• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.118-123
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• 2020

In this paper, the design method of asynchronous nonvolatile memory module that can efficiently process and store large amounts of data without loss when the power turned off is proposed and implemented. PSRAM, which takes advantage of DRAM and SRAM, was used for data processing, and NAND flash memory was used for data storage and backup. The problem of a lot of signal interference due to the characteristics of memory devices was solved through PCB design using high-density integration technology. In addition, a boost circuit using the super capacitor of 0.47F was designed to supply sufficient power to the system during the time to back up data when the power is off. As a result, an asynchronous nonvolatile memory module was designed and implemented that guarantees reliability and stability and can semi-permanently store data for about 10 years. The proposed method solved the problem of frequent data loss in industrial sites and presented the possibility of commercialization by providing convenience to users and managers.

• Proceedings of the Korea Society of Design Studies Conference
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• 2003.11a
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• pp.140-141
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• 2003

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.286-291
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• 2015

For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.143-151
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• 2010

In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.8
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• pp.23-32
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• 1998

In this paper, we propose a memory compiler to genrate embedded RAMs and ROMs for ASIC chips. We design the leaf cells to be compsoed of memory blocks. The compiler is built using tile-based method to simplify routing. The compiler can genrate any memory layouts to satisfy 64 to 4096 words and 4 to 256 bits per word. The technology we used here is 0.8.mu.m single poly double metal CMOS process. The address access time and power consumption are verifie dthrough the HSPICE simulation.

• Journal of the Korea Society of Computer and Information
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• v.23 no.4
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• pp.81-88
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• 2018

In this paper, we present some problems with the Groupware Messenger functionality based on dot net 2.0 and implement a new design structure to solve them. They include memory leakage, slow processing, and client window memory crash. These problems resulted in the inconvenience of using instant messaging and the inefficient handling of office tasks. Therefore, in this paper, instant messaging functionality is implemented according to a new design architecture. The new system upgrades dot net 4.5 for clients and deploys the new features based on MQTT for the messenger server. We verify that the memory leak problem and client window memory crash issues have been eliminated on the system with the new messenger functionality. We measure the amount of time it takes to bind data to a set of messages and evaluate the performance, compared to a given system. Through this comparative evaluation, we can see that the new system is more reliable and performing.

• Archives of design research
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• v.13
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• pp.15-24
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• 1996

No mater how brilliant brain a man has, as time goes by, it is certain to fall into a lapse of memory phenomenon in according to cease to exist as a matter of course. But as previously stated, there is no room for douby, if we make advertising information for being changed into a sign which is to be treated easily and simplified, we can easily memory and withdraw it. In other words, the information is to be coded simpler, the memory and recollection of it is to be easier as wll as we can raise the precision rate. Good many advertising today, it appears, try to raise the acknowlegement rate with shock of good-sized and exposure frequency. In this advertising form, we can aspire to the intention of advertiser to try to get lapse of the message of advertising. Of course, even if it cannot be an index of every advertising information called simplified memory and recollection rate, it should be emphasized that it cannot but have something to do with the consumer's memory. Which to be obtained by invested advertisement. As for it, there are so many things to be taken charge of a lots of content by graphic designer: to be obtained mental distribution of resources inconnected with a desire of consumer, to be converted memory information into being less than that and treated easier, and to be correlated the memory information with the previously known things.

• IEMEK Journal of Embedded Systems and Applications
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• v.6 no.5
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• pp.263-272
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• 2011

The complexity of flash memory based storage systems is high due to diverse host interfaces and other design choices such as mapping granularity, flash memory controller execution models and so on. Thus, it is possible that the actual performance after implementation is not consistent with the target performance. This paper demonstrates that the performance prediction of flash memory based storage systems is possible through performance modeling that takes into account various design parameters. In the performance modeling, the FTL, which is the core element of flash memory based storage systems, is modeled as a set of (copy-on-write) logs and their interactions. Also, the flash memory controller is modeled based on the classification proposed in the design of the Ozone flash controller. In this study, the performance model has been implemented using Simulink and experimental results are presented and analyzed.

• ETRI Journal
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• v.40 no.6
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• pp.759-773
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• 2018

Uncore components such as on-chip memory systems and on-chip interconnects consume a large amount of energy in emerging embedded applications. Few studies have focused on next-generation analytical models for future chip-multiprocessors (CMPs) that simultaneously consider the impacts of the power consumption of core and uncore components. In this paper, we propose a convex-optimization approach to design heterogeneous uncore architectures for embedded CMPs. Our convex approach optimizes the number and placement of memory banks with different technologies on the memory layer. In parallel with hybrid memory architecting, optimizing the number and placement of through silicon vias as a viable solution in building three-dimensional (3D) CMPs is another important target of the proposed approach. Experimental results show that the proposed method outperforms 3D CMP designs with hybrid and traditional memory architectures in terms of both energy delay products (EDPs) and performance parameters. The proposed method improves the EDPs by an average of about 43% compared with SRAM design. In addition, it improves the throughput by about 7% compared with dynamic RAM (DRAM) design.

• Journal of IKEEE
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• v.25 no.4
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• pp.778-781
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• 2021

In this paper, we propose the 16-layer 3D NAND Flash memory compact modeling using SPICE. In the same structure and simulation conditions, the channel potential about Down Coupling Phenomenon(DCP) and Natural Local Self Boosting (NLSB) were simulated and analyzed with Technology Computer Aided Design(TCAD) tool Atlas(Silvaco^TM) and SPICE, respectively. As a result, it was confirmed that the channel potential of TCAD and SPICE for the two phenomena were almost same. The SPICE can be checked the device structure intuitively by using netlist. Also, its simulation time is shorter than TCAD. Therefore, using SPICE can be expected to efficient research on 3D NAND Flash memory.