• Journal of the Korean Society for Precision Engineering
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• v.18 no.7
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• pp.106-111
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• 2001

This study reports the grinding characteristics of quartz. Grinding experiments were performed at various grinding conditions including wheel mesh, table speed and depth of cut. The grinding forces and specific grinding energies were measured. Surface roughness was also measured with tracer and the ground surfaces were observed with SEM. A new parameter SDR(Surface roughness Direction Ratio) is proposed to characterize the grinding mechanisms of quartz. A set of experiments was performed to verify the effectiveness of the suggested parameter. The experimental results indicate that the ductile mode is the dominant material removal mode at the grinding conditions which show the higher value of SDR whereas the material is removed by brittle fracture in a lower value of SDR value increases with wheel mesh size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.23-23
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• 2010

Because of power consumption increase, global warming, and limitation of installation, not only high reliability and interruption capability but also compact and light power apparatuses are needed. In this paper, various models that short and long gap distance were used to analyze E field of each model. Calculation value was estimated of flashover position. As a result, short and long gap distance that vacuum interrupter inner between move electrode and fix electrode not coincided flashover position of each model. short gap distance estimated flashover position at electrode edge. but long gap distance model confirmed $E_{max}$ value at center shield. in this paper was compared electric field value. and estimated of flashover position from electric field calculation.

• Transactions of the Korean Society of Mechanical Engineers
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• v.8 no.5
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• pp.469-475
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• 1984

In dual phase steel composed of martensite and ferrite which are different in deformation behavior, the quantitative estimation of fracture toughness is investigated by the R-curve method and the stretched zone method of JSME Sool. In the homogeneous material J$_{IC}$ value measured by the R-curve method and the stretched zone method are almost equivalent each other, but in the inhomogeneous material J$_{IC}$ value by the stretched zone method is overestimated than that by the R-curve method. Such a overestimation for the J$_{IC}$ is due to the continuous plastic blunting of ferrite after the stretched zone width in martensite reached critical value which overmeasures the critical stretched zone width.width.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.127-128
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• 2007

To investigate mechanical property on the low temperature plate weld metal, the two different plates of the same steel grade were welded and evaluated on the multiple pass welds and both side one run welds with different Mo contents welding consumables. The results are summarized as follows; 1) Welds made by no Mo containing wire showed very low impact values for type of material company. 2) Welds made by 0.25%Mo containing wire showed good impact value regardless of both side one run welds and multiple pass welds. 3) Welds made by 0.5%Mo containing wire showed good impact value for both side one run welds, while it was not acceptable value for multiple pass welds.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.486-488
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• 1987

Studine the characteristic or C.T.I affectine on the tracking failure when interface active materials are diffused into the phenolic resin. we conclude as follow: 1) As the density of $NH_4Cl$ increase the quality or sludge increase the value of C.T.I decreases. 2) The materal of ion absorption can make the period of sludge metallic matal generation delay more than times and the value of C.T.I increase. 3) By addition of interface active material that makes forming period delay, the starting voltage of corona blackdown id delayed and the value of C.T.I is increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.7-10
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• 2002

We designed the flyback planar transformer, which had 8W capacity, with 70V input voltage and 8.2V output voltage for the establishment of design method and the confirmation of application possibility. The numerical value of inductance measured under the switching frequency of 120 kHz was 1650 ${\mu}H$, which was the inductance efficiency of 85~87% against theoretical value. The A.C. resistance of primary and secondary coil was 4.2 ${\Omega}$ and 0.25 ${\Omega}$ respectively. On the other hand, the quality factor for each wound numbers showed quite a high value of 158 and 75 respectively. And the Coupling Factor was 0.96~0.97 under 120 kHz switching frequency. And the shape of the output wave of the planar transformer at 70V input voltage was a stable square wave.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.50-54
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• 2002

Influences of bending strain on the critical current ($I_c$) in Ag-sheathed Bi-2223 superconducting tapes at 77K were investigated. The effect of bending mode on the bending strain characteristics was discussed in viewpoints of sample geometry, n-value and damage morphology. Especially, in this paper, we reported the $I_c$ behavior in Ag alloy sheathed Bi-2223 multifilamentary superconducting tapes under hard bending. As a result, $I_c$ degradation behavior of the hard bending appeared remarkably than the case of easy bending, but it did not influence greatly on the n-value.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.322-325
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• 2012

Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.