• 제목/요약/키워드: memory interface

검색결과 511건 처리시간 0.026초

MNOS 기억소자의 계면상태밀도의 에너지 분포의 결정 (Determination of Energy Distribution of Interface State Density in the MNOS Memory Device)

  • 한태현;강창수;박종하;서광열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 추계학술대회 논문집
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    • pp.1-4
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    • 1988
  • The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

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항공교통관제시스템에 대한 사용자 인터페이스 만족도 조사 (User Interface Satisfaction of the Air Traffic Control System)

  • 송창선;손영우;권혁진
    • 한국항공운항학회지
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    • 제22권4호
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    • pp.1-7
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    • 2014
  • The purpose of study is to investigate the current user interface level of air traffic control system with the usability analysis and satisfaction survey questionnaire on user satisfaction. Think aloud protocol is used to identify not only task analysis, but also the level of user-friendliness of the FIMS and ASDE system, and the user interface questionnaires was conducted by QUIS. We collected data from 6 controllers for Think aloud protocol and 15 controllers for QUIS in Incheon airport. The results showed that the system was the valuable tool for ensuring human performance with the support of memory and the facilitation of decision-making tasks. It helps air traffic controllers perform better and minimize errors in a congested time. The human-computer interface system design, however, was not applied, which led to the increase of workload. Air traffic controller participation in software development provided excellent examples for applications in terms of software in FIMS. Based on these results, the study provided that the usability of system interface was necessary to take into account human factors. The development and design of system was discussed in User Interface environment.

Pt 나노입자가 분산된 SiO2 박막의 저항-정전용량 관계 (Relation between Resistance and Capacitance in Atomically Dispersed Pt-SiO2 Thin Films for Multilevel Resistance Switching Memory)

  • 최병준
    • 한국재료학회지
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    • 제25권9호
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    • pp.429-434
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    • 2015
  • Resistance switching memory cells were fabricated using atomically dispersed Pt-$SiO_2$ thin film prepared via RF co-sputtering. The memory cell can switch between a low-resistance-state and a high-resistance-state reversibly and reproducibly through applying alternate voltage polarities. Percolated conducting paths are the origin of the low-resistance-state, while trapping electrons in the negative U-center in the Pt-$SiO_2$ interface cause the high-resistance-state. Intermediate resistance-states are obtained through controlling the compliance current, which can be applied to multi-level operation for high memory density. It is found that the resistance value is related to the capacitance of the memory cell: a 265-fold increase in resistance induces a 2.68-fold increase in capacitance. The exponential growth model of the conducting paths can explain the quantitative relationship of resistance-capacitance. The model states that the conducting path generated in the early stage requires a larger area than that generated in the last stage, which results in a larger decrease in the capacitance.

재산화 질화산화 게이트 유전막을 갖는 전하트랩형 비휘발성 기억소자의 트랩특성 (Trap characteristics of charge trap type NVSM with reoxidized nitrided oxide gate dielectrics)

  • 홍순혁;서광열
    • 한국결정성장학회지
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    • 제12권6호
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    • pp.304-310
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    • 2002
  • 실리콘 기판 위의 초기 산화막을 NO 열처리 및 재산화 공정방법으로 성장한 재산화된 질화산화막을 게이트 유전막으로 사용한 새로운 전하트랠형 기억소자로의 응용가능성과 계면트랩특성을 조사하였다. 0.35$\mu$m CMOS 공정기술을 사용하여 게이트 유전막은 초기산화막을 $800^{\circ}C$에서 습식 산화하였다 전하트랩영역인 질화막 층을 형성하기 위해 $800^{\circ}C$에서 30분간 NO 열처리를 한 후 터널 산화막을 만들기 위해 $850^{\circ}C$에서 습식 산화방법으로 재산화하였다. 프로그램은 11 V, 500$\mu$s으로 소거는 -l3 V, 1 ms의 조건에서 프로그래밍이 가능하였으며, 최대 기억창은 2.28 V이었다. 또한 11 V, 1 ms와 -l3 V, 1 ms로 프로그램과 소거시 각각 20년 이상과 28시간의 기억유지특성을 보였으며 $3 \times 10^3$회 정도의 전기적 내구성을 나타내었다. 단일접합 전하펌핑 방법으로 소자의 계면트랩 밀도와 기억트랩 밀도의 공간적 분포를 구하였다. 초기상태에서 채널 중심 부근의 계면트랩 및 기억트랩 밀도는 각각 $4.5 \times 10^{10}/{cm}^2$$3.7\times 10^{1R}/{cm}^3$ 이었다. $1 \times 10^3$프로그램/소거 반복 후, 계면트랩은 $2.3\times 10^{12}/{cm}^2$으로 증가하였으며, 기억트랩에 기억된 전하량은 감소하였다.

Flash Memory Card를 이용한 Intelligent Ambulatory Monitoring 시스템 설계 (Design of an Intelligent Ambulatory Monitoring System Using Flash Memory Card)

  • 송근국;이경중;윤형로
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1997년도 춘계학술대회
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    • pp.330-333
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    • 1997
  • In this paper, we designed a low power and small-sized, light weighted intelligent ambulatory monitoring system using a flash memory card. The system's hardware specifications are as follows: 2 channels, 8bit/250Hz sampling rate, 20M byte storage capacity, a single-chip microcontroller (68HC11E9). To easily interface with PC based system, FFS(Flash File System) was used. We obtained the QRS detection rate of 99.14 through the evaluation with MIT/BIH database.

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TiNi/Al 6061 형상기억 복합재료의 강도해석 모듈 개발 (Development of Strength Analysis Modules for TiNi/Al 6061 Shape Memory Alloy)

  • 이동화;박영철;박동성;이규창
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2001년도 춘계학술대회 논문집
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    • pp.692-696
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    • 2001
  • Thermo-mechanical behavior and mechanical properties of intelligent polymer matrix composite with SMA fiber are experimentally studied. It is found that increments of compressive thermal strain is observed as the pre-strain and TiNi volume fraction increase. The smartness of the SMA is given due to the shape memory effect of the TiNi fiber which generates compressive residual stress in the matrix material when heated after being prestrained. In the paper, alloy is based on the general purpose commercial code ANSYS. And for the purpose of easy and fast user's analysis, it is developed the Graphical User Interface by using Tcl/Tk language.

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형상기억합금을 이요한 능동내시경 작동기의 시뮬레이션 (Simulation of an Active Catheter Actuator Using Shape Memory Alloy)

  • 권대규;윤여흥;유기호;이성철
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2000년도 추계학술대회 논문집
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    • pp.72-75
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    • 2000
  • This paper presents a simulation study on the description of the motion and the control of an active catheter actuator with multi-link structure actuated by Shape Memory Alloy(SMA). The model of an active catheter adopted in this paper has 3 links, and the individual links are composed of 3 micro coils of SMA for the omni-directional motion. In order to analyze the motions of multi-link structure, 3-dimensional kinematics description is presented. Also, the motion control of the end point of an active catheter using simple Neural Network is shown based on GUI(Graphic User Interface) system.

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A Finite Element Model for Bipolar Resistive Random Access Memory

  • Kim, Kwanyong;Lee, Kwangseok;Lee, Keun-Ho;Park, Young-Kwan;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권3호
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    • pp.268-273
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    • 2014
  • The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.

원격측정용 PCM 데이터 저장장치 개발 (Development of PCM Data Recorder for Telemetry System)

  • 고광렬;이상범;이현규;김환우
    • 한국군사과학기술학회지
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    • 제14권4호
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    • pp.607-614
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    • 2011
  • This paper describes the development of pulse code modulation(PCM) data recorder with design, implementation and environmental test. PCM serial data that diverged from telemetry encoder output is used as the input and is reformed to parallel signal through FPGA processing. Controllers construct the packet by the sector and record it into non-volatile memory. Compact flash(CF) memory for data storage media, USB interface for data downloading, and a software for operating status diagnosis and file format conversion are used.

Fabrication and AE Characteristics of TiNi/ A16061 Shape Memory Alloy Composite

  • Park, Young-Chul;Lee, Jin-Kyung
    • Journal of Mechanical Science and Technology
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    • 제18권3호
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    • pp.453-459
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    • 2004
  • TiNi/ Al6061 shape memory alloy (SMA) composite was fabricated by hot press method to investigate the microstructure and mechanical properties. Interface bonding between TiNi reinforcement and A1 matrix was observed by using SEM and EDS. Pre-strain was imposed to generate compressive residual stress inside composite. A tensile test for specimen, which under-went pre-strain, was performed at high temperature to evaluate the variation of strength and the effect of pre-strain. It was shown that interfacial reactions occurred at the bonding between matrix and fiber, creating two inter-metallic layers. And yield stress increased with the amount of pre-strain. Acoustic Emission technique was also used to nondestructively clarify the microscopic damage behavior at high temperature and the effect of pre-strain of TiNi/ Al6061 SMA composite.