• 전력전자학회논문지
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• 제19권4호
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• pp.383-390
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• 2014

This paper deals with novel soft-switching method for a bidirectional DC-DC converter in battery charging and discharging system. The proposed soft-switching method provides ZVS and ZCS at turn-on, and ZVS at turn-off of the switch in both charging and discharging operation modes. The soft switching condition can be obtained in wide load range, and provide low switching loss as well as low voltage spike at turn-off of the switch. Proposed method is analyzed in charging and discharging mode. Simulation and experimental results validate the usefulness of the proposed soft-switching method.

• 한국초전도ㆍ저온공학회논문지
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• 제23권4호
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• pp.19-24
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• 2021

The low normal zone propagation velocity (NZPV) of high-temperature superconducting (HTS) tape leads to a quench protection problem in HTS magnet applications. To overcome this limitation, various studies were conducted on HTS coils without turn-to-turn insulation (NI coils) that can achieve self-protection. On the other hand, NI coils have some disadvantages such as slow charging and discharging time. Previously, the HTS coils with turn-to-turn insulation (INS coils) were operated in power supply (PS) driven mode, which requires physical contact with the external PS at room-temperature, not in persistent current mode. When a quench occurs in INS coils, the low NZPV delays quench detection and protection, thereby damaging the coils. However, the rotary HTS flux pump supplies the DC voltage to the superconducting circuit with INS coils in a non-contact manner, which causes the INS coils to operate in a persistent current mode, while enabling quench protection. In this paper, a new protection characteristic of HTS coils is investigated with INS coils charging through the rotary HTS flux pump. To experimentally verify the quench protection characteristic of the INS coil, we investigated the current magnitude of the superconducting circuit through a quench, which was intentionally generated by thermal disturbances in the INS coil under charging or steady state. Our results confirmed the protection characteristic of INS coils using a rotary HTS flux pump.

• 조명전기설비학회논문지
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• 제17권1호
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• pp.86-93
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• 2003

본 논문은 출력전류를 증가하기 위해서 L과 C를 공진 탱크회로로 구성하는 고주파 공진을 이용한 전류형 고주파 공진 U-U 컨버터를 보여주고 있다. 이 회로구성은 L과 C를 공진 탱크회로로 구성하였고, 스위칭 양단에 커패시터를 삽입하여 공진과 ZVS(Zero Voltage Switching) 커패시터로 동시에 사용하였다. 따라서, 컨버터는 턴ㆍ온, 턴ㆍ오프에서 스위칭 손실과 집음, 전압 스트레스를 줄일 수 있고, U전원 공급으로부터 리플이 적은 일정한 전류를 공급하기 위한 U 리액터는 공진 리액터와 연결되어 있기 때문에 부하 단락시 안정하게 동작하는 장점이 있다. 본 컨버터의 회로해석은 무차원화 파라미터 기법을 도입하여 행하였고, 또한 ZVS영역특성, 출력전력특성, 출력전압특성, 출력전류특성 등 여러 특성평가를 하였다. 여러 특성평가를 바탕으로 설계하였고, 실험을 통한 실험치와 이론치를 비교하여 이론해석의 정당성도 입증하였다.

• 전기학회논문지P
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• 제58권4호
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• pp.615-618
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• 2009

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.559-562
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• 2000

The problem of noise generation due to PWM switched-mode power converter has been widely noticed from the viewpoint of Electromagnetic Interference(EMI). Many kings of topologies for resonant converters have been developed both to overcome this noise problem and to attain high power efficiency. It is reported in references that resonant converters which are derived from PWM converter using resonant switch show much lower noise characteristics than PWM converter, and that current-mode resonant converter is more sensitive to stored charge in rectifying diode than voltage-mode counterpart concerning surge generation at diode’s turn-off. On the other hand, above mentioned resonant converters have defect of high-voltage stress on semiconductor switch and complicated circuit configuration. Hence, the simplified Forward-type resonant converter has been proposed and investigated due to its prominent features of simplicity of circuit configuration, low voltage stress and high stability. However, its noise characteristics still remain unknown. The purpose of this paper is to study quantitatively the noise characteristics of this simplified Forward-type resonant converter by experiment and analysis. The influence of parasitic elements and stored charge in rectifying diode on noise generation has been clarified.

• Journal of Power Electronics
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• 제15권2호
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• pp.389-398
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• 2015

This paper presents a 1.92 kW resonant converter for medium voltage applications that uses low voltage stress MOSFETs (500V) to achieve zero voltage switching (ZVS) turn-on. In the proposed converter, four MOSFETs are connected in series to limit the voltage stress of the power switches at half of the input voltage. In addition, three resonant circuits are adopted to share the load current and to reduce the current stress of the passive components. Furthermore, the transformer primary and secondary windings are connected in series to balance the output diode currents for medium power applications. Split capacitors are adopted in each resonant circuit to reduce the current stress of the resonant capacitors. Two balance capacitors are also used to automatically balance the input capacitor voltage in every switching cycle. Based on the circuit characteristics of the resonant converter, the MOSFETs are turned on under ZVS. If the switching frequency is less than the series resonant frequency, the rectifier diodes can be turned off under zero current switching (ZCS). Experimental results from a prototype with a 750-800 V input and a 48V/40A output are provided to verify the theoretical analysis and the effectiveness of the proposed converter.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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• pp.399-402
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• 2006

This paper presents a new circuit topology of dc bus line switch-assisted half-bridge soft switching PWM inverter type dc-dc converter for arc welder. The proposed power converter is composed of typical voltage source half-bridge high frequency PWM inverter with a high frequency transformer link in addition to dc bus line side power semiconductor switching devices fer PWM control scheme and capacitive lossless snubbers. All the active power switches in the half-bridge arm and dc bus lines can achieve ZCS turn-on and ZVS turn-off commutation operation and consequently the total turn-off switching losses can be significantly reduced. As a result, a high switching frequency of using IGBTs can be actually selected more than about 20 kHz. The effectiveness of this new converter topology is proved for low voltage and large current dc-dc power supplies such as arc welder from a practical point of view.

• 조명전기설비학회논문지
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• 제27권2호
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• pp.69-76
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• 2013

In this paper, electronic ballast using resonant inverter for HID lamp is designed and implemented. The proposed electronic ballast is used the soft switching technology ZVS(Zero Voltage Switching) to reduce turn-on and turn-off loss. The ignition of proposed electronic ballast is achieved by controlling a full bridge inverter which is consisted of LC filter for resonance. After ignition the ballast operates as a low frequency square wave inverter by controlling a full bridge inverter as a buck converter. After ignition at resonant frequency of $f_o$=160kHz, the switching frequency of a buck converter is consisted of 50kHz of high frequency and 170Hz of low frequency. This is for attenuating high frequency harmonics and avoiding acoustic resonance. The experimental results show that electronic ballast using resonant inverter is operated stably.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.