• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.3
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• pp.493-501
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• 2001

As a web technology is generalized, the IT environment has been changed into an e-business system. An e business system requires web interface technology that can be integrated in a database and be applied to a server-side programming. Traditionally, a CGI technology has been used a web interface. But the CGI technology has many difficulties in connection and delay in processing. So, it is necessary to introduce a new methods as ISAPI Extension and JDBC. These methods provide advantages as reduce of memory and fast process. This paper proposes a comparing study on the JDBC-ODBC Bridge and the ISAPI Extension method. It will suggest more efficient technology with these methods for a web interface development.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.18-21
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• 2003

The effect of interface bonding strength on the recovery force of SMA wire reinforced polymer matrix composites was investigated by pullout test. Firstly, the recovery forces and transformation temperatures of various prestrained SMA wires were measured and 5% prestrained SMA wires were prepared for the reinforcements of composites. EPDM incorporated with 20vol% silicon carbide particles(SiCp) of 6, 12, $60{mutextrm{m}}$ size were used as matrix. Pullout test results showed that the interface bonding strength increased when the SiCp size decreased due to the increase of elastic modulus of matrix. Cyclic test of composites was performed through control of DC current at the constant displacement mode. The abrupt decrease of recovery force during cycle test at high current was occurred by thermal degradation of matrix. This was in good agreement with temperature related in the thermal degradation of matrix. The hysteresis of recovery force with respect to the temperature was compared between wire and composite and the hysterisis of composites was smaller than the wire due to less thermal conduction.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.1 no.1
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• pp.1-6
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• 2007

Applying the gyroscopic technology, HeadZmouse has been developed to simulate left and right mouse click, double click, drag and drop, and even a wheel function for navigating web. This device was designed to work on both PC and Macintosh environments using a USB cable. The first time you use this device, you'll find out how much freedom it offers to someone who can't use his or her hands freely. Rather than being tied to your computer, simple manipulation such as blowing an air (breathing) into a sonic sensor can simulate all the functions which standard mouse has, even including a wheel function. Also, a macro-interface device has been developed. By storing repetitive tasks into a memory, you can carry out repetitive tasks just by clicking a button once.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.82-85
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• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Journal of Information Processing Systems
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• v.4 no.4
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• pp.133-144
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• 2008

Clusters have become a popular alternative for building high-performance parallel computing systems. Today's high-performance system area network (SAN) protocols such as VIA and IBA significantly reduce user-to-user communication latency by implementing protocol stacks outside of operating system kernel. However, emerging parallel applications require a significant improvement in communication latency. Since the time required for transferring data between host memory and network interface (NI) make up a large portion of overall communication latency, the reduction of data transfer time is crucial for achieving low-latency communication. In this paper, Eager Data Transfer (EDT) mechanism is proposed to reduce the time for data transfers between the host and network interface. The EDT employs cache coherence interface hardware to directly transfer data between the host and NI. An EDT-based network interface was modeled and simulated on the Linux-based, complete system simulation environment, Linux/SimOS. Our simulation results show that the EDT approach significantly reduces the data transfer time compared to DMA-based approaches. The EDTbased NI attains 17% to 38% reduction in user-to-user message time compared to the cache-coherent DMA-based NIs for a range of message sizes (64 bytes${\sim}$4 Kbytes) in a SAN environment.

• Proceedings of the Korea Information Processing Society Conference
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• 2004.05a
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• pp.157-160
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• 2004

본 논문은 미국 차세대 디지털 케이블 방송 표준 규격인 오픈케이블($OpenCable^{TM}$)의 수신제한 모듈인 CableCard의 Physical Layer를 SystemC의 TLM(Transaction Level Modeling)과 RTL(Register-Transfer Level) 모델링 기법으로 설계하였다. 본 논문에서 설계한 CableCard의 Physical Layer는 PCMCIA Interface, Command Inteface 그리고 MPEG-2 TS Interface 로 구성된다. CableCard가 전원이 인가될 때, 카드 초기화를 위하여 동작하는 PCMCIA 인터페이스는 16 비트 PC 카드 SRAM 타입으로 2MByte Memory와 100ns access time으로 동작할 수 있게 설계하였다. PCMCIA 카드 초기화 동작이 완료된 후, CableCard의 기능을 수행하기 위하여 두 개의 논리적 인터페이스가 정의되는데 하나는 MPEG-2 TS 인터페이스이고, 다른 하나는 호스트(셋톱박스)와 모듈 사이의 명령어들을 전달하는 명령어 인터페이스(Command Interface)이다. 명령어 인터페이스(Command Interface)는 셋톱박스의 CPU와 통신하기 위한 1KByte의 Data Channel과 OOB(Out-Of-Band) 통신을 위한 4KByte의 Extended Channel 로 구성되고, 최대 20Mbits/s까지 동작한다. 그리고 MPEG-2 TS는 100Mbits/s까지 동작을 수행할 수 있게 설계하였다. 설계한 코드를 실행한 후, Cadence사의 SimVision을 통해서 타이밍 시뮬레이션을 검증하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.2A
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• pp.90-97
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• 2005

Generally, DAB systems are divided into two categories, a stand-alone type and a PC/PDA-based type. The PC/PDA-based type has less mobility comparing to the stand-alone type, nevertheless, it has the advantage of using memory, audio/video decoder, or other resources of PC/PDA. The DAB receiver implemented in this paper is a PC-based receiver system employing USB interface. The USB interface bridge is designed using FPGA and EZ-USB development kit and the implemented DAB receiver adopts the bridge and makes use of the stand-alone typed DRK-026 receiver for experiments. The USB interface bridge transforms serial data into USB packets and all of related signals are controlled by hardware logics. The operation of the implemented DAB receiver is verified by sending audio data into the PC for decoding through USB interface bridge.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.712-713
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• 2011

In this paper, the AMBA AXI slave unit that can verify the pipelined arithmetic unit is proposed and the 2-stage 16-bit pipelined multiplier is introduced as design example. The proposed AXI slave unit consists of input buffer block memory, control registers, pipelined arithmetic unit, control unit, output buffer block memory, and AXI slave interface unit. The main operational procedures are divided into the following steps, such as burst-mode input data loading for the input buffer memory, programming of control registers, arithmetic operations for block data in the input buffer memory, and burst-mode output data unloading from output buffer memory to host processor. Because the proposed AXI slave unit is general structure, it can be efficiently applicable to AMBA AXI and AHB slave unit with pipelined arithmetic unit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.55-61
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• 2000

This paper presents an efficient hardware architecture of frame memory interface in MPEG-2 video encoder. To reduce the size of memory buffers between SDRAM and the frame memory module, the number of clocks needed for each memory access is minimized with dual bank operation and burst length change. By allocating the remaining cycles not used by SDRAM access, to the random access cycle, the internal buffer size, the data bus width, and the size of the control logic can be minimized. The proposed architecture is operated with 54MHz clock and designed with the VT $I^{тм}$ 0.5 ${\mu}{\textrm}{m}$ CMOS TLM standard cell library. It is verified by comparing the test vectors generated by the c-code model with the simulation results of the synthesized circuit. The buffer area of the proposed architecture is reduced to 40 % of the existing architecture.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.