• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.453.1-453.1
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• 2014

Fluorine-doped tin oxide (FTO), which is commonly used in dye-sensitized solar cells (DSSCs), is a promising material of transparent conducting oxides (TCOs) because of advantages such as high chemical stability, high resistance, high optical transparency (>80% at 550nm), and low electrical resistivity (${\sim}10-4{\Omega}{\cdot}cm$). Especially, dye-sensitized solar cells (DSSCs) have been actively studied since Gratzel's research group required FTO substrate as a charge collector. When FTO substrates are used in DSSCs, photo-injected electrons may experience recombination at interface between dye-bonded semiconductor oxides ($TiO_2$) on FTO substrate and the electrolyte. To solve these problems, one is that because recombination at FTO substrate cannot be neglected, thin $TiO_2$ layer on FTO substrate as a blocking layer was introduced. The other is to control the morphology of surface on FTO substrate to reduce a loss of electrons. The structural, electrical, and optical characteristics of morphology controlled-FTO thin films as TCO materials were analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Hall Effect Measurement, and UV spectrophotometer. The performance of DSSCs fabricated with morphology controlled FTO substrates was performed using Power Conversion Efficiency (PCE). We will discuss these results in detail in Conference.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.195-195
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• 2010

In recent years, Anodic aluminum oxide(AAO) has become popular and attractive materials. It can be easily fabricated and self-organized pore structures. It has been widely used as a biosensor membrane, photonic crystal for optical circuit and template for nanotube growth etc. In previous papers, the theory was developed that AAO shows anisotropic optical properties, since it has anisotropic structure with numerous cylindrical pores. It gives rise to the anisotropy of the refractive index called as birefringence. It can be used as conventional polarizing elements with high efficiency and low cost. Therefore, we would like to compare the theory and experimental results in this study. One method which can measure effective refractive index of thin film is the prism coupling technique. It can give accurate results fast and simply. Furthermore, we can also measure separately the refractive index with different polarization using polarization of the laser (TE mode and TM mode). We calculated the effective refractive index with effective medium approximations (EMAs) by pore size in the SEM image. EMAs are physical models that describe the macroscopic system as the homogeneous and typical method of all mean field theories.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.69-69
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• 2010

현대 건축물에서 건물에너지의 손실은 대부분은 창호를 통하여 유출되어지고 있으며 에너지 절감을 위해서는 창호의 단열성을 향상시켜야한다. 저방사(Low Emissivity) 코팅유리는 건축물의 냉난방비용을 절약할 수 있는 대표적인 건축재료로써 외부에서 유입되는 태양광의 가시광선 영역은 높은 투과율을 가지면서 적외선 영역과 겨울철 실내 난방열을 반사하는 특징을 지니는 박막코팅기술이다. 이 코팅유리는 일반적으로 유전체/금속/유전체 다층박막 구조로 되어있으며, 유전체층은 내구성 증진과 금속층의 반사를 낮추어 투과율이 향상된다. 금속층은 적외선영역의 복사에너지를 반사하는 역할을 하며 전도성이 우수한 Ag 또는 Au, Pt 등을 이용하고 있다. Ag의 경우 산화물기판 위에 증착하였을 경우 island 성장을 하고 이들의 합체는 전기적, 광학적 특성에 큰 영향을 미치게 된다. 본 연구에서는 DC-sputtering법으로 제조된 Ag/glass, Ag/Ta/glass 박막을 제조하고 Ta seeding이 Ag의 전기적, 광학적 성질에 미치는 영향을 관찰하였다. 박막의 표면 미세구조는 FE-SEM(Field Emission Scanning Electron Microscope)과 AFM(Atomic Force Microscope)으로, 표면저항은 4 point probe로 분석하였다. 광투과율은 UV-Vis spectroscopy와 FT-IR로 측정하였으며 측정파장범위는 각각 200~1100nm와 1400~2400nm 이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.336-336
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• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.376-376
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• 2011

I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.294-297
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• 2008

In this paper, a novel non-vacuum technique is described for the fabrication of a $CuInSe_2$ (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.