• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.366-371
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• 2009

The authors have published several technical reports on the deterioration of conductor due to forest fire in series so far. This is because even we have been experiencing hundreds of forest fires every year, no systematic research on conductor which is very vulnerable to fire have been fulfilled. This paper describes the sag-tension behavior of conductor under loading current normally when only partial area of a long conductor is exposed to fire. Temperatures of Overhead Conductor were different with measurement position. When the partial area of conductor was heated up to $500^{\circ}C$, 20 % of permanent tension loss was observed. This results in the increase of sag of 1.5 m when span is 300 m. The other results will be presented in the text.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1992.04a
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• pp.79-83
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• 1992

According to the variation of hydrostatic pressure on the central axis of deformable material, the V-shaped central bursting defect may be created on extrusion or drawing processes. The process factors whichaffect the generation of defects are die semi-angle, reduction ratio of cross-sectional area, friction factor, material properties and so on. The combination of these factors can determine the prossibility of defect creation and the shape of various round holes which have been created inside already. By the rigid plastic finite element method, this paper describes the observations of change in shape of a round hole with process conditions suchas die semi-angle, reduction ratio of cross-sectional area and friction factorat the unsteady state of axi-symmetrical extrusion process when the round hole is alreadyexisted inside the original billet, and also, the effects of process factors are investigated to prevent the possible defects.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.125-133
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• 1995

Rene80 superalloy was liquid phase diffusion bonded by using pure boron (B) as an insert material. As a basic study for the possibility of practical application of this bonding method, hardness and high temperature tensile strength of the bonded joint and metallurgical analysis were investigated. As experimental results, hardness of the bonded joint was homogenized after bonding and the tensile strength at 1144K was obtained to 90% of that of base metal. But there were some problems to be improved also, that means the joint was hardened after bonding due to increase of B content and elongation was much lower than that of base metal. Flat area and (Mo, Cr, W) boride, which should be harmful for bonding strength, were observed on the fractured surface of the tensile tested specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.197-202
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• 2008

In this paper, we proposed an analytical model for TFT which has series of the polycrystalline structures. An average speed is defined as carrier speed by the electric field. The effective square is suggested as the area of grain without depletion for the changed grain size. First, physical parameters such as grain size, channel lenght and trap density, have been changed to prove the validity of the average speed model and the value of the effective square has been estimated through drain-source current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.287-291
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• 2006

This paper describes mechanical and electric properties of ACSR $410\;mm^2$ conductor from many of older overhead conductor. Samples of conductors itemized two division according to operation sector, green area, salt and pollution area. Samples of conductors operated various environment conditions have undergone laboratory metallurigical investigation and tensile strength torsional ductility and electrical performance. The steel core were found to have retained their original properties to a large degree in both tensile strength and the number of turns to failure. On the other hand the aluminum conductor showed reductions in tensile strength. To determine the remaining useful life of aged conductor, an unacceptable deterioration level has to established for each diagnostic procedure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.38-42
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• 1996

The pressure-area isotherm of monolayer at the air-water interface were obtained and the LB films were fabricated onto a quartz slides and quartz crystal by conventional Langmuir-Blodggett(LB) method. The UV absorption spectra of Langmuir-Blodggett(LB) film on quartz slides and spectrum of monolayer formed on quartz crystal have been measured. The photoisomerization of the long-chain fatty avid containing azobenzene were obtained by the application of UV and visible light. The reversibility of photoisomerization were more clear difference when the number of C$\_$n/ increased. At the pressure-area isotherms, the value of surface pressure increment were decreased when the number of C$\_$n/ increased, A surface pressure of 20mN/m was obtained as a proper one for a film deposition. The photoisomerization at LB films were also obtained by application of UV and visible light. So the LB film of long-chain fatty acid containing azobenzene has possibility to being applies to functional molecular devices such as photomemory and light switching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.409-412
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• 1996

In this paper, the response characteristics of organic gases were investigated by using quartz crystal microbalance(Q.C.M) with different polymeric sensitive materials. The new linear parameter was discussed in order to develope gas sensing system using neural network and pattern recognition. We analyzed the response characteristics by the area of resonant frequency shift of quartz crystal, which mean affinities of organic gases for polymeric sensitive firm. The experimental results shows that the parameter made by the area of frequency shift which was linear with injection amount of organic gases has possibility to be used for pattern recognition and neural network. And they have different normalized pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.26-28
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• 1996

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.