• Journal of Oriental Neuropsychiatry
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• v.10 no.1
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• pp.1-15
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• 1999

The effects of Sahyangsohapwon on the enhancement of learning and memory of AD model rats were studied with Morris water maze and radial arm maze. Sample group was electrolytically lesioned on nbM, and then daily treated with the medicine for two months. Control group with nbM lesion, and sham group with the sham operation were treated the vehicle for same duration. The following results were observed. In the learning trials of Morris water maze, all three groups were improved in learning capacity as trials were repeated, but the sham group showed more prominent improvement in learning compared with the control group(p<0.01). 2. In memory retention test of Morris water maze, the sham group marked more significant improvement statistically in memory retention compared with the control group(p<0.05). 3. In the learning of radial arm maze, the sham group shows better learning capacity significantly compared with the control group(p<0.05). With the experimental results above, Sahyangsohapwon can be supposed to have the improving effects on the learning and memory of AD rats induced by electronical injury of nbM.

• Journal of Physiology & Pathology in Korean Medicine
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• v.16 no.6
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• pp.1151-1156
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• 2002

This research was done to make the effective prescription and cope with various senile dementia. Sprague-Dawley rats were injured by ibotenic acid to make a damage on learning and memory functions of model rats. At first acquisition test and retention rest were done in the Morris water maze. And to evaluate the effects of the sample drug(GSD) on choline acetyltranferase and acetylcholine esterase, immunoreactive measurement and enzymatic activity measuring were carried out. The ibotenic acid were injected to hippocampus CA1 and CA3 area. Conclusion : GSD improved the learning ability in the acquisition test and memory function in the retention test significantly. And GSD increased the level of ChAT which is synthesizing acetylcholine in CA1 area, and at the same time it increased the level of AChE which is resolving acetylcholine. These results show that GSD improved the cholinergic catabolism and anabolism, and the increment of metabolic activity of cholinergic system. In other words, it contributes to the recovery of damaged learning and memory function by ibotenic acid. So it can be concluded that GSD will be helpful to cholinergic brain damage induced by primary or senile reduction of acetylcholine secretive activity.

• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.239-245
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• 2013

The data retention characteristics depending on neighbor cell's threshold voltage (Vt) in a multilevel NAND flash memory is studied. It is found that a Vt shift (${\Delta}Vt$) of the noted cell during a thermal retention test is increased as the number of erase-state (lowest Vt state) cells surrounding the noted cell increases. It is because a charge loss from a floating gate is originated from not only intrinsic mechanism but also lateral electric field between the neighboring cells. From the electric field simulation, we can find that the electric field is increased and it results in the increased charge loss as the device is scaled down.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.85-90
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• 2022

In this paper, an asynchronous nonvolatile memory module using a self-diagnosis function was designed. For the system to work, a lot of data must be input/output, and memory that can be stored is required. The volatile memory is fast, but data is erased without power, and the nonvolatile memory is slow, but data can be stored semi-permanently without power. The non-volatile static random-access memory is designed to solve these memory problems. However, the non-volatile static random-access memory is weak external noise or electrical shock, data can be some error. To solve these data errors, self-diagnosis algorithms were applied to non-volatile static random-access memory using error correction code, cyclic redundancy check 32 and data check sum to increase the reliability and accuracy of data retention. In addition, the possibility of application to an asynchronous non-volatile storage system requiring reliability was suggested.

• School Mathematics
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• v.6 no.4
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• pp.373-388
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• 2004

This paper is to develop teaching procedures of low achievers in mathematics by using mindmaps. For this, we firstly set the teaching process on basis of literature research. And then we choose four subjects who had serious problems of both memory and mathematics achievement. we also choose the several topics of geometry and measure which could be a big burden of memory as stuff for mindmap activities. The results led us to that using mindmap activities in learning and teaching mathematics could effect on that kind of students' mathematical achievement and mathematical attitude as well as retention of mathematical concepts. It implied that we could develop individual programs for students who have different problems in learning mathematics.

• The Journal of Pediatrics of Korean Medicine
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• v.18 no.1
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• pp.207-220
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• 2004

Objective: This study was conducted to find out the effect of saruktanggamibang(SRT) on memory and learning of rats. Methods: The mon·is water maze was used. It was performed Acquisition test, Retention test of water maze. After Behavioral test, it was investigated AChE cell numbers of CAI and CA3 on hippocampus. Results: of water maze revealed that acqusitive abilities of SAP+SRT group significantly improved on 3, 4, 5th day compared with SAP+Saline group. Retention test of water maze didn't reveal that retentive abilities of SAP+SRT group significantly improved comparing with another group. ChAT cell numbers of medial septum of SAP+SRT group significantly increased compared with SAP+Saline group. AChE cell numbers of CAl and CA3 on hippocampus of Sham+SRT group significantly increased compared with Sham group. And AChE cell numbers of CAl and CA3 on hippocampus of SAP+SRT group significantly increased compared with SAP+Saline group. Conclusion: Saruktanggamibang(SRT) has an effect on memory and learning of rats.

• Journal of Physiology & Pathology in Korean Medicine
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• v.17 no.1
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• pp.57-63
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• 2003

Background: Rehmanniae radix preparata is a medicinal herb widely used in Asian countries, to replenish Yin and Vital Essence through strengthen the kidney function. In Oriental Medicine the brain has physiological relationship with the Vital Essence. And central nerve system (CNS) is also refered to as 'Sea of the Vital Essence'. So if the Vital Essence is strong it will nourish the brain and memory will all be keen. The purpose of this study was to investigate the effect of 7 to 14 days treatment with Rehmanniae radix preparata (3.4 g /100 g, per os) on retention performance of rats in a passive avoidance situation. Methods: Male Sprague-Dawley rats were trained on a one-trial passive avoidance task using a two-way shuttle box by giving a foot shock. They were tested for retention of 6h, 24h, 72h, 168h, and 336h after training. Results: Rehmanniae radix preparata treated rats showed a increased performance in retention test as compared to saline at 6hr (P<0.05) and 24hr (P<0.05). Conclusion: These data suggest that Rehmanniae radix preparata treatment can improve memory in the rat.