• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.129-134
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• 2005

A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystal puller. The turbulent modeling was used to simulate the transport phenomena in 18' single crystal growing process. For small crucible angular velocity, the natural convection is dominant. As the crucible angular velocity is increased, the forced convection is increased and the distribution of temperature profiles is broadened. The cusp magnetic field reduces effectively the natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar in the case of conduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.327-333
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• 1998

The influence of slow cooling and annealing time in $O_2$in MPEG process on $J_c$ was investigated. From the measurement of $J_c$,SEM and XRD, it was observed that the critical current density was related with the slow cooling time and annealing time in $O_2$. The value of $J_c$ was the highest at slow cooling time of 40 hour. And also, the value of $J_c$ along the annealing time in $O_2$in the case of the slow cooling time of 40 hours was inclined to increase with annealing time. Consequently, it can be suggested that proper slow cooling time and annealing time after slow cooling in MPMG process be important to improve the critical characteristics.

• Journal of Korea Foundry Society
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• v.33 no.2
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• pp.69-74
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• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.115-121
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• 2012

Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.169-169
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• 1996

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.155-159
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• 2004

Numerical analysis which is based on finite element techniques, implicit Euler method and frontal solving algorithm was performed to study the effects of the crucible shape on the temperature of sapphire crystal and the shape of the melt/crystal interface in heat exchanger method. The computer simulation described here and effective to solving the heat transport phenomena with the transition of the interface shape from hemispherical to planar. In the work, various crucibles with differently shaped corners at their bottom are considered to improve the deflection of the melt/crystal interface. The shape of the crucible should be considered as one of the variables for the process optimization.

• Coupled systems mechanics
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• v.5 no.4
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• pp.341-353
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• 2016

Manufactures of multi-crystalline silicon ingots by means of the directional solidification system (DSS) is important to the solar photovoltaic (PV) cell industry. The quality of the ingots, including the grain size and morphology, is highly related to the shape of the crystal-melt interface during the crystal growth process. We performed numerical simulations to analyze the thermo-fluid field and the shape of the crystal-melt interface both for steady conditions and transient processes. The steady simulations are first validated and then applied to improve the hot zone design in the furnace. The numerical results reveal that, an additional guiding plate weakens the strength of vortex and improves the desired profile of the crystal-melt interface. Based on the steady solutions at an early stage, detailed transient processes of crystal growth can be simulated. Accuracy of the results is supported by comparing the evolutions of crystal heights with the experimental measurements. The excellent agreements demonstrate the applicability of the present numerical methods in simulating a practical and complex system of directional solidification system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.130-134
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• 2017

In this study, numerical simulation was performed to focus on optimized process condition for obtaining a long-term growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator ($CGSim^{TM}$, STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.