• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.12
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• pp.1554-1563
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• 1999

This paper presents the design of high speed processor for a sequence logic control using field programmable gate array(FPGA). The sequence logic controller is widely used for automating a variety of industrial plants. The FPGA designed by VHDL consists of program and data memory interface block, input and output block, instruction fetch and decoder block, register and ALU block, program counter block, debug control block respectively. Dedicated clock inputs in the FPGA were used for high speed execution, and also the program memory was separated from the data memory for high speed execution of the sequence instructions at 40 MHz clock. Therefore it was possible that sequence instructions could be operated at the same time during the instruction fetch cycle. In order to reduce the instruction decoding time and the interface time of the data memory interface, an instruction code size was implemented by 16 bits or 32 bits respectively. And the real time debug operation was implemented for easy debugging the designed processor. This FPGA was synthesized by pASIC 2 SpDE and Synplify-Lite synthesis tool of Quick Logic company. The final simulation for worst cases was successfully performed under a Verilog HDL simulation environment. And the FPGA programmed for an 84 pin PLCC package was applied to sequence control system with inputs and outputs of 256 points. The designed processor for the sequence logic was compared with the control system using the DSP(TM320C32-40MHz) and conventional PLC system. The designed processor for the sequence logic showed good performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• Journal of Broadcast Engineering
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• v.23 no.5
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• pp.606-613
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• 2018

This study is concerned with implementing an external memory expansion device for large-scale image processing. It consists of an external memory adapter card with a PCI(Peripheral Component Interconnect) Express Gen3 x8 interface mounted on a graphics workstation for image processing and an external memory board with external DDR(Dual Data Rate) memory. The connection between the memory adapter card and the external memory board is made through the optical interface. In order to access the external memory, both Programmable I/O and DMA(Direct Memory Access) methods can be used to efficiently transmit and receive image data. We implemented the result of this study using the boards equipped with Altera Stratix V FPGA(Field Programmable Gate Array) and 40G optical transceiver and the test result shows 1.6GB/s bandwidth performance.. It can handle one channel of 4K UHD(Ultra High Density) image. We will continue our study in the future for showing bandwidth of 3GB/s or more.

• KIISE Transactions on Computing Practices
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• v.23 no.2
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• pp.97-103
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• 2017

Many hardware-based regular expression matching architectures have been proposed for high-performance matching. In particular, regular expression processors, which perform pattern matching by treating the regular expressions as the instruction sequence like general purpose processors, have been proposed. After instruction sequence and data are provided in the instruction memory and data memory, respectively, a regular expression processor can perform pattern matching. To use a regular expression processor as a coprocessor, we need the host interface to transfer the instruction and data into the memory of a regular expression processor. In this paper, we design and implement the host interface between a host and a regular expression processor in the DE1-SoC board and the application program interface. We verify the operations of the host interface and a regular expression processor by executing the application programs which perform pattern matching using the application program interface.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.120-123
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• 2000

In this paper, A target architecture and interface synthesizer are proposed for processor-embedded codesign. The target architecture has the form of ARM processor based on AMBA. The interface synthesizer automatically generates an interface circuit for the communication between HW and SW. A memory map is used as the communication channel and an interrupt-based interface is applied for synchronized communication between HW and SW modules. In order to verify the function and performance of proposed target architecture and the interface synthesizer, practical test example is applied. Experimental results show the proposed interface synthesizer functioned correctly in the HW/SW codesign environment.

• The Journal of the Korea Contents Association
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• v.11 no.12
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• pp.597-610
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• 2011

In database application developments, data coexists in memory and disk spaces. To manipulate the memory data, the general programing languages are used and to manipulate the disk data, SQL is used. In particular, the procedural languages for the memory manipulation are difficult to create and manage than declarative languages such as SQL. Thus, this paper shows that a particular structure of memory data, tree structured, can be manipulated by SQL. Most of all, the model data of the user interfaces can be represented by a tree structure and thus, it can be processed by SQL except non set computations. The non set computations could be done by helper classes. The SQL memory data manipulation is more suited to the database application developments which have few complex computations.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.932-935
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• 2002

In this paper, we introduce new FTL(Flash Translation Layer) driver algorithm that tolerate the power off errors. FTL driver is the software that provide the block device interface to the upper layer software such as file systems or application programs that using the flash memory as a block device interfaced storage. Usually, the flash memory is used as the storage devices of the mobile system due to its low power consumption and small form factor. In mobile system, the state of the power supplement is not stable, because it using the small sized battery that has limited capacity. So, a sudden power off failure can be occurred when we read or write the data on the flash memory. During the write operation, power off failure may introduce the incomplete write operation. Incomplete write operation denotes the inconsistency of the data in flash memory. To provide the stable storage facility with flash memory in mobile system, FTL should provide the fault tolerance against the power off failure. SSR (Simple Sector Remapper) is a fault tolerant FTL driver that provides block device interface and also provides tolerance against power off errors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.981-984
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• 2005

This study is to realize its threshold voltage shift after programming operation in charge trap type SONOS memory by simulation. SONOS devices are charge trap type nonvolatile memory devices in which charge storage takes place in traps in the nitride-blocking oxide interface and the nitride layer. For simulation of their threshold voltage as a function of the memory states, traps in the nitride layer have to be defined. However, trap models in the nitride layer are not developed in commercial simulator. So, we propose a new method that can simulate their threshold voltage shift by an amount of charges induced to the electrodes as a function of a programming voltages and times as define two electrodes in the tunnel oxide-nitride interface and the nitride-blocking oxide interface of SONOS structures.

• Polymer Science and Technology
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• v.17 no.2
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• pp.182-190
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• 2006

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1057-1062
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• 2001

We investigated the change of mechanical properties for TiNi shape memory alloy by heat treatment. 6061Al matrix composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum casting. TiNi alloy has the maximum tensile strength at 673K treated and there is no change of tensile strength and hardness at 448K treated. The composites, prepared by vacuum casting, showed good interface bonding by vacuum casting. It was about 3$\mu\textrm{m}$ of thickness of the diffusion layer. Tensile strength of the composite was in higher than that of 6061Al alloy as increased value of about 70MPa at room temperature and about 110MPa at 363K. We thought that the increase of the tensile strength at 363K was due to reverse transformation of the TiNi shape memory alloy.