• Journal of the Korean Society for Precision Engineering
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• v.28 no.11
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• pp.1227-1233
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• 2011

Cellulose Electro-Active Paper (EAPap) has been known as a new smart material that is attractive for a bio-mimetic actuator due to its merits in terms of lightweight, dry condition, large displacement output, low actuation voltage and low power consumption. Cellulose EAPap is made by regenerating cellulose and aligning its micro-fibrils. This paper introduces several EAPap materials, which are based on natural cellulose and its hybrid nanocomposites mixed/blended with inorganic functional materials. By chemically bonding and mixing with carbon nanotubes and inorganic nanoparticles, the cellulose EAPap can be a hybrid nanocomposite that has versatile properties and can meet material requirements for many applications. Recent research trend of the cellulose EAPap is introduced in terms of material preparations as well as application devices including actuators, temperature and humidity sensors, biosensors, chemical sensors, and so on. This paper also explains wirelessly driving technology for the cellulose EAPap, which is attractive for bio-mimetic robotics, surveillance and micro-aerial vehicles.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.182-184
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• 2004

GTAW of titanium using flux cored wire was exploited. Flux cored wire with MgF$_2$ resulted in 60% deeper penetration than conventional active GTAW which applys fluxes in the form of paste. Emission spectroscopy of the arc with MgF$_2$ showed Ti II peak, indicating higher temperature arc. Elux cored wire formed weld metal with reasonably low oxygen content.

• Proceedings of the Korean Fiber Society Conference
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• 2003.10b
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• pp.307-308
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• 2003

Improved wettability and dyeability of Polypropylene(PP) fabrics were obtained using glow discharge plasma by grafting nitrogen-containing active groups on the surface. Few studies of glow discharge plasma on PP fabrics exist. The objective of this study was to give a fabric a good affinity for water. (omitted)

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.4
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• pp.1-15
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• 1997

This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.153-156
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• 2004

A newly developed flexible active-matrix (AM-) electrophoretic display (EPD) is reported. The AM-EPD features: (1) low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology, (2) fully integrated scan- and data-drivers, (3) flexibility and light-weight realized by transferring the whole circuits onto a plastic substrate using $SUFTLA^{TM}$ (Surface Free Technology by Laser Annealing/Ablation) process. A large storage capacitor is formed in each pixel so that driving electric field can be kept sufficiently strong during a writing period Two-phase driving scheme, a reset-phase which erases a previous image and a writing-phase for writing a new image, was chosen to cope with EPD's high driving voltage. The flexible AM-EPD has been successfully operated with a driving voltage of 8.5 V.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.251-258
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• 1996

The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.3
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• pp.277-284
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• 2005

Catalytic oxidation of toluene in low concentrations was investigated over various supports. As the manganese oxides loading was increased, the conversion of toluene increased at a lower temperature. The 18.2 $wt\%$ $Mn/\gamma-Al_2O_3$ appeared to be the most active catalyst. Among the supports, $\gamma-Al_2O_3$ was more active than $TiO_2$ and $SiO_2$. Manganese oxide catalysts prepared from manganese nitrate precursor were better for complete oxidation of toluene than those prepared from manganese sulfate and chloride precursor because sulfate from manganese sulfate and chloride from chloride manganese remained even after the calcination by XRD (X-Ray Diffraction) analyses.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.799-802
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• 2005

This paper described a 2.2" $QCIF^+$ ($176{\times}RGB{\times}220$) active matrix organic light-emitting diode display (AMOLED) using low-temperature poly-silicon (LTPS) technology. We have designed the OLED pixel to match the OLED material characteristic with COG specification and optimized pixel structure to improve color gamma adjustment and simplify signal complexity.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1032-1035
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• 2009

Several different production technologies for Low-Temperature Poly-Silicon (LTPS) have been proposed over the last years. However, finally the progress in Excimer-laser-based crystallization has lead to the best cost-to-performance ratio of LTPS manufacturing for use in active-matrix-based displays. In this paper, we report on recent and significant technical advances in light sources, optical beam deliveries and beam irradiation systems targeted at enabling ultra-uniform mura-free LTPS active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

• Journal of Information Display
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• v.6 no.4
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• pp.11-15
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• 2005

We propose a current mode logic circuit design method for LTPS TFT for enhancing circuit operating speed. Current mode inverter/buffers with passive resistive load had been designed and fabricated. Measurement results indicated that the smaller logic swing of the current mode allowed significantly faster operation than the static CMOS. In order to reduce the chip size, both all pTFT and all nTFT active load current mode inverter/buffer had been designed and analyzed by HSPICE simulation. Even though the active load current mode circuits were inferior to the passive load circuits, it was superior to static CMOS gates.