• Proceedings of the Safety Management and Science Conference
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• 2007.11a
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• pp.323-328
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• 2007

This paper introduces radio frequency identification(RFID) information technologies for item management such as application interface of data protocol, data encoding rules and logical memory functions for data protocol, and, unique identification for RF tags. This study presents reference architecture and definition of parameters to be standardized, various parameters for air intreface communications, and, application requirements profiles.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.55-58
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• 2000

This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.122-127
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• 2012

A nano-electro-mechanical (NEM) memory simulator has been developed by using Matlab. The simulator can be used for the prediction of hysterisis curves, applied forces, steady- or transient-state behavior, program/erase energy consumption and potential energy. Predicting NEM memory behavior by simple user interface, the simulator will make the design of NEM memory cells simpler.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.46-49
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• 1994

In this paper we investigate the characteristics of switching and memory traps in sealed MONOS nonvolatile memory devices with different nitride thicknesses. We have demonttrated flatband voltage shift of 1V with 5V programming voltage. By fitting the experimental observations with theoretical calculations, trap density and capture cross section of memory trap at the nitride-blocking oxide interface are estimated to be 1.0${\times}$10$\^$13/ cm$\^$-2/ and 8.0${\times}$10$\^$14/ cm$\^$-2/

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.904-906
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• 2009

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.959-961
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• 2003

In this paper, we describe implemented DMAC (Direct Memory Access Controller) architecture on Altera's $Excalibur^{TM}$ that includes industry-standard $ARM922T^{TM}$ 32-bit RISC processor core operating at 200 MHz. We implemented DMAC based on AMBA (Advanced Micro-controller Bus Architecture) AHB (Advanced Micro-performance Bus) interface. Implemented DMAC has 8-channel and can extend supportable channel count according to user application. We used round-robin method for priority selection. Implemented DMAC supports data transfer between Memory-to-Memory, Memory-to-Peripheral and Peripheral-to-Memory. The max transfer count is 1024 per a time and it can support byte, half-word and word transfer according to AHB protocol (HSIZE signals). We implemented with VHDL and functional verification using $ModelSim^{TM}$. Then, we synthesized using $LeonardoSpectrum^{TM}$ with Altera $Excalibur^{TM}$ library. We did FPGA P&R and targeting using $Quartus^{TM}$. We can use implemented DMAC module at any system that needs high speed and broad bandwidth data transfers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.49-56
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• 2005

In this paper, we propose a memory BIST Circuit Creation System which creates BIST circuit based on user defined fault model and generates the optimized march test algorithm. Traditional tools have some limit that regenerates BIST circuit after changing the memory type or test algorithm. However, this proposed creation system can automatically generate memory BIST circuit which is suitable in the various memory type and apply algorithm which is required by user. And it gets more efficient through optimizing algorithms for fault models which is selected randomly according to proposed nile. In addition, it support various address width and data and consider interface of IEEE 1149.1 circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.54-57
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• 2002

In this study, a new programming method, to minimize the generation of Si-SiO$_2$ interface traps of scaled SONOS flash memory as a function of number of program/erase cycles has been proposed. In the proposed programming method, power supply voltage is applied to the gate, forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim (MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and drain are open. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ prograss/erase cycles can be realized by the proposed programming method. The asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics of scaled SONOS devices because electrical stress applied to the Si-SiO$_2$ interface is reduced by short programming time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.5-10
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• 2003

In this study, a new programming method to minimize the generation of Si-SiO$_2$interface traps of SONOS nonvolatile memory device as a function of number of porgram/erase cycles was proposed. In the proposed programming method, power supply voltage is applied to the gate. forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim(MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and dram are left open. Also, the asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics or SONOS devices because electrical stress applied to the Si-SiO$_2$interface is reduced due to short program time.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.