• The Journal of the Acoustical Society of Korea
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• v.24 no.1
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• pp.38-42
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• 2005

CMOS analog lowpass filters using speech signal bandwidth for a Asymmetrical Digital Subscriver Line(ADSL) modem are presented. Designed active lowpass filters are composed of the CMOS complementary high-swing cascode stage which can increase transconductance of an active element. As a result, their cutoff frequency are 138kHz and 1,100kHz respectively. A low-voltage high-swing cascode integrator which improved on a gain and unit gain frequency used to design the filters. The designed filters are verified by HSPICE simulation with the $0.251{\mu}m\;CMOS\;n-well$ Parameter and a single 2.5V power supply.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.627-628
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• 2006

A low-voltage switched-capacitor $2^{nd}$-order $\Sigma\Delta$ modulator using full feed-forward is introduced. It has two advantages: the unity signal transfer function and reduced signal swings inside the $\Sigma\Delta$ loop. These features greatly relax the DC gain and output swing requirements for Op-Amp in the low-voltage $\Sigma\Delta$ modulator. Implemented by a 0.18-${\mu}m$ CMOS technology, the $\Sigma\Delta$ modulator satisfies performance requirements for WCDMA and CDMA2000 standards.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.76-83
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• 2007

This paper describes a low power ROM using single charge-sharing capacitor and hierarchical bit line (SCSC-ROM). The SCSC-ROM reduces the power consumption in bit lines. It lowers the swing voltage of bit lines to a very small voltage by using a charge-sharing technique with a single capacitor. It implements the capacitor with dummy bit lines to improve noise immunity and make easy to design. The hierarchical bit line further saves the power by reducing the capacitance in bit lines. The SCSC-ROM also reduces the power consumption in control unit and predecoder by using the hierarchical word line decoder. The simulation result shows that the SCSC-ROM with $4K{\times}32bits$consumes only 37% power of a conventional ROM. A SCSC-ROM chip is fabricated in a $0.25{\mu}m$ CMOS process. It consumes 8.2mW at 240MHz with 2.5V.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.165-168
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• 2002

As the demand for higher data-rate chip-to-chip communication such as memory-to-controller, processor-to-processor increases, low cost high-speed serial links\ulcorner become more attractive. This paper describes a 0.25-fm CMOS 1.6Gbps/pin 4-level transceiver using Stub Series Terminated Logic for high Bandwidth. For multi-gigabit/second application, the data rate is limited by Inter-Symbol Interference (ISI) caused by channel low pass effects, process-limited on-chip clock frequency, and serial link distance. The proposed transceiver uses multi-level signaling (4-level Pulse Amplitude Modulation) using push-pull type, double data rate and flash sampling. To reduce Process-Voltage-Temperature Variation and ISI including data dependency skew, the proposed high-speed calibration circuits with voltage swing controller, data linearity controller and slew rate controller maintains desirable output waveform and makes less sensitive output. In order to detect successfully the transmitted 1.6Gbps/pin 4-level data, the receiver is designed as simultaneous type with a kick - back noise-isolated reference voltage line structure and a 3-stage Gate-Isolated sense amplifier. The transceiver, which was fabricated using a 0.25 fm CMOS process, performs data rate of 1.6 ~ 2.0 Gbps/pin with a 400MHB internal clock, Stub Series Terminated Logic ever in 2.25 ~ 2.75V supply voltage. and occupied 500 * 6001m of area.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.621-623
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• 1998

We implemented PanelLlnk digital flat panel display transmitter supporting SXGA($1280{\times}1024$) resolution. It can transmit data through 10m cable at XGA($1024{\times}768$) resolution and through 7m cable at SXGA($1280{\times}1024$). We also found resistor value to get stable display image by low voltage differential signal swing control.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.62 no.2
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• pp.84-89
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• 2013

In this paper, we propose interface circuits for reducing power consumption and EMI when sequences of data from LCD controller to LCD driver IC by transmitting two bit data during one clock period. The proposed circuits are operated in current mode, which is different from conventional voltage-mode signaling techniques, and also employ threshold technique of Modified-LVDS(Low Voltage Differential Signaling) method. We have simulated the proposed circuits using H-SPICE tool for performance analysis of the proposed method. The simulation results show that the proposed circuits provide a faster transmission speed and stronger noise immunity than the conventional LVDS circuits. It might be suitable for the real-time transmission of huge image data in LCD system.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.