 0.945, P값은 0.015로 해석되었다. 배관용 CSST의 실험 데이터는 신뢰성이 있다는 것이 확인되었다. 가스 토치에 의해서 소손된 CSST의 산술적 평균 절연저항은 $16.7k{\Omega}$으로 가장 컸으며, 전기적인 소손을 입은 CSST는 상대적으로 가장 낮은 $208{\Omega}$, 정상 제품은 $1.72k{\Omega}$으로 분석되었다. 그러므로 화재 현장에서 수거한 CSST의 절연저항 값을 분석하면 소손 원인 판정에 활용할 수 있을 것이다. 또한, 대전류공급장치(PCITS)로 CSST에 최대 전류 97 A를 약 5 s 동안 흘린 결과 보호피막 및 절연링은 정상 제품과 차이가 없었으나 금속 튜브의 일부에서 용융이 형성된 것을 확인할 수 있었다.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.90-94
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• 2023

금속 발열체는 높은 열손실과 화재 위험성 등의 문제점이 있어 우수한 열전도도와 전기전도도 특성을 갖는 탄소섬유가 대체소재로 각광받고 있다. 그러나 탄소섬유는 약 200℃ 이상에서 산화하여 단선되기 때문에 발열체 적용이 제한적이며, 현재 진공관 형태로 탄소섬유 발열체가 일부 사용되고 있다. 본 연구에서는 진공관을 사용하지 않고 대기 중탄소섬유 산화방지를 위해 전기영동증착법으로 탄소섬유 표면에 내열성이 높은 폴리이미드를 코팅하였으며 인가전압에 따른 코팅 두께와 내열성을 확인하였다. 폴리이미드를 코팅한 탄소섬유 발열체를 직렬 연결하여 만든 히터는 최대 292℃ 까지 안정적인 발열 특성을 보였으며 이는 열전달 시뮬레이션의 발열온도 결과와 유사하였다. 전기영동증착방법으로 코팅한 폴리이미드 층은 200℃ 이상에서 탄소섬유의 산화방지에 효과적이며 발열 안정성을 요구하는 2차전지, 우주항공, 전기자동차 등 다양한 발열 부품에 적용 가능할 것으로 기대된다.

• 유기물자원화
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• 제32권1호
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• pp.39-47
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• 2024

본 연구에서는 반도체 제조공정에서 발생한 실리콘 슬러지(SS)를 재활용하여 라이다 센서에 인식 가능한 검은색 소재(SS/bTiO₂)로 제조하고, 두 종류의 라이다 센서(MEMS 및 Rotating LiDAR)를 활용하여 제조한 소재의 인식률을 확인하였다. 상세히는, SS 표면의 금속 불순물을 제거하여 이산화티타늄을 도입하고 화학적 환원을 통해 SS/bTiO₂ 소재를 제조하였다. SS/bTiO₂는 투명 페인트와 혼합하여 친수성 검은색 도료로 제조하고 스프레이 건을 사용하여 유리 기판에 도포하였다. SS/bTiO₂ 기반의 도료는 상용화된 카본 블랙 기반의 도료와 유사한 명도(L^*=15.7)를 가짐과 동시에 우수한 근적외선 반사율(26.5R%, 905nm)을 나타내었다. 더불어, MEMS 및 Rotating 라이다를 통해서도 성공적으로 인식이 되는 것을 확인하였다. 이는 프레넬 반사 원리에 의해 검은색 이산화티타늄과 실리콘 슬러지 간의 계면에서 높은 반사가 일어났기 때문이다. 본 연구를 통해, 반도체 제조공정에서 발생하는 실리콘 슬러지를 효과적으로 재활용할 수 있는 새로운 응용 방안에 대하여 제시하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국산학기술학회논문지
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• 제19권7호
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• pp.504-509
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• 2018

본 연구에서는 광범위로 사용되고 있는 황색안료 중에서 고기능성을 갖는 티탄옐로우 제조하고자 하였다. Anatase Type의 $TiO_2$를 골격제로 하고 발색제 산화물인 $Cr_2O_3$을 고용시키기 위하여 $Sb_2O_3$ 산화물을 발색보조제로 사용하였으며, 안료의 제조에 사용된 출발원료로는 $TiO_2$(98%), $Sb_2O_3$(99.5%), $Cr_2O_3$(99.5%)를 사용하였다. 출발원료를 건식으로 혼합하고, 고온($1,000{\sim}1,200^{\circ}C$)으로 소결하여 결정화하고 Jar Mill을 이용하여 $1{\mu}m$이하로 습식분쇄한 후에 건조온도 $100^{\circ}C$로 12시간 건조하고 믹서기로 미분쇄하여 안료를 제조하였다. 안료의 최적 소결온도를 선정하기 위하여 소결온도 $1000^{\circ}C$, $1100^{\circ}C$, $1150^{\circ}C$, $1200^{\circ}C$의 4구간을 설정하고, X선 회절분석을 통하여 결정상을 확인한결과 $1150^{\circ}C$에서의 결정구조 Peak가 가장 좋은 것을 확인할 수 있었다. 이렇게 제조된 Rutile구조를 갖는 황색세라믹안료를 컬러강판의 코팅재료로 적용하고자 하였다. 제조된 안료에 대하여 내후성, 내산성, 내알카리성, 내열성 시험을 하여 색상변화를 측정하였으며, 유해중금속($Cr^{+6}$)검출시험을하였다. 내후성(2000hr)시험결과의 색상변화(${\Delta}E$)는 0.74, 내산성, 내알카리성, 내열성시험의 색상변화(${\Delta}E$)는 각각 0.16, 0.07, 0.29로 거의 변색되지 않은 것을 알 수 있었으며, 유해중금속($Cr^{+6}$)검출시험결과는 34ppm이었다.