• Journal of the Ergonomics Society of Korea
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• v.30 no.1
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• pp.221-227
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• 2011

Objective: The aim of this study is to investigate the quantitative effects of various emotions and retention periods on the color vividness of visual memory. Background: Although numerous studies have focused on the effects of emotions on memory such as visual detail and vividness of emotional events compared to neutral events, the relationship between emotion and visual memory is ambiguous yet. Furthermore, there were few studies on the effect of emotion on vividness of visual memory. Method: A total of 68 subjects were participated in serial experiments proceed on online and the experiments had two phases: recognition phase and reproduction phase. The 15 photographs were used as visual stimuli and all experiments were conducted over the internet(experiment website) and the results were collected on the web database. Results: The retention period, sleep-arousal emotion and subjective saturation of visual stimuli had a significant effect on the color vividness of visual memory. Conclusion: The results suggested that the color of visual stimulus might be more vividly remembered when it is arousing, the subjective saturation is higher and the retention period is longer. Application: The findings of this study may help clarify the relationship between human emotions and visual memory.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.143-151
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• 2010

In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.44-47
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• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• Journal of KIISE
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• v.42 no.8
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• pp.972-978
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• 2015

Non-volatile memory (NVM) supports both byte addressability and non-volatility. These characteristics make it feasible for NVM to be employed at any layer of the memory hierarchy such as cache, memory and disk. An interesting characteristic of NVM is that, even though it supports non-volatility, its retention capability is limited. Furthermore NVM has tradeoff between its retention capability and write latency. In this paper, we propose a novel NVM-based file cache management scheme that makes use of the limited retention capability to improve the cache performance. Experimental results with real-workloads show that our scheme can reduce access latency by up to 31% (24.4% average) compared with the conventional LRU based cache management scheme.

• School Mathematics
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• v.9 no.4
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• pp.507-521
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• 2007

The purpose of this study was to investigate the effects of memory retention of mathematical concepts in multiplication in the inquiry-based pantomime instructions. Three months later after the pre-test, a comparison was made between traditional class (TC) and class with the inquiry-based pantomime (IP) approach in terms of students retention of mathematical understandings. Results of the study indicated that the If instructions promoted effective long-term retention of knowledge. We concluded that instructional strategies that promoted active engagement in learning using life examples and drawings produced effective long-term retention of knowledge.

• 대한동의생리학회:학술대회논문집
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• 2005.02a
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• pp.27-27
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• 2005

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.3
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• pp.837-852
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• 2021

Recurrent neural network (RNN) architectures have been used for language modeling (LM) tasks that require learning long-range word or character sequences. However, the RNN architecture is still suffered from unstable gradients on long-range sequences. To address the issue of long-range sequences, an attention mechanism has been used, showing state-of-the-art (SOTA) performance in all LM tasks. A differentiable neural computer (DNC) is a deep learning architecture using an attention mechanism. The DNC architecture is a neural network augmented with a content-addressable external memory. However, in the write operation, some information unrelated to the input word remains in memory. Moreover, DNCs have been found to perform poorly with low numbers of weight parameters. Therefore, we propose a robust memory deallocation method using a limited retention vector. The limited retention vector determines whether the network increases or decreases its usage of information in external memory according to a threshold. We experimentally evaluate the robustness of a DNC implementing the proposed approach according to the size of the controller and external memory on the enwik8 LM task. When we decreased the number of weight parameters by 32.47%, the proposed DNC showed a low bits-per-character (BPC) degradation of 4.30%, demonstrating the effectiveness of our approach in language modeling tasks.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• Journal of the Korea Society of Computer and Information
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• v.12 no.4
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• pp.61-68
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• 2007

Two experiments examined the visual memory distortion by presenting 170 subjects with wide-angle views of four scenes on monitor screen. Retention interval of 0, 1 and 48 hours tested in reproduction and recognition experiment. The results of reproduction showed that the subjects tend to magnify the foreground and background of scenes compared to the real input (scene) for all retention intervals. The viewers recognized mure wide-angle views for the same scenes at the retention interval of 1 and 48 hours. These results demonstrated boundary extension is not a robust and unidirectional phenomenon but boundary contraction can be occurred with wide-angle views. The results also suggested that boundary contraction is the product of the activation of a memory schema hypothesis: In memory the representation moves toward a prototypical view and prototypical object size.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.183-186
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• 2015

This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.