• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.10 s.181
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• pp.2461-2468
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• 2000

In this paper, single fiber pull-out test is used to measure the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory alloy composite with temperature. Fiber and matrix of $Ti_{50}-Ni_{50}$ shape memory alloy composite are respectively $Ti_{50}-Ni_{50}$ shape memory alloy and epoxy resin. To strengthen the interfacial bonding shear stress, various surface treatments are used. They are the hand-sanded surface treatment, the acid etched surface treatment and the silane coupled surface treatment etc.. The interfacial bonding shear strength of surface treated shape memory alloy fiber is greater than that of surface untreated shape memory alloy fiber by from 10% to 16%. It is assured that the hand-sanded surface treatment and the acid etched surface treatment are the best way to strengthen the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory composite. The best treatment condition of surface is 10% HNO$_3$ solution in the etching method to strengthen the interfacial bonding shear strength of $Ti_{50}-Ni_{50}$ shape memory alloy composite.

• Korean Journal of Cognitive Science
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• v.18 no.2
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• pp.113-138
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• 2007

The effects of schema on accurate and false memories of items in a scene were investigated in two experiments: Recognition of items in a scene was tested immediately in Experiment 1 and three days later in Experiment 2. In both experiments, the following three variables were manipulated: Exposure time (250ms or 10000ms), picture mode (completed pictures or scrambled pictures), and manipulation mode (missing item or substituted item). Experiment 1 had yielded three important results: First, although accurate memory for presented items got increased when the exposure time was longer, false memory of the critical lures was not changed. Second, false memory of critical lures in the missing condition, where there was not any conflict between verbatim information and gist information, was higher than that of the substituted condition, where verbatim information of the item that replaced the lure was in conflict with the gist information. Third, accurate memory for atypical items in the substituted rendition, which had replaced the critical lures and in conflict with the schema, was higher than that in the missing condition. In Experiment 2, recognition test were administered 72 hours after the participants saw the picture. The three effects mentioned in Experiment 1 had disappeared in Experiment 2. The results of Experiment 2 might be due to the selective weakening of verbatim information compared to the persistence of the gist (or schematic) information. The results of Experiments 1 and 2 showed that false memory of critical lures is more persistent than the accurate memory of non-critical information. Theoretical implications of the results were considered in terms of the function of the verbatim and gist information.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.6 no.4
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• pp.288-292
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• 2006

Many authors have studied several concepts of fuzzy systems. Balasubramaniam and Muralisankar (2004) proved the existence and uniqueness of fuzzy solutions for the semilinear fuzzy integrodifferential equation with nonlocal initial condition. Recently, Park, Park and Kwun (2006) find the sufficient condition of nonlocal controllability for the semilinear fuzzy integrodifferential equation with nonlocal initial condition. In this paper, we study the existence and uniqueness of solutions for the semilinear fuzzy integrodifferential equations with nonlocal condition and forcing term with memory in $E_{N}$ by using the concept of fuzzy number whose values are normal, convex, upper semicontinuous and compactly supported interval in $E_{N}$.

• Science of Emotion and Sensibility
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• v.15 no.4
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• pp.477-488
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• 2012

The effort of implementing realistic 3-D depth on 2-D images has been continued persistently with a theoretical understanding of depth perception and its related technical development. The present article briefly reviews a number of popular stereoscopes for studying stereoscopic depth perception according to their implementation principles, and introduces a behavioral experiment as a technical example in which the active-shutter glasses were used. In the present study, participants were tested for their visual memory against perceived depth among a set of items. The depth of the memory and test items was manipulated to be 1) monocular, 2) binocular, or 3) both-monocular-and-binocular respectively. The memory performance was worst in the binocular-depth condition, and best however in the both-monocular-and-binocular condition. These results indicate that visual memory may benefit more from monocular depth than stereoscopic depth, and further suggest that the storage of depth information into visual memory would require both binocular and monocular information for its optimal memory performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1132-1134
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• 2006

In this research, we examined the correlation between the polymer wall boundary condition and the dynamic/ memory behavior of the ferroelectric liquid crystal (FLC) molecules. It was shown that the polymer wall perpendicular to the rubbing direction induces asymmetric switching to the rubbing direction and induce smaller cone angle angle of LC. On the contrary, in the cell with polymer wall parallel to the rubbing direction, the FLC molecules are oriented in the rubbing direction and shows symmetric switching and has larger cone angle. Memory behavior of each cell has strong correlation with the dynamic state of the FLC molecules. Response time of each cell was also examined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Statistical Society Conference
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• 2005.05a
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• pp.197-201
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• 2005

In this article, we will compare the performance of the mean control chart, the median control chart, the transformed mean control chart, the transformed median control chart, and the precedence control chart by simulation study. For control charts with transformed data, Yeo-Johnson transformation is used. Under the in-control condition, ARL's in all control charts coincide with the designed ARL in the normal distribution, but in the other distributions, only the precedence control chart provides the in-control ARL as designed. Under the out-of-control condition, the mean control chart is preferred in the normal distribution and the median control chart is preferred in the heavy-tailed distribution and the precedence control chart outperforms in the short-tailed distribution.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.559-567
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• 2018

In this paper, we propose a new load forecasting method for smart air conditioning (A/C) based on the modified thermodynamics of indoor temperature and the unbiased finite memory estimator (UFME). Based on modified first-order thermodynamics, the dynamic behavior of indoor temperature can be described by the time-domain state-space model, and an accurate estimate of indoor temperature can be achieved by the proposed UFME. In addition, a reliable A/C load forecast can be obtained using the proposed method. Our study involves the experimental validation of the proposed A/C load forecasting method and communication construction between DR server and HEMS in a test bed. Through experimental data sets, the effectiveness of the proposed estimation method is validated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1097-1100
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• 2001

In this paper, the electro-chemical-machining characteristics of Ni-Ti Shape Memory Alloy(SMA) was investigated. From the experimental results, the optimal electro chemical machining conditions for satisfying the machining quality(fine surface & high recovery stress) might be confirmed. And it was concluded that optical electro chemical condition for Ni-Ti SMA could be obtained at approximately 100% current efficiency and high frequency pulse current.