• Communications for Statistical Applications and Methods
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• 제25권4호
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• pp.373-383
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• 2018

The spatial scan statistic is a widely used method to detect spatial clusters. The method imposes a large number of scanning windows with pre-defined shapes and varying sizes on the entire study region. The likelihood ratio test statistic comparing inside versus outside each window is then calculated and the window with the maximum value of test statistic becomes the most likely cluster. The results of cluster detection respond sensitively to the shape and the maximum size of scanning windows. The shape of scanning window has been extensively studied; however, there has been relatively little attention on the maximum scanning window size (MSWS) or maximum reported cluster size (MRCS). The Gini coefficient has recently been proposed by Han et al. (International Journal of Health Geographics, 15, 27, 2016) as a powerful tool to determine the optimal value of MRCS for the Poisson-based spatial scan statistic. In this paper, we apply the Gini coefficient to normal-based spatial scan statistics. Through a simulation study, we evaluate the performance of the proposed method. We illustrate the method using a real data example of female colorectal cancer incidence rates in South Korea for the year 2009.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.