• Title/Summary/Keyword: low-temperature-active

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Effects of biostimulants, AMPEP and Kelpak on the growth and asexual reproduction of Pyropia yezoensis (Bangiales, Rhodophyta) at different temperatures

  • Sook Kyung Shin;Qikun Xing;Ji-Sook Park;Charles Yarish;Fanna Kong;Jang K. Kim
    • ALGAE
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    • v.39 no.1
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    • pp.31-41
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    • 2024
  • Acadian marine plant extract powder (AMPEP) and Kelpak are commercial biostimulants derived from brown algae Ascophyllum nodosum. This study was to determine if AMPEP and Kelpak can induce thermal resistance in Pyropia yezoensis. P. yezoensis blades were exposed to different concentrations (control: 0, low: 0.001, high: 1 ppm) of AMPEP and Kelpak at 10℃ for 6 and 7 days, respectively. Those blades were then cultivated in von Stosch enriched seawater medium at different temperatures (10, 15, 20, and 25℃) with 12 : 12 L : D photoperiod and 100 µmol m-2 s-1 of photosynthetically active radiation for additional 15 days. Results showed that P. yezoensisreproduced archeospores at 20 and 25℃ at all biostimulant conditions within 15 days. At lower temperatures (10 and 15℃), only AMPEP-treated P. yezoensis reproduced archeospores. P. yezoensis exposed to 1 ppm Kelpak exhibited higher phycoerythrin and phycocyanin contents than control and 0.001 ppm conditions at 15℃. AMPEP-treated conditions showed higher phycoerythrin and phycocyanin contents than control at 10℃. These results suggest that AMPEP and Kelpak may not enhance the thermal resistance of P. yezoensis. However, AMPEP stimulated archeospores release at lower temperatures. The treatment of AMPEP and Kelpak also increased the pigment contents in P. yezoensis. These results suggest that the use of seaweed-derived biostimulants can provide some economic benefits in P. yezoensis aquaculture. The enhancement of archeospores formation by AMPEP at lower temperature may also increase the productivity since Pyropia farming relies on the accumulation of secondary seedings via asexual reproduction.

Shear Strength Characteristics of Weathered Granite Soil below the Freezing Point (동결온도 조건에서의 화강풍화토 전단강도 특성에 관한 연구)

  • Lee, Joonyong;Choi, Changho
    • Journal of the Korean GEO-environmental Society
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    • v.14 no.7
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    • pp.19-29
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    • 2013
  • Analysis via classical soil mechanics theory is either ineffective or inappropriate for fully describing stress distribution or failure conditions in cold regions, since mechanical properties of soils in cold regions are different from those reported in the classical soil mechanics theory. Therefore, collecting and analyzing technical data, and systematic and specialized research for cold regions are required for design and construction of the structure in cold regions. Freezing and thawing repeat in active layer of permafrost region, and a loading condition affecting the structure changes. Therefore, the reliable analysis of mechanical properties of frozen soils according to various conditions is prerequisite for design and construction of the structure in cold regions, since mechanical properties of frozen soils are sensitive to temperature condition, water content, grain size, relative density, and loading rate. In this research, the direct shear apparatus which operates at 30 degrees below zero and large-scaled low temperature chamber are used for evaluating shear strength characteristics of frozen soils. Weathered granite soil is used to analyzed the shear strength characteristics with varying freezing temperature condition, vertical confining pressure, relative density, and water content. This research shows that the shear strength of weathered granite soil is sensitively affected by various conditions such as freezing temperature conditions, normal stresses, relative densities, and water contents.

Experimental Study on Interaction of Water Sprayed Curtain on Hot Surface of a Window Glass and its Effects on Glass Surface Temperature in Room Fires (구획화재 시 국부복사열에 노출된 유리면의 수막접촉에 따른 급냉파열특성 관한 실험적 연구)

  • 박형주;지남용
    • Fire Science and Engineering
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    • v.17 no.4
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    • pp.124-130
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    • 2003
  • This research focuses on analysis of a interaction fracture of various glasses due to contact of water sprayed curtain on hot glass surface with high temperature produced from convective heat source near glass wall. A large scaled experimental test was done in order to find the range of the glass surface temperature to be able to cause the breakage of the glasses when water droplets reach on the hot surface. This paper shows the allowable temperature of the glass surface for prevention of the cooling down breakage before water curtain droplets contact the surface. Allowable Temperature if $250^{\circ}C$ for the tempered glass but general glass is very relatively low. Therefore if the water curtain spray system was adequately activated by a thermal detector installed below ceiling adjacent glass wall with water curtain nozzle system, all hot glass would not break out by cooling water droplet's contact on the hot surface due to convective heat released by adjacent fire source near the glass wall.

On-Chip Full CMOS Current and Voltage References for High-Speed Mixed-Mode Circuits (고속 혼성모드 집적회로를 위한 온-칩 CMOS 전류 및 전압 레퍼런스 회로)

  • Cho, Young-Jae;Bae, Hyun-Hee;Jee, Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.3
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    • pp.135-144
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    • 2003
  • This work proposes on-chip full CMOS current and voltage references for high-speed mixed-mode circuits. The proposed current reference circuit uses a digital-domain calibration method instead of a conventional analog calibration to obtain accurate current values. The proposed voltage reference employs internal reference voltage drivers to minimize the high-frequency noise from the output stages of high-speed mixed-mode circuits. The reference voltage drivers adopt low power op amps and small- sized on-chip capacitors for low power consumption and small chip area. The proposed references are designed, laid out, and fabricated in a 0.18 um n-well CMOS process and the active chip area is 250 um x 200 um. The measured results show the reference circuits have the power supply variation of 2.59 %/V and the temperature coefficient of 48 ppm/$^{\circ}C$ E.

Electrodeposition of Silicon in Ionic Liquid of [bmpy]$Tf_2N$

  • Park, Je-Sik;Lee, Cheol-Gyeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.30.1-30.1
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    • 2011
  • Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

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Phenyl modified silica sol-gel films for photonics (Photonic 재로로서 페닐실리카 코팅막의 특성)

  • Ahn, Bok-Yeop;Seok, Sang-Il;Kim, Joo-Hyeun;Lim, Mi-Ae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.131-131
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    • 2003
  • The advent of photonic technologies in the field of communications and data transmission has been heavily increasing the demand in integrated optical (IO) circuits capable of accomplishing not only simple tasks like signal, but also more sophisticated functions like all-optical signal routing or active multiplexing/demultiplexing. In the last decade, sol-gel technology has been widely used to prepare optical materials. Sol-gel processes show many promises for the development of low-loss, high-performance glass integrated optical circuits. However, crack formation is likely to occur during heat treatment in thick gel films. In order to overcome the critical thickness limitation, the organic-modified silicate has been widely used. In this case coating matrices have been prepared from the organo-silanes of T structures, acidic catalyst and the as-prepared gel films have been heat-treated below 200$^{\circ}C$ to avoid the crack formation and the degradation of organic components. However, the films prepared in the acidic condition and the low heat temperature make the films contain high OH groups which is the major optical loss function. In this work, C$\sub$6/H$\sub$5/SiO$\sub$1.5/ films were prepared on silicon substrate by sol-gel method using base catalyst in a PTMS/NH$_4$OH/H$_2$O/C$_2$H$\sub$5/OH system. The sol showed spinable viscosity at 50 wt% of solid content, and neglectable viscosity change with time. The films were crack-free and transparent after curing at 450 $^{\circ}C$, and highly condensed to minimize OH content in C$\sub$6/H$\sub$5/SiO$\sub$1.5/ networks. The effects of heat treatment of the films are characterized on the critical thickness, the chemical composition and the refractive indices by means of SEM, FT-IR, TGA, prism coupler, respectively.

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Nickel Silicide Nanowire Growth and Applications

  • Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.215-216
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    • 2013
  • The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

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Novel Endoxylanases of the Moderately Thermophilic Polysaccharide-Degrading Bacterium Melioribacter roseus

  • Rakitin, Andrey L.;Ermakova, Alexandra Y.;Ravin, Nikolai V.
    • Journal of Microbiology and Biotechnology
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    • v.25 no.9
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    • pp.1476-1484
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    • 2015
  • Three endoxylanase-encoding genes from the moderately themophilic chemoorganotrophic bacterium Melioribacter roseus were cloned and expressed in Escherichia coli. Genes xyl2091 (Mros_2091) and xyl2495 (Mros_2495) encode GH10 family hydrolases, whereas xyl2090 (Mros_2090) represents the GH30 family. In addition to catalytic domains, Xyl2090 and Xyl2091 contain carbohydrate-binding modules that could facilitate their binding to xylans and Por sorting domains associated with the sorting of proteins from the periplasm to the outer membrane, where they are covalently attached. Recombinant endoxylanase Xyl2495 exhibited a high specific activity of 1,920 U/mg on birchwood xylan at 40℃. It is active at low temperatures, exhibiting more than 30% of the maximal activity even at 0℃. Endoxylanases Xyl2090 and Xyl2091 have lower specific activities but higher temperature optima at 80℃ and 65℃, respectively. Analysis of xylan hydrolysis products revealed that Xyl2090 generates xylo-oligosaccharides longer than xylopentaose. Xylose and xylobiose are the major products of xylan hydrolysis by the recombinant Xyl2091 and Xyl2495. No activity against cellulose was observed for all enzymes. The presence of three xylanases ensures efficient xylan hydrolysis by M. roseus. The highly processive "free" endoxylanase Xyl2495 could hydrolyze xylan under moderate temperatures. Xylan hydrolysis at elevated temperatures could be accomplished by concerted action of two cell-bound xylanases; Xyl2090 that probably degrades xylans to long xylo-oligosaccharides, and Xyl2091 hydrolyzing them to xylose and xylobiose. The new endoxylanases could be useful for saccharification of lignocellulosic biomass in biofuels production, bleaching of paper pulp, and obtaining low molecular weight xylooligosaccharides.

Effects of Ta addition in Co-sputtering Process for Ta-doped Indium Tin Oxide Thin Film Transistors

  • Park, Si-Nae;Son, Dae-Ho;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.334-334
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    • 2012
  • Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

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Molecular Characterization of the Levansucrase Gene from Pseudomonas aurantiaca S-4380 and Its Expression in Escherichia coli

  • Jang, Eun-Kyung;Jang, Ki-Hyo;Isaac Koh;Kim, In-Hwan;Kim, Seung-Hwan;Kang, Soon-Ah;Kim, Chul-Ho;Ha, Sang-Do;Rhee, Sang-Ki
    • Journal of Microbiology and Biotechnology
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    • v.12 no.4
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    • pp.603-609
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    • 2002
  • DFA IV is di-D-fructose-2,6':6,2'-dianhydride, consisting of two fructose residues. It can be enzymatically synthesized from levan by levan fructotransferase, and can be used for mineral absorption. Understanding of the structure and composition of levan is important to obtain high-level production of DFA IV. A bacterial strain, Pseudomonas aurantiaca 5-4380, was identified to produce low-branched levan, and the levansucrase gene (lsch) from this bacterium was found to be composed of 1,275 Up coding for a protein of 424 amino acids, with an estimated molecular weight of 47 kDa. The bacterial levansucrase gene was expressed in Escherichia coli DH5${\alpha}$ by its own promoter and lac promoter. The recombinant levansucrase was produced in soluble form with 170U of levansucrase activity from 1-ml E. coii culture broth. The expressed enzyme from the clone showed similar biochemical properties, such as size of active levansucrase, degree of branching, and optimum temperature, with P.aurantiaca 5-4380 levansucrase.