• 제목/요약/키워드: memory condition

검색결과 413건 처리시간 0.029초

Unique local deformations of the superelastic SMA rods during stress-relaxation tests

  • Ashiqur Rahman, Muhammad;Rahman Khan, Mujibur
    • Structural Engineering and Mechanics
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    • 제22권5호
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    • pp.563-574
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    • 2006
  • This paper studies mechanical behavior of the superelastic shape memory alloy (SMA) rods in terms of local deformations and time via tensile loading-unloading cycles for both ends fixed end constraints. Besides the unique stress induced martensitic transformation (SIMT), SMA's time dependent behavior when it is in mixed-phase condition upon loading and unloading, also need careful attention with a view of investigating the local deformation of the structural elements made of the same material. With this perspective, the so-called stress-relaxation tests have been performed to demonstrate and investigate the local strains-total strains relationships with time, particularly, during the forward SIMT. Some remarkable phenomena have been observed pertaining to SIMT, which are absent in traditional materials and those unique phenomena have been explained qualitatively. For example, at the stopped loading conditions the two ends (fixed end and moving end of the tensile testing machine) were in fixed positions. So that there was no axial overall deformation of the specimen but some notable increase in the axial local deformation was shown by the extensometer placed at the middle of the SMA specimen. It should be noted that this peculiar behavior termed as 'inertia driven SIMT' occurs only when the loading was stopped at mixed phase condition. Besides this relaxation test for the SMA specimens, the same is performed for the mild steel (MS) specimens under similar test conditions. The MS specimens, however, show no unusual increase of local strains during the stress relaxation tests.

Possibility of Chaotic Motion in the R&D Activities in Korea

  • Loh, Jeunghwee
    • Journal of Information Technology Applications and Management
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    • 제21권3호
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    • pp.1-17
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    • 2014
  • In this study, various characteristics of R&D related economic variables were studied to analyze complexity of science and technology activities in Korea, as reliance of R&D activities of the private sector is growing by the day. In comparison to other countries, this means that it is likely to be fluctuated by economic conditions. This complexity characteristic signifies that the result of science and technology activities can be greatly different from the anticipated results - depending on the influences from economic conditions and the results of science and technology activities which may be unpredictable. After reviewing the results of 17 variables related to science and technology characteristics of complex systems intended for time-series data - in the total R&D expenditure, and private R&D expenditure, numbers of SCI papers, the existence of chaotic characteristics were. using Lyapunov Exponent, Hurst Exponent, BDS test. This result reveals science and technology activity of the three most important components in Korea which are; heavy dependence on initial condition, the long term memory of time series, and non-linear structure. As stable R&D investment and result are needed in order to maintain steady development of Korea economy, the R&D structure should be less influenced by business cycles and more effective technology development policy for improving human resource development must be set in motion. And to minimize the risk of new technology, the construction of sophisticated technology forecasting system should take into account, for development of R&D system.

조현병 및 정신증 고위험군에서의 작업기억 손상 (Working Memory Deficits in Ultra-High Risk for Psychosis and Schizophrenia)

  • 전임홍;박종석;박진영;조혜현;구세준;이은;안석균;유선국
    • 대한조현병학회지
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    • 제15권2호
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    • pp.66-72
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    • 2012
  • Objectives : The aim of this study was to investigate whether verbal and spatial working memory functions were impaired not only in patients with schizophrenia but also in people at ultra-high risk for first-episode psychosis. Methods : Twenty-five patients (M 13, F 12) with schizophrenia (SPR), 21 people at ultra-high risk for psychosis (UHR)(M 10, F 11) and 19 normal controls (NC)(M 10, F 9) were recruited. The working memory was assessed by using the verbal and spatial n-back test. The working memory load increased incrementally from the 0-back to the 3-back condition. Results : SPR performed significantly lower than NC and UHR in terms of hit rates of verbal and spatial n-back test. UHR subjects conducted significantly lower than NC and higher in trend-level than SPR in terms of hit rates of verbal and spatial n-back test. These differences were derived from the high working memory load (2-back and 3-back), not from the low working memory load (0-back and 1-back). There was no significant difference between the verbal and spatial n-back test across the three groups. Conclusion : These findings suggest that verbal and spatial working memory dysfunction may be general rather than differential in terms of stimuli modality, and this working memory deficit may be an important trait factor in schizophrenia.

동시과제의 처리 적절성이 미래계획기억 수행에 미치는 효과 (The effect of task appropriate processing of on-going task on event-based prospective memory)

  • 박영신;임재희;장미숙
    • 인지과학
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    • 제22권4호
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    • pp.449-467
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    • 2011
  • 본 연구는 동시과제의 처리적절성이 미래계획기억의 수행에 미치는 영향을 알아보기 위하여 고안되었다. 동시과제와 미래기억과제 간의 처리적절성을 동시과제 단어목록 유형과 미래기억과제 목표단어들의 범주를 통해 조작하였다. 동시과제의 단어목록은 의미연합 목록과 모양연합 목록으로 구성되었으며, 미래기억과제 목표단어들은 의미처리를 중심으로 기억할 수 있는 단어들과 글자모양 중심으로 기억할 수 있는 단어들로 구성되었다. 과제처리적 절성 이론에 따라서, 동시과제의 연합차원이 미래계획기억과제의 연합차원과 동일할 때에, 미래계획기억의 수행이 좋을 것으로 예상하였다. 총 50명의 참가자들이 두 개의 실험에 참가하였다. 실험 결과, 미래계획기억과제의 수행은 동시과제와 미래계획기억과제의 연합차원이 같을 때에 좋게 나타났다. 또한 미래계획기억 목표단어와 동시과제의 처리적절성이 높은목록에 대해 동시과제의 목록 재인율도 높게 나타났다. 이러한 결과는 기존의 과제처리적절성 이론의 최근 연구 결과들에 비추어 논의되었다.

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Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory

  • Kim, Seunghyun;Kwon, Dae Woong;Lee, Sang-Ho;Park, Sang-Ku;Kim, Youngmin;Kim, Hyungmin;Kim, Young Goan;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.167-173
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    • 2017
  • In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.

Electrical Properties of Metal-Oxide Quantum dot Hybrid Resistance Memory after 0.2-MeV-electron Beam Irradiation

  • Lee, Dong Uk;Kim, Dongwook;Kim, Eun Kyu;Pak, Hyung Dal;Lee, Byung Cheol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.311-311
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    • 2013
  • The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

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얼굴표정의 긍정적 정서에 의한 시각작업기억 향상 효과 (Accurate Visual Working Memory under a Positive Emotional Expression in Face)

  • 한지은;현주석
    • 감성과학
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    • 제14권4호
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    • pp.605-616
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    • 2011
  • 본 연구는 시각작업기억에 저장이 요구되는 얼굴 자극이 보유한 긍정적, 부정적 그리고 중립적 정서가 기억 정확성에 미치는 영향을 조사하였다. 참가자들은 유쾌, 불쾌 및 무표정의 세 가지 표정 유형 중 하나가 무선적으로 부여된 얼굴들의 표정을 기억한 후 잠시 후 제시된 검사 얼굴들에 대한 대조를 통해 기억항목과 검사항목 간 얼굴 표정의 변화 유무를 보고하였다. 얼굴 표정의 변화에 대한 탐지정확도를 측정한 결과 기억항목의 노출시간이 500ms이었을 경우, 긍정적 표정을 보유한 기억항목에 대한 변화탐지는 부정 및 중립 표정에 비해 상대적으로 정확했다. 반면에 노출시간이 1000ms로 연장되자 이러한 차이는 관찰되지 않았다. 이러한 결과는 긍정적 정서가 시각작업기억의 정확성을 향상시킬 수 있음을 의미하며, 특히 긍정적 정서에 의한 기억 촉진 효과는 기억 표상 형성에 있어서 요구되는 시간이 상대적으로 촉박한 경우에 나타남을 의미한다. 따라서 본 연구는 작업기억과 정서간의 관계를 규명하기 위하여 비교적 단순한 과제인 변화탐지과제를 사용하여 긍정적 정서가 시각작업기억 표상 형성의 효율성을 향상시킨다는 것을 발견했다는 점에서 중요한 시사점을 제공한다.

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Metabolic changes during adaptation to saline condition and stress memory of Arabidopsis cells

  • Chun, Hyun Jin;Park, Mi Suk;Lee, Su Hyeon;Jin, Byung-Jun;Cho, Hyun Min;Hong, Young-Shick;Kim, Min Chul
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2017년도 9th Asian Crop Science Association conference
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    • pp.175-175
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    • 2017
  • To understand molecular mechanisms underlying adaptation of plant cells to saline stress and stress memory, we developed Arabidopsis callus suspension-cultured cells adapted to high salt. Adapted cells to high salt exhibited enhanced tolerance compared to control cells. Moreover, the salt tolerance of adapted cells was stably maintained even after the stress is relieved, indicating that the acquired salt tolerance of adapted cells was memorized. In order to characterize metabolic responses of plant cells during adaptation to high salt stress as well as stress memory, we compared metabolic profiles of salt-adapted and stress-memorized cells with control cells by using NMR spectroscopy. A principle component analysis showed clear metabolic discrimination among control, salt-adapted and stress-memorized cells. Compared with control cells, metabolites related to shikimate metabolism such as tyrosine, and flavonol glycosides, which are related to protective mechanism of plant against stresses were largely up-regulated in adapted cell lines. Moreover, coniferin, a precursor of lignin, was more abundant in salt-adapted cells than control cells. Cell morphology analysis using transmission electron microscopy indicated that cell wall thickness of salt-adapted cells was significantly induced compared to control cells. Consistently, salt adapted cells contained more lignin in their cell walls compared to control cells. The results provide new insight into mechanisms of plant adaptation to saline stress as well as stress memory in metabolic level.

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형상기억복합재료에 대한 온라인 모니터링 시스템 개발 (Development of On-line Monitoring System for Shape Memory Alloy Composite)

  • 이진경;박영철;이민래;이동화;이규창
    • 비파괴검사학회지
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    • 제23권1호
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    • pp.7-13
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    • 2003
  • 형상기억복합재료를 제조하기 위하여 핫프레스 방법을 이용하여 최적의 제조조건을 도출하였으며 냉간압연에 의해 기지재와 강화재의 계면접합을 강화하여 강도를 증가시켰다. 이러한 방법에 의해 제조된 형상기억복합재료에 대하여 외부 하중에 의한 손상정도와 균열의 발생을 감지하여 균열 발생 및 진전을 억제하는 온라인 모니터링 시스템을 개발하고자 한다. 이를 위하여 음향방출 신호의 파라미터를 이용하여 손상에 따른 최적의 AE 파라미터를 도출하였으며 가역시스템을 이용하여 형상기억합금을 가열함으로써 형상기억합금의 수축에 의한 복합재료 내부에 균열진전을 억제시키는 시스템을 개발하였다

효율적인 비디오 프록시 서버를 위한 캐시 관리 방법 (A Cache Management Technique for an Efficient Video Proxy Server)

  • 이준표;박성한
    • 대한전자공학회논문지SP
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    • 제46권4호
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    • pp.82-88
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    • 2009
  • 사용자와 근거리에 위치한 비디로 프록시 서버는 자주 요청되는 동영상 데이터들을 저장하고 사용자에게 직접 전송함으로써 초기 전송 지연과 네트워크 트래픽을 효과적으로 감소시킨다. 그러나 비디오 프록시 서버는 원격지의 중앙 비디오 서버에 비해 비교적 제한된 저장 공간을 가진다. 따라서 사용자들이 계속 요청하는 동영상만을 선별하여 저장하도록 하는 방법이 필요하다. 이를 위해 본 논문에서는 비디오 프록시 서버에서의 가상 메모리에 바탕을 둔 가상 캐싱 기법을 제안한다. 제안하는 알고리즘은 사용자가 요청한 동영상 데이터가 비디오 프록시 서버에 존재하지 않는 경우 원격지의 중앙 비디오 서버로부터 요청된 동영상 데이터를 전송받아 사용자에게 전송하고 가상 메모리에 저장한다. 저장된 동영상 데이터는 이후 사용자의 요청이 있는 경우 사용자에게 전송된다. 이때 가상 메모리에 저장된 동영상 데이터는 사용자의 요청의 상태에 따라 가상 메모리로부터 삭제되거나 비디오 프록시 서버에 저장된다. 또한 가상 메모리에서의 단편화를 막기 위하여 가상 메모리를 세그먼트 별로 영역을 구분한다. 실험을 통해 제안하는 방법이 기존의 방법들 보다 높은 적중률을 보이는 동시에 보다 적은 삭제 횟수를 보인다는 것을 확인한다.