• Title/Summary/Keyword: magnetic film

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The Improvement of Magnetic Properties of CoCr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 CoCr박막의 자기적 특성 개선에 관한 연구)

  • 공석현;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.419-422
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    • 1999
  • We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

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Thickness Dependence of the Crystallization of FePt/MgO(001) Magnetic Thin Films (FePt/MgO(001) 자성박막 결정화의 두께의존성)

  • Jeung, Ji-Wook;Yi, Min-Soo;Cho, Tae-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.153-158
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    • 2010
  • The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

SINTERED $Al_{2}O_{3}$-TiC SUBSTRATE FOR THIN FILM MAGNETIC HEAD

  • Nakano, Osamu;Hirayama, Takasi
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 1998.04b
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    • pp.6-6
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    • 1998
  • In 1957, the first magnetic disk drive compatible with a movable head was introduced as an external file memory device for computer system. Since then, magnetic disks have been improved by increasing the recording density, which has brought about the development of a high performance thin film magnetic head. The thin film magnetic head has a magnetic circuit on a ceramic substrate using IC technology. The physical property of the substrate material is very important because it influences the tribology of head/disk interface and also manufacturing process of the head. $Al_{2}O_{3}$-TiC ceramics, so called ALTIC, is known to be one of the best substrate materials which satisfies this property requirement. Even though the head is not in direct contact with the disk, frequent instantaneous contacts are unavoidable due to its high rotating speed and the close gap between them. This may cause damage in the magnetic recording media and, thus, it is very important that the magnetic head has a good wear resistance. $Al_{2}O_{3}$-TiC ceramics has an excellent tribological property in head/disk interface. Manufacturing process of thin film head is similar to that of IC, which requires extremely smooth and flat surface of the substrate. The substrate must be readily sliced into the heads without chipping. $Al_{2}O_{3}$-TiC ceramics has excellent machineability and mechanical properties. $Al_{2}O_{3}$-TiC ceramics was first developed at Nippon Tungsten Co. as cutting tool materials in 1968, which was further developed to be used as the substrate materials for thin film head in collaboration with Sumitomo Special Metals Co., Ltd. in 1981. Today, we supply more than 60% of the substrates for thin film head market in the world. In this paper, we would like to present the sintering process of $Al_{2}O_{3}$-TiC ceramics and its property in detail.

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Effect of Isotropic Strain on Properties of Amorphous Magnetic films (아몰퍼스자성박막의 특성에 미치는 등방성 스트레인의 영향)

  • 신광호;김흥근;김영학;사공건
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.478-480
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    • 2001
  • Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

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A Study of the Hull Form of Oil Recovery Vessel by Using Magnetic Fluid (자성유체를 이용한 유회수선박의 선형연구)

  • 이귀주;박영식;김경화;노준혁;장희문
    • Journal of Ocean Engineering and Technology
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    • v.15 no.2
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    • pp.1-5
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    • 2001
  • A study on the new active type oil-water separation system including the oil-water separation system of magnetic film was carried out. Separation system is composed of several active types of circulating oil separation steps and one magnetic film separation step at final stage. At the magnetic separation step, ferrofluid easily forms a weak magnetic mixture with oil, which is from the water by magnetic field gradient. The vessel has been designed to run at the maximum speed of 25 knots. And two typical forms of SWATH and Catamaran have been studied as a new type of oil recovery vessel.

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Circularly polarized soft X-ray generation by Co/Pt thin film polarizer with perpendicular magnetic anisotropy

  • Lee, Sang-Hyuk;Huang, Lin;Lee, Jae-Woong;Kim, Namdong;Shin, Hyun-Joon;Jeong, Jong-Ryul;Hwang, Chanyong;Kim, Dong-Hyun
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1196-1200
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    • 2018
  • We have experimentally demonstrated circular polarization generation from linear polarized soft X-ray at synchrotron by adopting a thin magnetic film polarizer. Polarizer is composed of Co/Pt multilayer with a perpendicular magnetic anisotropy, which allows us to easily accommodate without needing any tilting angle into the measurement setup since the circular polarization is generated for the X-ray with normal incidence and transmission. Generated circular polarization is examined by observing magnetic domain features based on the X-ray magnetic circular dichroism, where~11% of circular component is estimated compared to the case of full circular polarization.

Effects of Alternating Magnetic Field Assisted Annealing of Pentacene Film for Organic Thin Film Transistor Applications

  • Park, Jae-Hoon;Choi, Jong-Sun
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.1
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    • pp.32-35
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    • 2007
  • In this article, a novel annealing technique using alternating magnetic field (AMF) is adopted to improve the electrical characteristics of pentacene film, thereby enhancing the performance of pentacene-based organic thin film transistors (OTFTs). According to the investigation results, the electrical conductivity in the pentacene film could be increased from 0.32 to 1.18 S/cm by annealing the pentacene film using AMF. And also, OTFTs with the pentacene film annealed by AMF exhibited an improved performance compared to the device without annealing. These results suggest that an annealing using AMF can be an effective method to improve the performance of devices based on organic semiconductors.

Bias Field Effect of SmCo Films on Soft Magnetic Properties of CoZrNb Films (SmCo박막의 바이어스자계가 CoZrNb박막의 연자성특성에 미치는 효과)

  • Shin, K.H.;Kim, Y.H.
    • Journal of the Korean Magnetics Society
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    • v.13 no.5
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    • pp.198-203
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    • 2003
  • To investigate whether the use of hard magnetic film is available to generate bias magnetic field for a magnetoimpedance sensor, the magnetic properties of SmCo hard magnetic films were investigated as a function of their compositions. The saturation magnetization decreased with Sm content increasing in SmCo films. And, the coercive force increased in the extent of Sm content of 28 at%, but decreased as Sm content increased moreover. The bias field effect of SmCo film to amorphous CoZrNb film was investigated with the magnetization corves, permeabilities, and magnetic domain structures of SmCo/CoZrNb multilayers. The bias field of about 60 Oe was observed in the film with 3 mm ${\times}$ 0.5 mm, which can be constructed as a MI sensor, and this result strongly indicates that the bias field generated from a hard magnetic film is adequate to enhance the sensitivity of a MI sensor with hard/soft magnetic multilayer structure.

Magnetic Field Dependent Characteristics of Al-doped ZnO by High Power Impulse Magnetron Sputtering (HIPIMS) (자장 구조 변화에 따른 High Power Impulse Magnetron Sputtering (HIPIMS)에서 Al-doped ZnO 박막 증착 특성)

  • Park, Dong-Hee;Yang, Jeong-Do;Choi, Ji-Won;Son, Young-Jin;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.629-635
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    • 2010
  • Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

The Characteristic Analysis of Thin Film Sensor using The Membrane (Membrane을 이용한 박막센서 특성 분석)

  • 이순우;김상훈;안진호
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.3
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    • pp.37-41
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    • 2002
  • In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to $Si_xN_y$ and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane, $Si_xN_y$ thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on $Si_xN_y$, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.

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