• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.35-39
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• 2002

We have simulated and laid out a Single Flux Quantum(SFQ) AND gate for Arithmetic Logic Unit by using XIC, WRspice and Lmeter. SFQ AND gate circuit is a combination of two D Flip-Flop. D Flip-Flop and dc SQUID are the similar shape form the fact that it has the loop inductor and two Josephson junction We obtained perating margins and accomplished layout of the AND gate. We got the margin of $\pm$38%. over. After layout, we drew mask for fabrication of SFQ AND sate. This mask was included AND gate, dcsfq, sfqdc, rs flip-flop and jtl.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.809-809
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• 2013

We report a new method for highly controllable local patterning of a hydrogel on microfabricated cantilevers and fabrication of all hydrogel microcantilevers. We constructed a dynamic mask based photolithography setup using a commercial beam projector, a 3-axis microstage and other optical components. Dynamic masks generated from the beam projector controlled the shape, size, and position of hydrogel patterns while the 3-axis microstage mainly controlled the thickness of hydrogel patterns and hydrogel microcantilevers. Using the constructed setup, polyethyleneglycol diacrylate (PEGDA) was patterned on microfabricated cantilevers in a highly controlled manner. Currently, the smallest PEGDA patternable is a 5-${\mu}m$-diameter circle with a thickness of ~$10{\mu}m$. To confirm thicknesses of patterned PEGDAs on silicon microcantilevers, resonance frequencies of microcantilevers were measured before and after each PEGDA patterning. Thicknesses extracted from resonance measurements showed good agreement with measurements using an optical microscope. In addition, PEGDA microcantilevers with various dimensions and thicknesses were fabricated on glass and silicon substrates. Surfaces of fabricated all hydrogel microcantilevers were flat enough to facilitate other post processing and to be used for various sensing applications.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.3 s.180
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• pp.56-60
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• 2006

A high-resolution shadow mask, or called a nanostencil was fabricated for high resolution lithography. This high-resolution shadowmask was fabricated by a combination or MEMS processes and focused ion beam (FIB) milling. 500 nm thick and $2{\times}2mm$ large membranes wore made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 70 nm could be made into the membrane. By local deposition through the apertures of nanostencil, nanoscale patterns down to 70 nm could be achieved.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.60-67
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• 1999

Micro-fabrication techniques such as lithography and LIGA processes usually require large investment and are suitable for mass production. Therefore, there is a need for a new micro-fabrication technique that is flexible and more cost effective. In this paper a novel, economical and flexible method of producing micro-pattern on silicon wafer is presented. This method relies on selective removal of mask by mechanical cutting. Then micro-pattern is produced by chemical etching. V-shaped grooved of about 3 ${\mu}m$ wide and 2 ${\mu}m$ deep has been made on ${SiO_2}m$ coated silicon wafer with this method. This method may be utilized for making microstructures in MEMS application at low cost.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• Journal of Magnetics
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• v.12 no.1
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• Journal of the Optical Society of Korea
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• v.6 no.4
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.503-504
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.663-664
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• 2007