• Journal of KIISE:Computer Systems and Theory
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• v.34 no.8
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• pp.367-376
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• 2007

In this paper, we introduce an application-specific and adaptive power management technique for portable systems that support dynamic voltage scaling (DVS). We exploit both the idle time of multitasking systems running soft real-time tasks as well as memory- or CPU-bound code regions. Detailed power and execution time profiles guide an adaptive power manager (APM) that is linked to the operating system. A post-pass optimizer marks candidate regions for DVS by inserting calls to the APM. At runtime, the APM monitors the CPU's performance counters to dynamically determine the affinity of the each marked region. for each region, the APM computes the optimal voltage and frequency setting in terms of energy consumption and switches the CPU to that setting during the execution of the region. Idle time is exploited by monitoring system idle time and switching to the energy-wise most economical setting without prolonging execution. We show that our method is most effective for periodic workloads such as video or audio decoding. We have implemented our method in a multitasking operating system (Microsoft Windows CE) running on an Intel XScale-processor. We achieved up to 9% of total system power savings over the standard power management policy that puts the CPU in a low Power mode during idle periods.

• Korean Journal of Agricultural Science
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• v.20 no.1
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• pp.68-87
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• 1993

Data acquisition system and computer program developed in this study could be well used in engine vibration analysis. The system and program developed were also operated to be able to control measuring interval, number of channels, number of data. The flywheel was specially studied to provide the proper weight with rubber damper for the engine design at low level of vibration. This study was conducted to obtain basic data which affect the engine vibration. The experiment of this study was performed on original weight flywheel, weight-reduced flywheel, weight-reduced and rubber-coated flywheel, weight-reduced and damper-attached flywheel. Avarage of peak value, maximum vibration, power spectrum density based on FFT analysis are major factors of this experiment. Results were obtained as follows : 1. When rubber was inserted in the flywheel rim of which weight was reduced from 32.2kgf to 24.4kgf, maximum vibration of the engine was decreased 48.3% at X axis, 35.5% at Y axis and 34.6% at Z axis in comparison with the flywheel of original weight. 2. When the flywheel of rubber damper was compared with the original flywheel, the average of absolute vibration for rubber damped flywheel was decreased at X, Y, Z axis and especially its decreasing rate was so high at X-axis comparing with the other flywheel, which implied that rubber damper was very useful to reducing the vibration of the engine at X axis. 3. Hysteresis losses of X, Y, Z axis were greatly decreased in the flywheel with rubber damper on rim. 4. Damped oscillation effect on X and Y axis vibration above average peak vibration by the flywheel of rubber damper on rim was larger than those by the other flywheels. 5. Power spectrums of vibration at real and imaginery part were bi-mode type. The vibration frequency of rubber dampered flywheel which weight is decreased was slightly increased as compared with original flywheel.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.1 s.307
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• pp.45-52
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• 2006

In this paper, authors propose a step-up converter of pulse width modulation (PWM) and power factor correction (PFC) by using a novel loss-less snubber. The proposed converter for a discontinuous conduction mode (DCM) eliminates the complicated circuit control requirement and reduces the size of components. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of ac input voltage under the constant duty cycle switching. Thereupon, the input power factor is nearly unity and the control method is simple. In the general DCM converters, the switching devices are fumed-on with the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve a soft switching (ZCS and ZVS) of the switching turn-off, the proposed converter is constructed by using a new loss-less snubber which is operated with a partial resonant circuit. The result is that the switching loss is very low and the efficiency of converter is high. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.37 no.2
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• pp.111-118
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• 2024

An in-structure response spectrum (ISRS) is required to evaluate the seismic performance of a nuclear power plant (NPP). However, when a new ISRS is required because of the change in the unique spectrum of an NPP site, considerable costs such as seismic response re-analyses are incurred. This study provides several approaches to generate approximate methods for ISRS scaling, which do not require seismic response re-analyses. The ISRSs derived using these approaches are compared to the original ISRS. The effect of the ISRS of the approximate method on the seismic response and seismic performance of one of the main systems of an NPP is analyzed. The ISRS scaling approximation methods presented in this study produce ISRSs that are relatively similar at low frequencies; however, the similarity decreases at high frequencies. The effect of the ISRS scaling approximate method on the calculation accuracy of the seismic response/seismic performance of the system is determined according to the degree of similarity in the calculation of the system's essential mode responses for the method.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.3
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• pp.59-64
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• 2002

In the RFID system using ISM-band, The tag mounted at the object has used the DC power by rectifying the RF signals of the small antenna for operating the micro-controller and memory. The performance of the tag would be reduced because of the second harmonics generated by the nonlinearity of the semiconductor and the spurious signal excited the high order mode of the antenna. This paper has realized the novel type low-pass filter with "the Stub-I type DGS slot structure" to improve the efficiency of the tag by suppressing the harmonics. The optimized frequency character at the pass-band/stop-band has obtained by tuning the stub width and slit width of I type slot. The measured result of the LPF has the cutoff frequency 3.25 GHz, the insertion loss about -0.29~-0.3 dB at pass-band 2.4 GHz~2.5 GHz, the return loss about -27.688~-33.665 dB at pass-band with a good performance, and the suppression character is about -19.367 dB at second harmonics frequency 4.9 GHz. This DGS LPF may be applied the various application as the RFID, WLAN to improve the efficiency of the system by suppressing the harmonics and spurious signals. 

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.489-492
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• 2005

We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

• The KIPS Transactions:PartD
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• v.11D no.4
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• pp.783-798
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• 2004

An e-business client application in ubiquitous mobile computing environment may become disconnected from the enterprise server due to broken communication connections caused by the limitation of mobile computing environments(limited battery life of the mobile device, low bandwidth communication, incomplete wireless communication infrastructure, etc). It Is even Possible that mobile client application Intentionally operates in disconnected mode to reduce communication cost and the power consumption of the mobile device. We use “data hoarding” as a means of providing local autonomy to allow transactions to be processed and committed on the mobile host despite of disconnection. The key problem to this approach is the synchronization problem that serialize potentially conflicting updates from disconnected clients on master objects of the server database. In this paper, we present a new transaction synchronizing method that splits a transaction into a set of independent component transactions and give the synchronization priority on each component taking the possibility of use and conflicts in the server into consideration. Synchronization is performed component by component based un synchronization priority. After the Preferred component of a no bile transaction succeeds in synchronization with the server, the mobile transaction can pre-commit at server. A pre-committed transaction's updated value is made visible at server before the final commit of the transaction. The synchronization of the component with low synchronization priority can be delayed in adaption to wireless bandwidth and computing resources. As a result, the availability of important data updated by mobile client is increased and it can maximize the utilization of the limited wireless bandwidth and computing resources.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.