• Title/Summary/Keyword: meandered microstrip

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Effect of Loading Split-Ring Resonators in a Microstrip Antenna Ground Plane

  • Lee, Hong-Min
    • Journal of electromagnetic engineering and science
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    • v.15 no.2
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    • pp.120-122
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    • 2015
  • This study presents a new, simple method for improving the front-to-back (F/B) ratio of a microstrip patch antenna (MSA) based on surface wave suppression. The back radiation of the MSA is significantly reduced by using the meandered ground plane edges and placing split-ring resonators (SRRs) in the middle of the meandered slots. By loading SRRs near the center of the meandered ground plane edges, some parts of the diffracted back-lobe power density can be reduced further. Compared to the F/B ratio of a conventional MSA with a full ground plane of the same size, an improved F/B ratio of 18 dB has been achieved experimentally for our proposed MSA.

A Novel Multiple Band Antenna Design Implementing Unbalanced Feed-Lines and Meandered Patch Options (비대칭 급전선로와 패치설계를 이용한 다중대역 안테나의 설계)

  • Jung, Jin-Woo;Roh, Hyoung-Hwan;Park, Jun-Seok;Cho, Hong-Goo
    • 한국정보통신설비학회:학술대회논문집
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    • 2007.08a
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    • pp.427-431
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    • 2007
  • Applications in present-day mobile communication systems particularly require miniaturized dimensions and low-profiles of antenna in order to meet the mobile units. Thus, size reductions and bandwidth enhancements are becoming crucial design considerations for practical applications of microstrip antennas. The motivation of further experiments have been stepped to follow those studies for achieving compact and broadband, even multiplied operation modes, which are greatly increased with much attentions recently. To obtain broadband, single-feed, circularly polarized characteristics of microstrip antennas, a design with feed-line ought to be a factor of two. Usually, diagonally balanced-line feeds with hybrid coupler are employed to attain circular polarizations. We firstly formulated DGS (Defected Ground Structures) based operation principles of the entire microstrip components and therefore were able to derive impedance variance of feed-lines. After verifying corresponding experimental results, we targeted the frequency bands of UHF RFID (Ultra High Frequency Radio Frequency IDentification) and approximately of 0.4-2.4GHz have exhibited remarkable two resonance amplitudes as a dual band antenna. Our secondary researches were aimed to design quad band microstrip antenna which represents four resonance characteristics within the identical frequency bands as well. Microstrip patch has been meandered to lengthen the electrical paths, and the other design criteria with respecting physical parameters including radiation patterns and impedance bandwidths measurements will be described for verification. Advisable applications of these antennas can be GSM850, GSM900, GPS (L1-1575 and L2-1227) and UMTS-2110 of cellular systems, which extremely desire multiband and minimum size.

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Multiband Meandered Monopole Antenna for Mobile Applications

  • Lee, Jae-Kwan;Pyo, Seong-Min;Kim, Young-Sik
    • ETRI Journal
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    • v.32 no.3
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    • pp.475-478
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    • 2010
  • A multiband meandered monopole antenna is proposed for digital video broadcasting handheld (DVB-H), global positioning system, personal communications service, wireless broadband (Wibro), and wireless local area network (WLAN) applications. The proposed antenna consists of a meandered line, a shorted length strip line, and a conductor strip between a meandered line and a microstrip feed line. By tuning a short strip and a conductor, a multiband impedance matching is achieved. The proposed antenna has an omnidirectional radiation and yields an antenna gain of greater than -3 dBi in the DVB-H band and 4.5 dBi in the Wibro and WLAN bands. Details of the proposed antenna design and experimental results are presented.

Miniatured Planar Bandpass Filter Using Coupled Metamaterial Resonators

  • Kim, Gi-Rae
    • Journal of information and communication convergence engineering
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    • v.9 no.3
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    • pp.256-259
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    • 2011
  • In this article, new microstrip slow-wave bandpass filters using open loop resonator loaded with inter-digital capacitive fingers is proposed. The filter features not only compact in size, but also exhibits spurious stop-band rejection. Filters of this type with elliptic function and Chebyshev response are demonstrated. There is good agreement between experimental and full-wave electromagnetic (EM) simulation results.

The Design of Microstrip Band-Selective Filter with Narrow Stopband for UWB Application (협대역 저지 특성을 가지는 UWB용 마이크로스트립 필터 설계)

  • Roh, Yang-Woon;Hong, Seok-Jin;Jung, Kyung-Ho;Jung, Ji-Hak;Choi, Jae-Hoon
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2005.11a
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    • pp.7-12
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    • 2005
  • A compact microstrip band-selective filter for ultra-wideband (UWB) radio system is proposed. The filter combines the traditional short-circuited stub highpass filter and coupled resonator bandstop filter on both sides of the mitered 50-ohm microstrip line. To realize the pseudo-highpass filtering characteristic over UWB frequency band (3.1 GHz to 10.6 GHz), a distributed highpass filter scheme is adopted. Three coupled resonators are utilized to obtain the band stop function at the desired frequency band. By meandering the coupled resonators, there is 29% reduction in footprint compared to the traditional bandstop filter using L-shaped resonators. The measured results show that the filter has a wide passband of 146.7 % (2.1 GHz to 10.15 GHz) with low insertion loss and the stop band of 7.42 % (5.32 GHz to 5.73 GHz) for 3-dB bandwidth. The measured group delay is less than 0.7 ns within the passband except the rejection band.

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Miniatured Planar Bandpass Filter Using the Coupled Metamaterial Resonators (결합 메타물질 공진기를 이용한 소형화된 평면구조 대역통과여파기)

  • Xie, Tang-Yao;Park, Young-Bea;Kim, Gi-Rae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.10a
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    • pp.371-374
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    • 2010
  • In this article, new microstrip slow-wave bandpass filters using open loop resonator loaded with inter-digital capacitive fingers is proposed. The filter features not only compact in size, but also exhibits spurious stop-band rejection. Filters of this type with elliptic function and Chebyshev response are demonstrated. There is good agreement between experimental and full-wave electromagnetic (EM) simulation results.

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Design of CMOS Multifunction ICs for X-band Phased Array Systems (CMOS 공정 기반의 X-대역 위상 배열 시스템용 다기능 집적 회로 설계)

  • Ku, Bon-Hyun;Hong, Song-Cheol
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.12
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    • pp.6-13
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    • 2009
  • For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.