• Korean Journal of Materials Research
• /
• v.23 no.6
• /
• pp.309-315
• /
• 2013

$GdBa_2Cu_3O_{7-y}$(Gd123) powders were synthesized by the solid-state reaction method using $Gd_2O_3$ (99.9% purity), $BaCO_3$ (99.75%) and CuO (99.9%) powders. The synthesized Gd123 powder and the Gd123 powder with $Gd_2O_3$ addition ($Gd_{1.5}Ba_2Cu_3O_{7-y}$(Gd1.5)) were used as raw powders for the fabrication of Gd123 bulk superconductors. The Gd123 and Gd1.5 bulk superconductors were fabricated by sintering or a top-seeded melt growth (TSMG) process. The superconducting transition temperature ($T_{c,onset}$) of the sintered Gd123 was 93 K and the transition width was as large as 20 K. The $T_{c,onset}$ of the TSMG processed Gd123 was 82 K and the transition width was also as large as 12 K. The critical current density ($J_c$) at 77 K and 0 T of the sintered Gd123 and TSMG processed Gd123 were as low as a few hundreds A/$cm^2$. The addition of 0.25 mole $Gd_2O_3$ and 1 wt.% $CeO_2$ to Gd123 enhanced the $T_c$, $J_c$ and magnetic flux density (H) of the TSMG processed Gd123 sample owing to the formation of the superconducting phase with high flux pinning capability. The $T_c$ of the TSMG processed Gd1.5 was 92 K and the transition width was 1 K. The $J_cs$ at 77 K (0 T and 2 T) were $3.2{\times}10^4\;A/cm^2$ and $2.5{\times}10^4\;A/cm^2$, respectively. The H at 77 K of the TSMG-processed Gd1.5 was 1.96 kG, which is 54% of the applied magnetic field (3.45 kG).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.3 no.3
• /
• pp.517-531
• /
• 1999

This paper presents the development of the 2-mode variable gain high power amplifier for a transmitter of INMARSAT-M operating at L-band(1626.5-1646.5 MHz). This SSPA(Solid State Power Amplifier) is amplified 42 dBm in high power mode and 36 dBm in low power mode for INMARSAT-M. The allowable error sets +1 dBm of an upper limit and -2 dBm of a lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier, The HP's MGA-64135 and Motorola's MRF-6401 are used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 are used the high power amplifier. The SSPA was fabricated by the circuits of RF, temperature compensation and 2-mode gain control circuit in aluminum housing. The gain control method was proposed by controlling the voltage for the 2-mode. In addition, It has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. The realized SSPA has 42 dB and 36 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.5:1 The minimum value of the 1 dB compression point gets 5 dBm for 2-mode variable gain high power amplifier. A typical two tone intermodulation point has 32.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.the design target.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Korean Chemical Engineering Research
• /
• v.45 no.4
• /
• pp.378-383
• /
• 2007

A novel fabrication method for the multi-component metal oxides such as zirconium titanate($Zr_xTi_{1-x}O_2$) has been suggested, which would yield the uniform film characteristics and control the film composition at relatively low process temperature. The method has the basic concept that firstly layer-by-layer structure is constructed with the primitive oxide layers, which are components of the desired multi-component oxides, and secondly the film is annealed at appropriate thermal conditions for the transformation to a single-phase multi-component oxides. In this study, PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) possessing the superior thickness controllability was introduced to prepare $ZrO_2$ and $TiO_2$ thin film for zirconium titanate. Single-phase zirconium titanate thin films have been prepared successfully by the interdiffusion of oxide multilayers having several alternating layers of $ZrO_2$ and $TiO_2$. The Zr/Ti ratio of zirconium titanate could be controlled easily by altering the thickness of $ZrO_2$ and $TiO_2$ thin film.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.1-7
• /
• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.412-412
• /
• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.4
• /
• pp.150-155
• /
• 2020

Alumina (Al₂O₃) is mainly used as a structural ceramic material and to have good mechanical properties requires a dense microstructure. In commercial fabrication, the liquid phase sintering process is adjusted to reduce the sintering temperature of alumina. In this study, the effect of added amounts of cobalt oxide as a coloring agent on the microstructure and mechanical properties was investigated in the CaO-SiO₂-MgO-system liquid phase sintering of 92 % alumina at various sintering temperatures. When 11 wt% Co₂O₃ was added, a rearrangement of alumina particles, which is the main densification step in liquid phase sintering, occurred from a sintering temperature of 1200℃. Solution re-precipitation and coalescence steps followed from 1300℃ with the grain growth of alumina particles. The addition of excess Co₂O₃ and sintering temperatures above 1400℃ resulted in a decrease in sintered density and Vickers hardness, because of the low viscosity of the liquid phase. In 92 % alumina with the addition of 11 wt% Co₂O₃, a sintered density and Vickers hardness of 3.86 g/㎤ and 12.32 GPa, respectively, were obtained at a sintering temperature of 1350℃.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.8A
• /
• pp.697-704
• /
• 2005

In this paper, Passive Temperature Compensation Technology is apply to 8-channel Optical multiplexer with 1000Hz channel spacing. The 8-channel multiplexer is fabricated by connecting three cascaded Mach Zehnder Interferometer(MZI) of optical fiber type, and each interferometer has the wavelength interval of 100GHz, 2000Hz and 4000Hz, respectively. Furthermore, to acquire uniform insertion loss, it is fabricated by using Wavelength Flatten Coupler(WFC) in which the variation of insertion loss is low. $CO_2$ laser to adjust precisely the wavelength. The optical fiber is very sensitive in the thermal variation around. Thus, When fabrication the prototype, it is applied a technique to compensate the optical thermal effect because the center wavelength at the output is shifted according to the thermal variation around. In summary, The prototype composed by eight cascaded MZI has an insertion loss of 5.5 dB, the bandwidth of 0.8nm at 0.5 dB point, and channel crosstalk of 25 dB. Furthermore, the loss dependent on polarization is measured as 0.06dB. Consequently, the output wavelength is shifted within 0.05 m when the surrounding temperature varies until $60^{\circ}C$

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.2
• /
• pp.79-84
• /
• 2014

To investigate the plating properties of a diethylene glycol-based Ag immersion plating solution containing citric acid, silver immersion plating was performed in a range from room temperature to $50^{\circ}C$ using sputtered Cu specimens. The used Cu specimens possessed surface structure with large numbers of pinholes which were created with over-acid etching. The Ag immersion plating performed at $40^{\circ}C$ exhibited that the pinholes and copper surface were completely filled with Ag just after 5 min mainly due to galvanic displacement reaction, indicating the best plating properties. Subsequently, the surface morphology of Ag-coated Cu became rougher as the plating time increased to 30 min because of the deposition of silver nanoparticles created by chemical reduction in the solution. The specimen that its overall surface was covered with silver indicated the start of oxidation at temperature higher than around $50^{\circ}C$ in air as compared with pure Cu, indicating enhanced anti-oxidation properties.

• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.115-123
• /
• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.