• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.103-104
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• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Journal of KIISE:Software and Applications
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• v.31 no.8
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• pp.1054-1061
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• 2004

At recent, people can easily access to information by Internet to be rapidly evolving. And also, the amount is rapidly increasing. So the techniques, to automatically extract the required information are very important to reduce the time and the effort for retrieving information. In this paper, we describe a collaborative filtering system for automatically recommending high-quality information to users with similar interests on arbitrarily narrow information domains. It asks a user to rate a gauge set of items. It then evaluates the user's rates and suggests a recommendation set of items. We interpret the process of evaluation as an inference mechanism that maps a gauge set to a recommendation set. We accomplish the mapping with FAM (Fuzzy Associative Memory). We implemented the suggested system in a Web server and tested its performance in the domain of retrieval of technical papers, especially in the field of information technologies. The experimental results show that it may provide reliable recommendations.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.124-131
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• 2014

This paper describes a design of an adaptive baseband modem based on TDMA(time division multiple access) with a relay protocol function for wireless personal area networks. The designed baseband modem is controlled by a master synchronization signal and can be configured a relay network up to 14 hops. For efficient data relay communications, the internal buffer design is optimized by implementing a priority memory bus controller to a single port memory. And the priority memory bus controller is also designed to minimize the number of synthesized logic gates. To implement the synchronization function of the narrowband TDMA relay communication, the number of gates has been reduced by dividing the frame synchronization circuits and the network slot synchronization circuits. By using these methods, the number of gates are used about 37%(34,000 gates) on Xilinx FPGA XC6SLX9 which has 90,000 gates. For the 1024-bit frame size with a 32-bit synchronization word, the communication reception rate is 96.4%. The measured maximum transmission delay of the designed baseband modem is 230.4 msec for the 14-hop relay communication.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7B
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• pp.647-659
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• 2003

LPM(Longest Prefix Matching)searching in If address lookup is a major bottleneck of IP packet processing in the high speed router. In the conventional lookup table for the LPM searching in CAM(Content Addressable Memory) the complexity of fast update take 0(1). In this paper, we designed pipeline architecture for fast update of 0(1) cycle of lookup table and high throughput and low area complexity on LPM searching. Lookup-table architecture was designed by CAM(Content Addressable Memory)away that uses 1bit RAM(Random Access Memory)cell. It has three pipeline stages. Its LPM searching rate is affected by both the number of key field blocks in stage 1 and stage 2, and distribution of matching Point. The RTL(Register Transistor Level) design is carried out using Verilog-HDL. The functional verification is thoroughly done at the gate level using 0.35${\mu}{\textrm}{m}$ CMOS SEC standard cell library.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.386-392
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• 2015

Data in a image compression codec are processed with a specific regular block size. The processing order of block sized data is changed in specific function blocks and the data is packed in memory and read by a new sequence. To maintain a regular throughput rate, double buffering is normally used that interleaving two block sized memory to do concurrent read and write operations. Single buffering using only one block sized memory can be adopted to the simple data reordering, but when a complicate reordering occurs, irregular address changes prohibit from implementing adequate address generating for single buffering. This paper shows that there is a predictable and recurring regularity of changing address access orders within a finite updating counts and suggests an effective method to implement. The data reordering function using suggested idea is designed with HDL and implemented with TSMC 0.18 CMOS process library. In various scan blocks, it shows more than 40% size reduction compared with a conventional method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.9
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• pp.1382-1391
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• 2022

White-box cryptography can respond to white-box attacks that can access and modify memory by safely hiding keys in the lookup table. However, because the size of lookup tables is large and the speed of encryption is slow, it is difficult to apply them to devices that require real-time while having limited resources, such as IoT(Internet of Things) devices. In this work, we propose a scheme for collecting short-length plaintexts and processing them at once, utilizing the characteristics that white-box ciphers process encryption on a lookup table size basis. As a result of comparing the proposed method, assuming that the table sizes of the Chow and XiaoLai schemes were 720KB(Kilobytes) and 18,000KB, respectively, memory usage reduced by about 29.9% and 1.24% on average in the Chow and XiaoLai schemes. The latency was decreased by about 3.36% and about 2.6% on average in the Chow and XiaoLai schemes, respectively, at a Traffic Load Rate of 15 Mbps(Mega bit per second) or higher.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.1
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• pp.1-10
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• 2008

In this paper, we designed a facial feature(eyes, a moult and a nose) detection hardware based on the ICT transform which was developed for face detection earlier. Our design used a pipeline architecture for high throughput and it also tried to reduce memory size and memory access rate. The algerian and its hardware implementation were tested on the BioID database, which is a worldwide face detection test bed, and its facial feature detection rate was 100% both in software and hardware, assuming the face boundary was correctly detected. After synthesizing the hardware on Dongbu $0.18{\mu}m$ CMOS library, its die size was $376,821{\mu}m^2$ with the maximum operating clock 78MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.