• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.10-16
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• 2003

To analyze the effects of the air-bridge parasitic capacitances on the performance of coplanar waveguide pseudomorphic high electron mobility transistors (CPW PHEMTs), the gate-to-air-bridge ( $C_{ag}$ ) and the drain-to air-bridge ( $C_{ad}$ ) capacitances were taken into account plus the conventional pinched-off cold. FET circuit model. To examine the effects of the parasitic capacitances due to the air-bridges, a variety routing schemes for the air-bridge interconnection were adopted for fabricating the 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate length CPW HEMT's. According to air-bridge schemes, the $S_{21}$ gain is affected considerably. From the results of the fabricated CPW PHEMT, the $C_{ag}$ and $C_{ad}$ is one of the important factor of decreasing the gain of HEMTs.