• Title/Summary/Keyword: low-power dissipation

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Design of a Low Power Self-tuning Digital System Considering Aging Effects (노화효과를 고려한 저전력 셀프 튜닝 디지털 시스템의 설계)

  • Lee, Jin-Kyung;Kim, Kyung Ki
    • IEMEK Journal of Embedded Systems and Applications
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    • v.13 no.3
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    • pp.143-149
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    • 2018
  • It has become ever harder to design reliable circuits with each nanometer technology node; under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Therefore, circuit designers need to consider these reliability effects in the early stages of design to make sure there are enough margins for circuits to function correctly over their entire lifetime. However, such an approach excessively increases the size and power dissipation of a system. As the impact of reliability, new techniques in designing aging-resilient circuits are necessary to reduce the impact of the aging stresses on performance, power, and yield or to predict the failure of a system. Therefore, in this paper, a novel low power on-chip self-tuning circuit considering the aging effects has been proposed.

Fabrication and Characteristics of 300V Mo-MPS Rectifier (300V용 Mo-MPS 정류기의 제조 및 그 특성)

  • 최형호;박근용;김준식;최시영
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.6
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    • pp.393-399
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    • 2003
  • The current paper presents a new Mo-MPS rectifier using molybdenum as barrier metal to improve on the low forward voltage drop and power dissipation of the coventional Al-MPS and Pt-MPS rectifier. Electrical characteristics of the fabricated Mo-MPS rectifier are imvestigated compared with Al-MPS and Pt-MPS rectifier. At the same current level, the forward voltage drop of the Mo-MPS was reduced by 0.11V~0.24V compared to that of the conventional MPS rectifier. Accordingly, since the Power dissipation of a rectifier mostly depends on the forward current density and forward voltage drop, the Mo-MPS rectifier achieved improved power dissipation when compared to the conventional MPS rectifier. The reverse breakdown voltage of a Mo-MPS rectifier with 68% Schottky junction area was about 304y. Despite having a lower forward voltage drop than a conventional MPS rectifier, the Mo-MPS rectifier still exhibited a higher reverse breakdown voltage.

Analysis of Insulation Characteristics of Low-Voltage Induction Motors Fed by Pulse-Controlled Inverters (인버터 구동형 저압 유동전동기의 절연특성 분석)

  • 박도영
    • Proceedings of the KIPE Conference
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    • 2000.07a
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    • pp.195-198
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    • 2000
  • In this paper the insulation characteristics test results of 25 low-voltage induction motors($3\phi$, 5HP, 380V) are presented. Five different types of insulation techniques are applied to 25 motors. The maximum partial discharge (PD) magnitude ($\textrm{Q}_{m}$) discharge inception voltage (DIV) dissipation factor tip-up ($\Delta$tan$\delta$) and rate of change in AC current($\Delta$I) are measured by PD and AC current tests. Also the insulation breakdown tests by high voltage pulse are performed and the corresponding breakdown voltage are obtained.

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Design of POSCAG signal decoder for operating time improvement in pager (Pager 동작 시간 향상을 위한 POCSAG Signal Decoder의 설계)

  • 최종문;김영대;한정익
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.2
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    • pp.361-370
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    • 1997
  • In this paper, we designed POCSAG Signal Decoder to improve operating time in pager. We showed POCSAG Signal Pattern sent by transmitter and operation of this decoder. We also showed that the Pager using this decoder was equipped with Wide Area Signal Detection and designed the hardware which realizes this operation and implemented it with ASIC chip. As we inspected the function of the ASIC chip and tested the performance, we could find that the chip operated in low voltage and that power dissipation was low.

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A CMOS Single-Supply Op-Amp Design For Hearing Aid Application

  • Jarng, Soon-Suck;Chen, Lingfen;Kwon, You-Jung
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.206-211
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    • 2005
  • The hearing aids specific operational amplifier described in this paper is a single-supply, low voltage CMOS amplifier. It works on 1.3V single-supply and gets a gain of 82dB. The 0.18${\mu}m$ CMOS process was chosen to reduce the driven voltage as well as the power dissipation.

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A Design of 20 MHz CMOS Continuous Time Low-Pass Filter Using Linear Transconductors (선형 트랜스컨덕터를 이용한 20 MHz CMOS 연속시간 저역-통과 여파기의 설계)

  • 박희종;박상렬;김동용;차형우;정원섭
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.357-360
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    • 1999
  • A 20 MHz CMOS continuous low-pass filter using simulated floating inductor consisted of two fully-differential transconductors and a capacitor is presented. The theory of operation is described and simulation results show close agreement between predicted behaviour and experimential performance. Simulation results show that the filter has ripple bandwidth of 22 MHz, pass-band ripple of 0.36 ㏈. and cutoff frequency of 26 MHz at supplay voltage of $\pm$3 V. The power dissipation is 19.2 ㎽.

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A Snubber Design for Low Power Dissipation and Overvoltage Limitation in Three-Level GTO Inverters (3-레벨 GTO 인버터를 위한 새로운 스너버회로 설계)

  • Suh, Jae-Hyeong;Suh, Bum-Seok;Hyun, Dong-Seok
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.153-155
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    • 1994
  • This paper presents a new low loss snubber including the overvoltage snubber for three-level GTO inverters. The proposed snubber can not only minimizes the snubber loss and the number of components but also improve blocking voltage balancing problem between the inner and the outer GTOs.

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Low Power Design on Heater and Cathode of Electron Gun for High Resolution CRT (고해상도 CRT용 전자총의 히터 및 캐소드 저전력 설계)

  • Kim Hack-Sung
    • The Transactions of the Korean Institute of Power Electronics
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    • v.10 no.6
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    • pp.618-625
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    • 2005
  • This paper has achieved that an optimal design and experiments of heater and cathode of electron gun that serve to embody high current density in CRT display. For the high brightness, high resolution and larger size in CRT display, high current density of electron gun is indispensible. An Impregnation style cathode is used, and must heighten operating temperature of heater to get high current density for this, it is proportional hereupon and power dissipation increases. In this paper, to get low power cathode with high current density, There are produced and tested sample that differ lead type of heater, coating method, the pitch and number of winding of the first and second coiling in the heat emission area for the low power design of high current density cathode heater in this paper.

FSM State Assignment for Low Power Dissipation Based on Markov Chain Model (Markov 확률모델을 이용한 저전력 상태할당 알고리즘)

  • Kim, Jong-Su
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.137-144
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    • 2001
  • In this paper, a state assignment algorithm was proposed to reduce power consumption in control-flow oriented finite state machines. The Markov chain model is used to reduce the switching activities, which closely relate with dynamic power dissipation in VLSI circuits. Based on the Markov probabilistic description model of finite state machines, the hamming distance between the codes of neighbor states was minimized. To express the switching activities, the cost function, which also accounts for the structure of a machine, is used. The proposed state assignment algorithm is tested with Logic Synthesis Benchmarks, and reduced the cost up to 57.42% compared to the Lakshmikant's algorithm.

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A Sturdy on WLAN RFIC VCO based on InGaP/GaAs HBT (InGaP/GaAs HBT를 이용한 WLAN 용 Low Noise RFIC VCO)

  • Myoung, Seong-Sik;Park, Jae-Woo;Cheon, Sang-Hoon;Yook, Jong-Gwan
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.155-159
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    • 2003
  • This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

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