• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 대한전기학회논문지:전력기술부문A
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• 제53권1호
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• pp.31-37
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• 2004

In this paper, the analysis result of the switching surge in substation including GIS(Gas Insulated Switchgear) has been described using the EMTP(Electro Magnetic Transient Program) program. After performing the modeling of the input data, we have reviewed the energization overvoltages of GCB(Gas Circuit Breaker) without closing resistor in 345kV network, according to the conditions of simultaneously operating switch and statistically operating switch. Firstly, it can be known that the energization overvoltage of single line is higher than that of parallel energized line. Secondly, the maximum energization overvoltage obtained in statistics switch is higher than one in simultaneous switch. From these results, it can be known that the phase-to-earth energization overvoltages of $\alpha$-$\beta$ section are less than 2.2 p.u when closing resistor is eliminated. Therefore, it is possible to consider the circuit breaker eliminated the closing resistor in $\alpha$-$\beta$ section.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2000년도 KIASC Conference 2000 / 2000년도 학술대회 논문집
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• pp.173-176
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• 2000

MRI magnet has generally multi-section coil configurations to generate highly homogeneous magnetic field. Each coil is bridged by a shunt resistor to protect the superconducting magnet during quench. In order to optimize the shunt resistor, self inductance of each coil and mutual inductances between coils should be determined beforehand. Therefore, we calculated the self and the mutual inductances of MRI magnet with OPERA program for electromagnetic analysis.

• Journal of Power Electronics
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• 제19권3호
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• pp.827-834
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• 2019

Wireless power transfer via coupled magnetic resonances has been a hot research topic in recent years. In addition, the number of related devices has also been increasing. However, reverse signals transfer is often required in addition to wireless power transfer. The structure of the circuit for a wireless power transfer system via coupled magnetic resonances is analyzed. The advantages and disadvantages of both parallel compensation and series compensation are listed. Then the compensation characteristics of the inductor, capacitor and resistor were studied and an appropriate compensation method was selected. The reverse signals can be transferred by controlling the compensation of the resistor. In addition, it can be demodulated by extracting the change of the primary current. A 3.3 MHz resonant frequency with a 100 kHz reverse signals transfer system platform was established in the laboratory. Experimental results demonstrate that wireless power and reverse signals can be transferred synchronously.

• 전기학회논문지
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• 제60권3호
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• pp.606-611
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• 2011

This paper proposes a correction method concerning the inclination error and non-horizontal error of magnetic compass when magnetic compass is vibrated. This system used the 2-axis variable resistance and pendulum. A pendulum hanging from the 2-axis variable resistance of this system is always maintain the horizontal because of gravity. but these data had some intrinsic error. So we used the low pass filter to solve this problem. So this system can get the accurate azimuth of magnetic compass. In conclusion, These results demonstrate convincingly by applied algorithm of experiment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.166-169
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• 1990

The purpose of the circuit breaker on power system is to disconnect the faulty part from the system and to maintain the integrity of the system. With switching overvoltages are generated. When the system voltages become higher, switching overvoltage is important factor in insulation co-ordination. Since the no-load reclosing overvoltage with inductive source is severe, this paper deals with the reclosing overvoltage and the effect of closing resistor. This reclosing overvoltage of 27-bus model system with and without closing resistor is analyzed by using EMTP (Electro-Magnetic Transients Program) for both deterministic and Stochastic model.