• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.184-187
• /
• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 한국전기전자재료학회논문지
• /
• 제20권11호
• /
• pp.977-982
• /
• 2007

The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

• 대한기계학회논문집
• /
• 제18권8호
• /
• pp.2073-2080
• /
• 1994

In this paper, a model of material removal in abrasive water jet machining of brittle material is developed, and experimentally evaluated. Abrasive water jet machining proved to yield better material removal rate than other machining techniques for hard and brittle material (alumina ceramics). It was also found that large scale fracture may develop at the exit of the jet from the material. The fracture size was predicted as a function of water jet pressure and size of the hole. Finally, the feasibility of using acoustic emission signals for in-process monitoring of the abrasive water jet machining process is investigated.

• 산업기술연구
• /
• 제30권A호
• /
• pp.127-132
• /
• 2010

We analyzed the effects of several process variables on the $SO_2$ removal and particle growth by the dielectric barrier discharge - photocatalysts hybrid process. In this process, $SO_2$ was converted into the ammonium sulfate ($(NH_4)_2SO_4$) particles. The size and crystallinity of ammonium sulfate particles were examined by using TEM and XRD analysis. The dielectric barrier discharge reactor consisted of two zones: the first is for plasma generation and the second is for ammonium sulfate particles formation and growth. The first zone of reactor was filled with glass beads as a dielectric material. To enhance $SO_2$ removal process, the $TiO_2$ photocatalysts were coated on glass beads by dip-coating method. As the voltage applied to the plasma reactor or the pulse frequency of applied voltage increases, the $SO_2$ removal efficiency increases. Also as the initial concentration of $SO_2$ decreases or as the residence time increases, the $SO_2$ removal efficiency increases. $(NH_4)_2SO_4$ particles continue to grow by particle coagulation and surface reaction, moving inside the reactor. Larger particles in site are produced according to the increase of residence time or $SO_2$ concentrations.

• 한국전기전자재료학회논문지
• /
• 제17권10호
• /
• pp.1041-1048
• /
• 2004

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.555-556
• /
• 2007

Through the single head kinematics, sliding distance is a movement of a pad within wafer. The sliding distance is very important to frictional heat, material removal, and so on. A Temperature distribution is similar to sliding distance. But is not same. Because of complex process factor in CMP. A platen velocity is a dominant factor in a temperature and material removal. WIWNU is low in head faster condition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.88-89
• /
• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• 환경위생공학
• /
• 제13권2호
• /
• pp.88-94
• /
• 1998

This study was investigated the application of biofiltration using cometabolic process to remediate gaseous toluene that are highly recalcitrant to adsorption, absorption and biodegradation. The investigation was conducted using specially built steel columns packed with granular activated carbon for removal of toluene and G.A.C was also coated with Pseudomonas putida microorganisms by addition of KH$_{2}$PO$_{4}$. The biofilter unit was operated in the condition of dry and 27.5% moisture content at gas loading rate of 12.5 l/min. Gaseous toluene taken from tedlar bag was analyzed by the use of G.C. equipped with F.I.D. detector. The removal efficiency of gaseous toluene was 85% at average inlet concentration of 970 ppm during dry operating condition. For gaseous toluene, 91% removal efficient was obtained at the filter material with moisture content and 97% removal efficiency was obtained with Pseudomonas putida microorganisms at gas loading rate of 12.5 l/min.

• Bulletin of the Korean Chemical Society
• /
• 제35권9호
• /
• pp.2711-2716
• /
• 2014

The high content of potassium in molasses limits its usage as a raw material for stock feed. Moreover, its high viscosity makes it difficult to develop an efficient removal process. In this study, ion exchange and solvent extraction experiments have been performed to investigate the removal of potassium from a mixture of molasses with water. Cationic exchange resins (AG50W-X8 and Diphonix) showed a high loading percentage of potassium but the occurrence of breakthrough in few bed volumes was a drawback to the industrial application. Among the cationic extractants (D2EHPA, PC 88A, Cyanex 272) tested in this study, saponified PC 88A was found to be the best extractant for the removal of potassium. Batch simulation studies on a three stage counter current extraction confirmed that 85% of potassium was removed from 50 wt % molasses solution in water by using saponifed PC 88A.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.46-49
• /
• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.