• 대한의용생체공학회:의공학회지
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• 제43권3호
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• pp.131-135
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• 2022

Due to COVID-19, Correct method of wearing mask is important to prevent COVID-19 and the other respiratory tract infections. And the deep learning technology in the image processing has been developed. The purpose of this study is to create the type of mask wearing dataset for deep learning models and select the deep learning model to detect the wearing mask correctly. The Image dataset is the 2,296 images acquired using a web crawler. Deep learning classification models provided by tensorflow are used to validate the dataset. And Object detection deep learning model YOLOs are used to select the detection deep learning model to detect the wearing mask correctly. In this process, this paper proposes to validate the type of mask wearing datasets and YOLOv5 is the effective model to detect the type of mask wearing. The experimental results show that reliable dataset is acquired and the YOLOv5 model effectively recognize type of mask wearing.

• 한국재료학회지
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• 제28권4호
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.901-907
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• 2000

As the minimum feature size for making ULSI approaches the wavelength of light source in optical lithography, the aerial image is so hardly distorted because of the optical proximity effect that the accurate mask image reconstruction on wafer surface is almost impossible. We applied the Optical Proximity Correction(OPC) on isolated patterns assuming Attenuated Phase Shift Mask(APSM) as well as binary mask, to correct the widening of isolated patterns. In this study, we found that applying OPC to APSM shows much better improvement not only in enhancing the resolution and fidelity of t도 images but also in enhancing the process margin than applying OPC to the binary mask. Also, we propose the OPC method of APSM for isolated patterns, the size of which is less than the wavelength of the ArF excimer laser. Finally, we predicted the resolution limit of optical lithography through the aerial image simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• 대한기계학회논문집B
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• 제36권10호
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• pp.1011-1017
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• 2012

본 논문에서는 롤타입 마스크를 사용한 마이크로/나노 구조 제작용 광학 리소그래피 방법을 소개한다. 이 생산 방법은 다양한 목표 해상도에 따라 위상지연 리소그래피방법과 포토리소그래피로 나뉜다. 사용되는 빛의 파장대보다 작은 해상도를 갖는 패턴을 제작하기 위해서 실린더 형태의 위상지연 마스크를 활용한 근거리 노광 방식을 사용한다. 또한 필름 형태의 금속 마스크를 써서 포토리소그래피를 연속방식으로 수행하였는데 이 방식은 실린더 마스크의 회전수를 조절함으로써 노광 결과 패턴의 주기를 실시간으로 조절할 수 있다. 이 기술의 응용으로 금속 그물패턴으로 만들어진 100 $mm^2$ 넓이의 투명전극을 제작하였다.

• 반도체디스플레이기술학회지
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• 제5권4호
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• pp.11-15
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• 2006

Expose equipment system that is used for manufacturing process of Flat Panel Display, is most important equipment in whole process. Expose equipment that is for making pattern of mask on substrate, consists of optical part, stage part and transport part. The stage is an important part that aligns mask and substrate for delivering pattern of mask to substrate exactly. In this paper, control system of expose stage that is able to use mask and substrate of diverse size, with PC controller using GUI interface instead of PLC control system. The existing PLC control system does not have the suitable structure for using mask of diverse size. GUI interface integration control system is based on PC. So it has the advantage of convenient use and active operation. We embodied PLC control system in integration control system based on PC, and verified utility possibility through the standard test course.

• 소성∙가공
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• 제13권3호
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• International Journal of Advanced Culture Technology
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• 제6권2호
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• pp.123-128
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• 2018

Learning data is composed of 100 characters with 10 different fonts, and test data is composed of 10 characters with a new font that is not used for the learning data. In order to consider the variety of learning data with several different fonts, 10 learning masks are constructed by accumulating pixel values of same characters with 10 different fonts. This process eliminates minute difference of characters with different fonts. After finding maximum values of learning masks, test data is expanded by multiplying these maximum values to the test data. The algorithm calculates sum of differences of two corresponding pixel values of the expanded test data and the learning masks. The learning mask with the smallest value among these 10 calculated sums is selected as the result of the recognition process for the test data. The proposed algorithm can recognize various types of fonts, and the learning data can be modified easily by adding a new font. Also, the recognition process is easy to understand, and the algorithm makes satisfactory results for character recognition.

• International Journal of Precision Engineering and Manufacturing
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• 제4권1호
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• pp.23-29
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• 2003

Stencil is used normally as a mask for solder pasting on pad of a printed circuit board (PCB). The objective of this study is to develop a stencil cutting system and determine the optimal conditions to make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse duration on the cut edge quality were investigated. In order to analyze the cut surface characteristics (roughness, kerfwidth, dross) optical microscopy, SEM microscopy and roughness measurements were used. As a result, the optimal conditions of cutting process parameters were determined, and the practical feasibility of the proposed system was also examined by using a commercial Gerber file for PCB stencil manufacturing.