• Journal of Magnetics
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• 제22권1호
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• pp.49-54
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• 2017

The significant reduction of the image quality caused by the magnetic field of samples is a major problem affecting the application of SEM (scanning electron microscopy) in the analysis of electronic devices. The main reason for this is that the electron trajectory is deflected by the Lorentz force. The usual solution to this problem is degaussing the sample at high temperatures. However, due to the poor heat resistance of some electronic components, it is imperative to find a method that can reduce the impact of magnetic field on the image quality and is straightforward and easy to operate without destroying the sample. In this paper, the influence of different magnetic field directions on the imaging quality was discussed by combining the experiment and software simulation. The principle of the method was studied, and the best observation direction was obtained.

• 대한치과교정학회지
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• 제27권4호
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• pp.623-632
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• 1997

정자기장과 맥동전자기장이 배양 조골세포에 미치는 영향을 알아보고자 MC3T3-E1세포를 각 자기장하에서 배양하여 ALP활성도와 DNA의 합성능을 평가한 결과 다음과 같은 결과를 얻었다. 1. 정자기장을 가한 군에서 자석을 1,2,3개 가한 군($51\~114.8mT$)에서 대조군에 비하여 ALP의 유의성있는 증가가 나타났으며(P<0.05), 자석을 4개 5개 가한 군(150mT)에서는 대조군에 비하여 ALP활성도에 차이가 나타나지 않았다. 2. 맥동성 전자기장에서는 대조군에 비하여 ALP활성도에 유의한 차이가 나타나지 않았다. 3. DNA합성능은 정자기장과 맥동성 전자기장을 가한 군 모두 대조군에 비하여 유의한 차이가 나타나지 않았다. 이상의 결과 정자기장에 의한 교정력은 골세포의 대사과정에 변화를 줄 수 있으므로, 치아이동에 어떠한 영항을 줄 수 있을 것으로 사료된다.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1655-1662
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• 2018

This paper studies the magnetic fields between the power lines which are finite length and other ones which are infinitely long around the first tower in the proximity of the power transformers. They will be used as a source of disturbance applied to the power line. The method applied in this study was gradual; develop the theoretical formulation of the magnetic fields of these lines which are finite length and other ones which are infinitely long, examine the effects of different couplings between the different neighboring lines and the distribution transformers on behavior of magnetic fields. The method also focused on the experimental results analyzing the magnetic fields which will be used as a source applied to the auditory implants EMC. The theoretical and experimental results were compared and discussed for three power lines (90kV, 150kV and 225kV) near the power station, and it proved the effect of these substations on the simulated and measured results of the magnetic field. The maximum intensities of magnetic fields measured at the height of 1m from the ground for the circuit of three lines close to each substation were significantly lower than the ICNIRP reference levels for occupational and non occupational exposures.

• 대한의용생체공학회:의공학회지
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• 제23권4호
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• pp.287-293
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• 2002

시변 자계를 이용하여 비접촉적인 방법으로 신경을 자극하기 위해서는 신경자극코일에 대용량 전류 펄스를 순시적으로 인가해야만 한다. 신경자극코일에 인가하는 전류 펄스의 주파수를 증가할수록 신경자극코일에 전력을 공급하는 전력공급기의 용량이 커지게 되고 신경자극코일에 발생하는 열량도 커지는 문제가 발생한다. 본 논문에서는 이러한 문제를 완화하기 위해 새로운 형태의 신경자극코일을 제안하였다. 신경자극코일에 강자성체 구조물을 부착하여 자계 거울 효과를 내게 하면 신경자극코일의 효율이 증가하게 된다. 다양한 형태의 신경자극코일에 대해 자계 거울 효과를 유한요소법으로 분석하였고 몇 종류의 신경자극코일에 대해 실험한 결과를 제시하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.215-220
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• 1999

$SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

• Advances in materials Research
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• 제2권4호
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• pp.209-219
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• 2013

We have described primary studies on conductivity and molecular weight of polyaniline separately in the electric and magnetic fields when it is used in a field effect experimental configuration. We report further studies on doped in-situ deposited polyaniline. First we have chemically synthesized polyaniline by ammonium peroxodisulfate in acidic aques and organic solutions at different times. Then we measured mass and conductivity and obtained the best time of polymerizations. In continue, we repeated these reactions separately under different electric and magnetic fields in constant time and measured mass and conductivity. The polyaniline is characterized by gel permeation chromatography (GPC), UV-Visible spectroscopy and electrical conductivity. High molecular weight polyanilines are synthesized under electric field, $M_w$ = 520000-680000 g/mol, with $M_w/M_n$ = 2-2.5. The UV-Visible spectra of polyanilines oxidized by ammonium peroxodisulfate and protonated with dodecylbenzenesulfonic acid (PANi-DBSA), in N-methylpyrolidone (NMP), show a smeared polaron peak shifted into the visible. Electrical conductivity of polyanilines has been studied by four-probe method. The conductivity of the films of emeraldine protonated by DBSA cast from NMP are higher than 500 and 25 S/cm under 10 KV/m of potential) electric field and 0.1 T magnetic field, respectively. It shows an enhanced resistance to ageing too. By the next steps, we carried chemical polymerization at the best electric and magnetic fields at different times. Finally, resulted in finding the best time and amount of the fields. The longer polymerization time and the higher magnetic field can lead to degradation of polyaniline films and decrease conductivity and molecular mass.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 춘계연구발표회 논문개요집
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• pp.70-71
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• 1997

• 대한자기공명의과학회:학술대회논문집
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• 대한자기공명의과학회 1997년도 제2차 추계학술대회 초록집
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• pp.13-13
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• 1997

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.