• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.498-503
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• 2018

Using the thermal ablation method, the oxidation behavior of $SiC_f/SiC$ composites was investigated in air and in the temperature range of $1,300^{\circ}C$ to $2,000^{\circ}C$. At the relatively low temperature of $1,300^{\circ}C$, passive oxidation, which formed amorphous phase, predominantly occurred in the thermal ablation test. When the oxidation temperature increased, SiO (g) and CO (g) were formed by active oxidation and the dense oxide layer changed to a porous one by vaporization of gas phases. In the higher temperature oxidation test, both active oxidation due to $SiO_2$ decomposition on the surface of the oxide layer and active/passive oxidation transition due to interfacial reaction between oxide and base materials such as SiC fiber and matrix phase simultaneously occurred. This was another cause of high temperature degradation of $SiC_f/SiC$ composites.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.12-15
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• 2007

Excimer-laser-based crystallization is ideallysuited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.167-172
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• 2016

The high temperature deformation behavior of $Ni_3Al$ and $Ni_3(Al,Mo)$ single crystals that were oriented near <112> was investigated at low strain rates in the temperature range above the flow stress peak temperature. Three types of behavior were found under the present experimental conditions. In the relatively high strain rate region, the strain rate dependence of the flow stress is small, and the deformation may be controlled by the dislocation glide mainly on the {001} slip plane in both crystals. At low strain rates, the octahedral glide is still active in $Ni_3Al$ above the peak temperature, but the active slip system in $Ni_3(Al,Mo)$ changes from octahedral glide to cube glide at the peak temperature. These results suggest that the deformation rate controlling mechanism of $Ni_3Al$ is viscous glide of dislocations by the <110>{111} slip, whereas that of $Ni_3(Al,Mo)$ is a recovery process of dislocation climb in the substructures formed by the <110>{001} slip. The results of TEM observation show that the characteristics of dislocation structures are uniform distribution in $Ni_3Al$ and subboundary formation in $Ni_3(Al,Mo)$. Activation energies for deformation in $Ni_3Al$ and $Ni_3(Al,Mo)$ were obtained in the low strain rate region. The values of the activation energy are 360 kJ/mol for $Ni_3Al$ and 300 kJ/mol for $Ni_3(Al,Mo)$.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.203-207
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• 1995

Polysilicon this film transistors (poly-Si TFTs) with different channel dimensions were fabricated on low-temperature crystalized amorphous silicon films and on as-deposited polysilicon films. The electrical characteristics of these TFTs were characterized and compared. The performance of the TFTs fabricated on the solid-phase crystalized amophous silicon films ws showon to be superior to that of the TFTs fabricated on the as-deposited polysilicon films. It was found that the performance of poly-Si TFTs depends strongly on the material characteristics of the polysilicon films used as the active layers, but only weakly on the channel dimensions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Vacuum Magazine
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• v.3 no.4
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• pp.14-18
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• 2016

In this article, we will summarize recent advances in ultrahigh vacuum (UHV) low-temperature scanning tunneling microscopy (STM) during the last decade. Leading STM groups have finished or are constructing UHV milli-Kelvin high magnetic field STM capable of a few tens of milli-Kelvin and ~ 10 tesla. Applications with UHV sub-Kelvin high magnetic STM have been increased since mid-2000's. Active research using UHV low temperature tuning fork atomic force microscopes and UHV photon low-temperature scanning tunneling microscopes will be introduced. Considering these advances of UHV low-temperature STM we will discuss next trend in STM in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of IKEEE
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• v.27 no.1
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• pp.25-29
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• 2023

Effect of the processes of polysilazane solid electrolyte layer and silver (Ag) active electrode on the electrical characteristics of memristor was investigated. The memristor with the solid electrolyte annealed at higher temperature exhibited the higher set voltage and better memory retention characteristics than that annealed at lower temperature. The increase in the set voltage and the improvement of the memory retention characteristic at high annealing temperature were attributed to a reduction in the void density and an increase in the void uniformity inside the solid electrolyte, respectively. In the case where the polysilazane solution's concentration is high, the memristor exhibited rapid degradation of low resistive state even annealed at high temperature. Lastly, it was shown that the memristor with the solution-processed Ag active electrode showed WORM property unlike that with the vacuum-processed Ag active electrode. The WORM property was possibly due to morphological defects present in the solution-processed Ag active electrode.