• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1303-1308
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• 2001

A series of catalysts, NiSO4/TiO2, for ethylene dimerization was prepared by the impregnation method using aqueous solution of nickel sulfate. On the basis of the results obtained from X-ray diffraction, the addition of NiSO4 shifted the transition of TiO2 from the anatase to the rutile phase toward higher temperatures due to the interaction between NiSO4 and TiO2. Nickel sulfate supported on titania was found to be very active even at room temperature. The high catalytic activity of NiSO4/TiO2 closely correlated with the increase of acidity and acid strength due to the addition of NiSO4. It is suggested that the active sites responsible for ethylene dimerization consist of low valent nickel, Ni+, with an acid.

• Korean Journal of Pharmacognosy
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• v.52 no.3
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• pp.157-162
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• 2021

The heat-mediated reflux apparatus extraction of Paeonia lactiflora Pall. has been widely used as a traditional extraction method. In this paper, the microwave apparatus extraction method of Paeonia Radix was performed and the active ingredients and functional constituents were compared with the reference extraction method. The most effective extraction condition of albiflorin using the microwave was 120℃ in 50% methanol, and paeoniflorin was maximally extracted at 60℃. The reduced level of paeoniflorin molecule at high-pressure and high-temperature extraction condition was caused by the molecular instability. Additionally, the microwave extraction of 50% methanol extracts at 150℃ showed the highest functional constituents determined by in vitro DPPH radical scavenging activity, polyphenol concentration, and tyrosinase inhibition assay. The microwave apparatus was adapted as a rapid, low-cost, and environmentally friendly method to extract active ingredients and the practical extraction conditions of Paeonia Radix can be used in industrial applications.

• Transactions of Materials Processing
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• v.15 no.3 s.84
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• pp.183-188
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• 2006

Heat transfer coefficients have great influence on finite element analysis results in elevated temperature forging processes. Experimentally calculated contact heat transfer coefficient is not suitable for one-time finite element analysis because analyzed temperature will be appeared to be too low. To get contact heat transfer coefficient for one-time finite element analysis, tool temperature in operation was measured with thermocouple and repeated finite element analysis was performed with experimentally calculated contact and cooling heat transfer coefficient. Surface temperature of active tool was obtained comparing measurement and analysis results. Contact heat transfer coefficient for one-time finite element analysis was achieved analyzing surface temperature between repeated finite element analysis and one-time finite element analysis results.

• Current Optics and Photonics
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• v.6 no.6
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• pp.583-589
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• 2022

Vanadium dioxide (VO₂) is a well-known material that undergoes insulator-to-metal phase transition near room temperature. Since the conductivity of VO₂ changes several orders of magnitude in the terahertz (THz) spectral range during the phase transition, VO₂-based active metamaterials have been extensively studied. Experimentally, it is reported that the metal nanostructures on the VO₂ thin film lowers the critical temperature significantly compared to the bare film. Here, we theoretically studied such early transition phenomena by developing an analytical model. Unlike experimental work that only measures transmission, we calculate the reflection and absorption and demonstrate that the role of absorption is quite different for bare and patterned samples; the absorption gradually increases for bare film during the phase transition, while an absorption peak is observed at the critical temperature for the metamaterials. In addition, we also discuss the gap width and VO₂ thickness effects on the transition temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.175-177
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• 2017

In order to reveal physical conditions of molecular gas in active galaxies (active galaxies mean both starbursts and AGNs in this paper), we carried out systematic observations (R = 19 ~ 120) of CO fundamental band at $4.7{\mu}m$ in absorption with AKARI. We also made follow-up CO absorption observations at higher spectral resolution (R = 5000 ~ 1000) with Subaru. Recently, Herschel made extensive observations of highly-excited CO lines in emission in the far-infrared. The two data sets (absorption and emission) sometimes provide us with apparently inconsistent results. One case is starburst galaxies: Subaru observations showed low temperature of molecular gas toward the starburst NGC 253, while Herschel detected highly excited CO lines in the starburst. This suggests that warm molecular clouds are more deeply embedded than newly formed star clusters. The other case is obscured AGNs; Herschel detected highly excited CO lines in emission in nearby AGNs, while AKARI and Subaru observations showed CO absorption only in some of the obscured AGNs. This could reflect the difference of nature of molecular tori in these AGNs. We propose the combination of the absorption and emission observations as an effective tool to reveal geometry of warm molecular clouds in active galaxies.

• International Journal of Industrial Entomology and Biomaterials
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• v.12 no.2
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• pp.51-56
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• 2006

Use of products containing phytoecdysteroid (PE) as active principle has become popular in prominent sericultural areas of India for hastening larval maturation events and synchronizing cocoon spinning activities as an obvious advantage is assured. At times, the present recommendation of administering PE at the onset of spinning results in peak labour requirement at odd hrs. To enable making recommendation for the use of PE on $multi{\times}bivoltine$ silkworm hybrids based on the climatic conditions prevailing in different areas especially with regard to temperature, the experiment was taken up to determine proper treatment times so that the induced spinning will be more orderly and the labour can be leveraged more efficiently. Different brackets of low ($18-22^{\circ}C$), medium ($24-28^{\circ}C$) and high ($29-32^{\circ}C$) temperature were simulated during the latter half of V larval instar and cocoon spinning. PE was administered to $multi{\times}bivoltine$ silkworm ($BL67{\times}CSR101$) hybrid batches as per the recommended dose at three different times viz., 10 am, 4 pm and 10 pm. Three replicates of 100 larvae were maintained for each treatment. Absolute controls were also maintained in each temperature range to compare the results. Cumulative maturation percentage was recorded at 6 hrs interval to ascertain peak mounting span. The influence of the treatment on the cocoon traits also was studied. Based on the peak mounting span, it was evident that in low temperature 10 pm treatment would be better. In medium and high temperature, treatment at 4 pm proved to be a better option. The influence of the treatment times at different temperature range on labour management is discussed.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.210-214
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• 2001

GlcNAc 2-epimerase gene from human was cloned. However GIcNAc 2-epimerase was expressed in E. coli as inclusion body formation. Several approaches were tried such as expression in low temperature and low concentration of IPTG. With these treatments production of active form of human GIcNAc 2-epimerase ι ,vas enhanced. For the direct synthesis of NeuAc from GlcNAc and pyruvate, NALase and GlcNAc 2-epimerase were characterized in terms of temperature effect on activity. equilibrium and stability, inhibition by pyruvate etc. For cheap and ease preparation of both the NALase and GlcNAc 2-epimerase, pEN24ma vector was made. which express both the NALasc and GIcNAc 2-epimerase simultaneously. In addition, E. coli BL21(DE3) harboring two plasmids was also made. Of the two systems, the latter was better for the expression of both enzymes.

• ETRI Journal
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• v.30 no.2
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• pp.308-314
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• 2008

In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.