• The Journal of the Acoustical Society of Korea
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• v.38 no.6
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• pp.621-629
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• 2019

A logical measure is suggested to estimate an accurate Sound Speed Profile (SSP) for the unusual variation of salinity in the Yellow Sea. Based on National Aeronautics and Space Administration (NASA)'s Aqua and Soil Moisture Active Passive (SMAP) satellite data, this measure identifies the area of temperature inversion effect and expansion of low salinity (<30.5 psu) water. Subsequently, on the area, the Conductivity, Temperature, and Depth (CTD) mounted unmanned maritime system estimates accurate SSP. In order to carry out this measure conveniently, a flow chart is demonstrated in this research. By using this measure which finds the high variational salinity area, the inaccuracy issue for calculating SSP from Expandable Bathy Thermograph (XBT) is expected to be solved.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.32-36
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• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.785-789
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• 2005

Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below $150^{\circ}C$ during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. $SiN_x$ films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.37 no.5 s.113
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• pp.41-49
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• 2005

This paper deals the effect of anthraquinone (AQ) on the contribution of sulphidity in kraft pulping of sapwood. The pulping conditions namely- active alkali concentration, pulpingtime, temperature and liquor ratio were varied in low ($15\%$) and high ($30\%$) sulphidity. $0.1\%$ AQ was added in the low and high sulphidity pulping with varying active alkali concentration and cooking time. At optimum conditions, low sulphidity kraft process produced about $44\%$ pulp yield with kappa number of about 23. But in high sulphidity kraft process kappa number was reduced to about 20 at the same yield. An addition of AQ reduced alkali requirement by $2\%$ on oven dried raw material and cooking time by 1 hour to produce pulp yield of about $44\%$ at kappa number 20. AQ is more effective in low sulphidity pulping than the high sulphidity pulping. The breaking length of kraft-AQ pulp was slightly higher than that of kraft pulp.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• The Korean Journal of Ecology
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• v.28 no.4
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• pp.231-235
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• 2005

Comparative water relations of Quercus acuta and Castanopsis cuspidata var, sieboldii were analyzed to assess their resistance to drought and low temperature stresses from early November to early December, As air temperature decreased both species showed an increased content of osmotically active solute concentration per unit of dry weight (NS/DW), leading to lower osmotic potential of both species at both full turgid state $(OP_{sat})$ and turgor loss point $(OP_{tlp})$ in December than November. No major difference in the ability to adjust osmotically was noticed between the two. This finding suggests that both species must respond adaptively under water and low temperature stresses to maintain turgor pressure in winter season. In addition to osmotic adjustment, a low bulk modulus of elasticity $(E_{max})$ shown in Castanopsis cuspidata var. sieboldii must also play an important role in turgor maintenance during winter season being apt to happen water and low temperature stresses in plants.

• Magazine of the Korean Society of Agricultural Engineers
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• v.40 no.4
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• pp.77-84
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• 1998

Adsorption and leaching characteristics of the artificial soils produced from water and wastewater treatment sludges were examined. The batch adsorption test and TCLP leaching test were used, and constituents of interest were heavy metals and nutrients. As, Cr, Cu, Pb, and Cd were analyzed for metals, and nitrogen and phosphorus were analyzed for nutrients. All the artificial soils showed strong adsorption and low leaching for the heavy metals, which implies that the artificial soils may not be hazardous to the environment due to heavy metals and even they can be utilized effectively to remove metals in solution like mine and industrial wastewaters. This is quite promising result because in most case heavy metals are the most concern in the application of sludge product to the farmland. For the nutrients, generally, artificial soils showed high adsorption and low leaching except artificial soil from wastewater sludge produced by low temperature firing. The artificial soils produced from water treatment sludge were active in adsorbing nutrients and showed low leaching that they can be practically used to remove nutrients in advanced treatment process of the wastewater. The artificial soils produced from wastewater treatment sludge were less active in adsorbing nutrients and showed high teaching. However, they could be used usefully if applied properly to the plant growing because of their fertilizing effect. Based on the test results, overall, the artificial soils were thought to be not hazardous to the environment and they could be more useful if applied properly.

• Journal of ILASS-Korea
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• v.29 no.2
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• pp.68-74
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• 2024

As awareness of environmental pollution problems increases worldwide, interest in air pollutants is increasing. In particular, NOx and PM, which are major pollutants in diesel vehicles, are contributing significantly to emissions. As a result, its importance is increasing. In this study, based on research results applied to large diesel vehicles, the problem of natural regeneration caused by low exhaust gas temperature during low speed and low load operation is solved by applying a complex regeneration DPF that is not affected by temperature conditions to small diesel vehicles. The feasibility of application to small diesel vehicles was reviewed by measuring the emission reduction efficiency. As a result of the engine test, the power reduction rate and fuel consumption rate before and after device installation under full load conditions were 2.9% decrease and 3.5% increase, respectively, satisfying the standard for a 5% reduction, and as a result of the regeneration equilibrium temperature (BPT) test, the regeneration temperature was 310℃. appeared at the level. The reduction efficiency test results for the actual vehicle durability test equipment showed 97.3% PM, 51.0% CO, and 31.1% HC, while the city commuter vehicle had PM 97.5%, CO 61.7%, HC 40.0%, and the school bus vehicle had PM 96.8%, CO 44.4%, HC 34.3%, and low-speed logistics vehicles showed a reduction efficiency of 98.2% for PM, 36.0% for CO, and 45.7% for HC. Based on the results of this study, in the future, it is necessary to secure DPF technology suitable for all vehicle types through actual vehicle application research on temperature condition-insensitive composite regenerative DPF for medium-sized vehicles.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.6
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• pp.404-409
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• 2014

This paper presents a Spread Spectrum Clock Generator (SSCG) based on Relaxation oscillator using Up/Down Counter. The current is controlled by a counter and the spread spectrum of the Relaxation Oscillator. A Relaxation Oscillator with temperature compensation using the BGR and ADC is presented. The current to determine the frequency of the Relaxation Oscillator can be controlled. The output frequency of the temperature can be compensated by adjusting the current according to the temperature using the code that is the output from the ADC and BGR. EMI Reduction of SSCG is 11 dB, and Spread down frequency is 150 kHz. The current consumption is $600{\mu}A$ from 5V and the operating frequency is from 2.3 MHz to 5.75 MHz. The rate of change of the output frequency with temperature was approximately ${\pm}1%$. The SSCG is fabricated in a 0.35um CMOS process with active area $250um{\times}440um$.